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    ATF10136 Price and Stock

    Agilent Technologies Inc ATF-10136-TR1

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    Bristol Electronics ATF-10136-TR1 1,848
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    Quest Components ATF-10136-TR1 1,478
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    ATF-10136-TR1 200
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    Agilent Technologies Inc ATF-10136

    TRANSISTOR,JFET,N-CHANNEL,SOT-173VAR
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    Quest Components ATF-10136 200
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    Hewlett Packard Co ATF-10136

    TRANSISTOR,JFET,N-CHANNEL,SOT-173VAR
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    Quest Components ATF-10136 3
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    Agilent Technologies Inc ATF10136TR1

    Electronic Component
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    ComSIT USA ATF10136TR1 1,347
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    Hewlett Packard Co ATF10136

    Electronic Component
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    ATF10136 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF10136 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10136-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10136-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10136-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10136-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF10136 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ATF-10136

    Abstract: gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		ATF-10136 ATF-10136 5965-8701E gaas fet micro-X Package ATF-10136-STR ATF-10136-TR1 36 Micro-X agilent atf10136 ATF 136 PDF

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100 PDF

    ATF-10136-TR1

    Abstract: ATF-10136 ATF-10136-STR 36 Micro-X
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: 0.5 dB Typical at 4 GHz The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		ATF-10136 ATF-10136 ATF-10136-TR1 ATF-10136-STR 36 Micro-X PDF

    Toko inductor 20211

    Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
    Text: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent


    Original     		ATF-21186 ATF-21186, 5962-6875E Toko inductor 20211 AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686 PDF

    7804 regulator

    Abstract: AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885
    Text: 4 GHz Television Receive Only LNB Design Application Note A007 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 AN-A001: AN-S005: 5091-8825E 7804 regulator AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885 PDF

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 PDF

    phemt biasing ATF-36077

    Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in


    Original     		ATF-36077 ATF36077 AN-G004, ATF-10136, ATF-13284, 5091-9311E 59643854E 5966-0782E phemt biasing ATF-36077 low noise design ATF 10136 microstripline ATF-10136 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band PDF

    atf-41435

    Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
    Text: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is


    Original     		5091-8823E 5968-3244E atf-41435 99250 schematic diagram receiver data circuit satellite ATF-10235 PDF

    S parameters for ATF 10136

    Abstract: ATF-10136 TSC7662 ATF10136 AN-A002 low noise design ATF 10136 Teledyne Semiconductor NE555
    Text: S-Band Low Noise Amplifier Using the ATF-10136 Application Note G004 ΓO Introduction This application note documents the results of using the ATF-10136 in low noise amplifier applications at S band. The ATF-10136 device is capable of a 0.5 dB noise figure at 2.3 GHz. The ATF-10136 is packaged


    Original     		ATF-10136 5091-9311E 5968-0733E S parameters for ATF 10136 TSC7662 ATF10136 AN-A002 low noise design ATF 10136 Teledyne Semiconductor NE555 PDF

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800 PDF

    ATF10236

    Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		ATF-10236 frequen058 5963-3780E 5966-0166E ATF10236 FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686 PDF

    ATF-13484

    Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
    Text: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		ATF-10236 ATF-10136, ATF-13736, ATF-13484 ATF-21186 ATF-36163 ATF-36163 ATF-36077 ATF-13484 atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue PDF

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870 PDF

    GHZ micro-X Package

    Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736 PDF

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136 PDF

    ATF-10736

    Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		ATF-10236 ATF-10736 AN-G005 ATF10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05 PDF

    ATF-13484

    Abstract: ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF-36163 ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		5091-8350E 5966-0779E 5965-1235E ATF-36163 5965-5956E ATF-36077 5966-0783E ATF-36077 ATF-13484 ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077 PDF

    S parameters for ATF 10136

    Abstract: AVANTEK transistor Avantek atf-1323
    Text: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


    OCR Scan     		ATF-10136 0D0kiS35 31O-371-0717or31O-371-8478 S parameters for ATF 10136 AVANTEK transistor Avantek atf-1323 PDF

    S parameters for ATF 10136

    Abstract: Hewlett-Packard MICRO-X ATF-10136 ATF10136-STR 8G75
    Text: E S I HEW LETT* WLEM PA C K A R D 0 .5 -1 2 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features Description • Low Noise Figure: The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    OCR Scan     		ATF-10136 ATF-10136 0l057 0l010) 408-G54-8G75 5965-8701E S parameters for ATF 10136 Hewlett-Packard MICRO-X ATF10136-STR 8G75 PDF

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61 PDF

    AN-G005

    Abstract: transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202
    Text: r m HEW LETT mL'/LM P A C K A R D Low N oise and M oderate P ow er A m plifiers U sin g th e ATF-21186 Application Note 1064 In tro d u c tio n This application note describes the use of a low cost Gallium Arsenide Field Effect T ransistor GaAs FET designed specifically


    OCR Scan     		ATF-21186 ATF-21186, device40 5962-6875E AN-G005 transistor 1248 Toko inductor 20211 transistor tt 2206 transistor w1a 94 transistor rf m 9860 ST 9343 transistor bd 9262 ef Toko 20211 LT 7202 PDF

    ATF1013

    Abstract: No abstract text available
    Text: What H E W L E T T * mLliMPACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 F e atu res D escription • Low N oise Figure: 0.5 dB Typical at 4 GHz The ATF-1013 6 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    OCR Scan     		ATF-10136 ATF-1013 ATF1013 PDF

    S parameters for ATF 10136

    Abstract: ATF-10136-TR2 ATF-10136 ATF10136
    Text: What mL' KM HEWLETT PA C K A R D ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • • • 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


    OCR Scan     		ATF-10136 S parameters for ATF 10136 ATF-10136-TR2 ATF10136 PDF

    AN-A002

    Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
    Text: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this


    OCR Scan     		TF-10136 ATF-10136 ATF-10136. ATF10136 5091-4863E AN-A002 AN-G002 testing amplifier circuit low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System PDF