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Infineon Technologies AG BFY193PZZZA1 RF TRANS NPN 12V 7.5GHZ MICRO X1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFY193PZZZA1	Box			1	1 $289.47 10 $249.206 100 $289.47 1000 $289.47 10000 $289.47	Buy Now
Infineon Technologies AG BFY193C(ES) Electronic Component
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ComSIT USA	BFY193C(ES)		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	BFY193C(ES)			26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFY196(P) Trans RF BJT NPN 12V 0.1A 4-Pin Micro-X1 Box (Alt: SP000011416)
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EBV Elektronik	BFY196(P)			26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFY196(ES) (Alt: BFY196(ES))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	BFY196(ES)			26 Weeks	20	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFY193CSAMZZZA1 Trans GP BJT NPN 12V 0.08A 4-Pin Micro-X1 (Alt: SP000418158)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	BFY193CSAMZZZA1			26 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

BFY19 Datasheets (35)

Part	Manufacturer	Description	Datasheet Type	PDF
BFY19	ITT Semiconductors	Semiconductor Summary 1969	Scan	PDF
BFY19	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BFY19	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BFY19	Unknown	Transistor Replacements	Scan	PDF
BFY19	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BFY19	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BFY19	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BFY19	STC	Early Transistors	Scan	PDF
BFY19	ZaeriX	Short Form Data Catalogue 1972-73	Short Form	PDF
BFY193	Infineon Technologies	BFY193	Original	PDF
BFY193	Siemens	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.)	Original	PDF
BFY193 (ES)	Infineon Technologies	HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V_CEO (max): 12.0 V; I_C(max): 80.0 mA; P_tot (max): 580.0 mW; f_T (typ): 8.0 GHz;	Original	PDF
BFY193ES	Infineon Technologies	HiRel NPN Silicon RF Transistor	Original	PDF
BFY193ES	Siemens	HiRel NPN silicon RF transistor	Original	PDF

BFY193H	Infineon Technologies	HiRel NPN Silicon RF Transistor	Original	PDF
BFY193H	Siemens	HiRel NPN silicon RF transistor	Original	PDF
BFY193 (P)	Infineon Technologies	HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V_CEO (max): 12.0 V; I_C(max): 80.0 mA; P_tot (max): 580.0 mW; f_T (typ): 8.0 GHz;	Original	PDF
BFY193P	Infineon Technologies	HiRel NPN Silicon RF Transistor	Original	PDF
BFY193(P)	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 80MA MICRO-X1	Original	PDF
BFY193P	Siemens	HiRel NPN silicon RF transistor	Original	PDF

BFY19 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 8 GHz F = 2.3 dB at 2 GHz	Original	PDF	BFY193
Untitled Abstract: No abstract text available Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 6,5 GHz F = 3 dB at 2 GHz	Original	PDF	BFY196
nec 500t Abstract: 2SC2999D 2SC2999E 2sc922 2SC185 JE9016 MPS6539 JE9018 2SC1303 BF369 Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO . 5 10 15 2N2884 2SC320 2SC922 2SC922 g~~~: 25 30 BF154 BF369 2SC269 BFY19 2SC302 2SC302 2SCl779 2SCl779 ~~g~~g~ 35 40 2SC2999C 2SC2999D 2SC2999E SE5052 BF209 MPS6539 BF206 TIS56 ~~;l37 45 50 2N5236	Original	PDF	2SC1303 CIL194A BCY57 MPS6568 MPSH02 MPS6568A SE5020 SE5021 nec 500t 2SC2999D 2SC2999E 2sc922 2SC185 JE9016 MPS6539 JE9018 BF369
BFY196 Abstract: No abstract text available Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 6,5 GHz F = 3 dB at 2 GHz • esa Space Qualification Expected 1998	Original	PDF	BFY196 BFY196
microwave transistor bfy193 Abstract: No abstract text available Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 8 GHz F = 2.3 dB at 2 GHz 4	Original	PDF	BFY193 BFY193 Q62702F1610 QS9000 microwave transistor bfy193
BFY193 Abstract: No abstract text available Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified	Original	PDF	BFY193 BFY193
Untitled Abstract: No abstract text available Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 6,5 GHz F = 3 dB at 2 GHz	Original	PDF	BFY196 BFY196
BFY196 Abstract: No abstract text available Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 6,5 GHz F = 3 dB at 2 GHz • Space Qualification Expected 1998	Original	PDF	BFY196 Q62702F1684 QS9000 BFY196
Microwave PIN diode Abstract: 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation Text: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: family given in bracketts • CGY40: (CGY41), Side 2 • CFY66: (CFY67), Side 3 • BXY42: (BXY43, BXY44), Side 4 - 5 • BFY193: (BFY180, BFY280,	Original	PDF	CGY40: CGY41) CFY66: CFY67) BXY42: BXY43, BXY44) BFY193: BFY180, BFY280, Microwave PIN diode 50kRad BFY196 S microwave fet IC CGY40 krad microwave transistor bfy193 t359 BFY193 ic radiation
microwave transistor bfy193 Abstract: BFY193 Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • Space Qualified	Original	PDF	BFY193 Q62702F1610 QS9000 microwave transistor bfy193 BFY193
BFY193 Abstract: No abstract text available Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 8 GHz F = 2.3 dB at 2 GHz	Original	PDF	BFY193 BFY193
Untitled Abstract: No abstract text available Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 6,5 GHz F = 3 dB at 2 GHz 4	Original	PDF	BFY196 BFY196 Q62702F1684 QS9000
BFY193C Abstract: No abstract text available Text: BFY193C HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Specified 1/f Noise  Hermetically sealed microwave package   4 3 1 2	Original	PDF	BFY193C BFY193C
AMP PBT connector 7 way Abstract: EN3155 Cross Reference en3155 m39029 BOEING bacc63 D38999 series I II MS27615-KXXBXX MS27295 MS24254-16P aecma en3155 L-2119-E Text: Amphenol 2010 Amphenol 12-C3 Circular Interconnects Products for Military, Aerospace and Harsh Environments Circular Interconnects • Aluminum • Stainless Steel/Firewall • Composite • Printed Circuit Board Connectors • High Speed Connectors • EMI Filter/Transient	Original	PDF	12-C3 KV/150 12-R1. LM-300 AMP PBT connector 7 way EN3155 Cross Reference en3155 m39029 BOEING bacc63 D38999 series I II MS27615-KXXBXX MS27295 MS24254-16P aecma en3155 L-2119-E

A03 transistor Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz	Original	PDF	Q62702F1610 Q62702F1701 BFY193 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A03 transistor Q62702F-1610 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
siemens spc 2 Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67 Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are	Original	PDF	de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
Q62702F1609 Abstract: No abstract text available Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz	Original	PDF	BFY183 BFY183 Q62702F1609 Q62702F1713 QS9000
EN3155 Cross Reference Abstract: en3155 m39029 D38999 series I II BACC47 en3155 crimping tools MS24264EXXTXX draka fileca cable ABS1503 en3155 017 aecma NF26Q100 Text: Amphenol 2010 Amphenol 12-C3 Circular Interconnects Products for Military, Aerospace and Harsh Environments Circular Interconnects • Aluminum • Stainless Steel/Firewall • Composite • Printed Circuit Board Connectors • High Speed Connectors • EMI Filter/Transient	Original	PDF	12-C3 LM-300* 12-R1. LM-300 EN3155 Cross Reference en3155 m39029 D38999 series I II BACC47 en3155 crimping tools MS24264EXXTXX draka fileca cable ABS1503 en3155 017 aecma NF26Q100
microwave transistor bfy193 Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420 Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG	Original	PDF	MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
GaAs Amplifier Micro-X Marking k Abstract: LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k" Text: HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 2 2 3 3 3 3.1 3.2 3.3 Quality Specifications of HiRel Components	Original	PDF	HPAC140 MWP-25 MWP-35 GaAs Amplifier Micro-X Marking k LNA ku-band Silicon Bipolar Transistor MICRO-X CLY30 CLY27 microwave fet IC gaas fet micro-X Package gaas fet micro-X Package marking SIEMENS MICROWAVE RADIO 8 GHz GaAs Amplifier Micro-X "Marking k"
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	PDF	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
2n7588 Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149 Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.	OCR Scan	PDF
MSC 5010 Abstract: Microwave Semiconductors MIL883 leak Text: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and	OCR Scan	PDF
GET114 Abstract: GET872 BSY29 NKT404 GET882 V30/30P BSY28 NKT-404 BSY27 BFY18 Text: T ra n s is to rs Continued Type 1> (21 (3 (4> (5> Pto t: M inimum value Average value Max. unilateralized power gain Max. frequency o f oscillation W ith heat sink Max. total dissipation in free air at 25°C ambient temp. Max. collector-to-ba«« voltage, em itter	OCR Scan	PDF	BFY17 600mW 245mc BFY18 300mW BFY19 300m25mA 100mA MPS6534 GET114 GET872 BSY29 NKT404 GET882 V30/30P BSY28 NKT-404 BSY27

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Infineon Technologies AG BFY193PZZZA1

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BFY19 Datasheets (35)

BFY19 Datasheets Context Search

Untitled

Untitled

nec 500t

BFY196

microwave transistor bfy193

BFY193

Untitled

BFY196

Microwave PIN diode

microwave transistor bfy193

BFY193

Untitled

BFY193C

AMP PBT connector 7 way

A03 transistor

siemens spc 2

Q62702F1609

EN3155 Cross Reference

microwave transistor bfy193

GaAs Amplifier Micro-X Marking k

AL102 ATES

2n7588

MSC 5010

GET114