darlington Vce-200V
Abstract: circuit of samsung CRT bu806 equivalent C 3311 transistor samsung crt BU806..807 BU407 BU407H BU806 BU807
Text: SAM S U NG SEMICONDUCTOR INC BU407/407H IME D | 7*11,4145 0 0 0 7 1 ,8 5 S | NPN EPITAXIAL SILICON TRANSISTOR T-33-11 HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Ta=25°C Characterlstlp Collector-Base Voltage
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BU407/407H
-65M50
T-33-11
O-220
darlington Vce-200V
circuit of samsung CRT
bu806 equivalent
C 3311 transistor
samsung crt
BU806..807
BU407
BU407H
BU806
BU807
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sgsf 465 equivalent
Abstract: BU 508D equivalent 2sd transistors equivalent SGSF465 sgsf 344 equivalent transistors 2sd 2500 bu 1577 bu508 SGSIF 444 SGSF 465
Text: SCS-THOMSON CONSUMER RÎ90 l^©IIQJ£©in^©RODO^ TV, MONITORS AND VCR CIRCUITS DEFLECTION • TRANSISTORS TO 220 ISOWATT 220 ISOWATT 218 TO 3 Internal schematic diagrams c HIGH DEFINITION COLOUR MONITORS HORIZONTAL DEFLECTION These NPN transistors feature very fast switching times typically 3 to 5 times faster than 1500 V products designed
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SGSF324
SGSF425
2SD1455
2ST3460
2ST2000
ISOWATT218
BU508A
BU208A
sgsf 465 equivalent
BU 508D equivalent
2sd transistors equivalent
SGSF465
sgsf 344 equivalent
transistors 2sd 2500
bu 1577
bu508
SGSIF 444
SGSF 465
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BU208
Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
Text: M OTOROLA SC X ST R S/R F MOTOROLA BU207 BU208 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTORS 1300 AND 1500 VOLTS HORIZONTAL DEFLECTION TRANSISTOR . . . specifically designed for use in large screen color deflection
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BU207
BU208
BU208
14-MAXIMUM
POT CORE 4229P-L00
transistor bu208
4229PL00-3C8
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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TEA2164 equivalent
Abstract: TEA7605SP BU 508D equivalent tda4601 equivalent sgsf465 bu 208 equivalent TEA7605SP equivalent sgsf 465 equivalent BU 508D TEA7685SP
Text: SCS-THOMSON CONSUMER RÎ90 l^©IIQJ£©in^©RODO^ TV, MONITORS AND VCR CIRCUITS DEFLECTION • TRANSISTORS TO 220 ISOWATT 220 ISOWATT 218 TO 3 Internal schematic diagrams c HIGH DEFINITION COLOUR MONITORS HORIZONTAL DEFLECTION These NPN transistors feature very fast switching times typically 3 to 5 times faster than 1500 V products designed
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SGSF324
SGSF425
M5450B7
M5451B7
M5480B7
M5481B7
M5482B7
M5486B7
A4092
outputs/15mA
TEA2164 equivalent
TEA7605SP
BU 508D equivalent
tda4601 equivalent
sgsf465
bu 208 equivalent
TEA7605SP equivalent
sgsf 465 equivalent
BU 508D
TEA7685SP
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2SJ56
Abstract: 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90QP BUZ90I BUZ90IP z901 BUZ90S 2SJ568
Text: Magnatec Engineering Distribution M agnatec - lateral M O S F E T s for the audio m arket M ag n a tec , a co m p an y w ith in th e S e m e la b G ro u p , in tro d u c e s a ran g e o f c o m p le m e n ta ry lateral M O S F E T pow er transistors. Supplied in a range of outlines, the 8/16Amp,
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8/16Amp,
160/200Voit
BUZ900D
BUZ90QP
BUZ90I
Z901/906
2SJ162
2SJ56
2X2SJ56
USPI6N20
2SJ56
2SJ50 equivalent
2SJ56 equivalent
2SKI76
BUZ90I
BUZ90IP
z901
BUZ90S
2SJ568
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sgsf444
Abstract: SGSF445 SGSF465 BU 508D equivalent sgsf 465 equivalent SGSF463 BU 508D SGSF341 BUF 664 buf 450 diode
Text: SCS-THOMSON CONSUMER RÎ90 l^©IIQJ£©in^©RODO^ TV, MONITORS AND VCR CIRCUITS DEFLECTION • TRANSISTORS TO 220 ISOWATT 220 ISOWATT 218 TO 3 Internal schematic diagrams c HIGH DEFINITION COLOUR MONITORS HORIZONTAL DEFLECTION These NPN transistors feature very fast switching times typically 3 to 5 times faster than 1500 V products designed
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SGSF324
SGSF425
SGSF664
SGSF665
SGSF663
SGSF661
sgsf444
SGSF445
SGSF465
BU 508D equivalent
sgsf 465 equivalent
SGSF463
BU 508D
SGSF341
BUF 664
buf 450 diode
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pkm4304b
Abstract: PKM4304
Text: QPI-21 14A Active EMI Filter SIP for 48 Vdc Bus Description: The QPI‐21 active EMI filter attenuates conducted common‐ mode CM and differential‐mode (DM) noise over the CISPR22 frequency range of 150 kHz to 30 MHz. The product
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QPI21
CISPR22
QPI21
EN55022
pkm4304b
PKM4304
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PKM4304
Abstract: QPI-21LZ QPI21LZ pkm4304b QPI21LZ01
Text: QPI-21 14A Active EMI Filter SiP for 48 Vdc Bus Description: The QPI‐21 active EMI filter attenuates conducted common‐ mode CM and differential‐mode (DM) noise over the
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QPI21
CISPR22
PKM4304
QPI-21LZ
QPI21LZ
pkm4304b
QPI21LZ01
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DP142
Abstract: p139d E2p 49 transistor Transistor z3p tbh 12-38 transistor BJ 102 131 E2p 98 transistor ND1220 pj 75 sx 34
Text: € E I " C l l b O P S X F a m ily D a ta S h e e t D escription Features • SR A M -based , In -system Program m able • Sw itch M atrix - N on-Blocking - Program m able Bus W idths of 4 ,8 ,1 6 and 32 bits - Id entical and Predictable D elays - O ne-to-O ne, O n e-to-M an y and M any-toO n e C onnections
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2328-C
DP142
p139d
E2p 49 transistor
Transistor z3p
tbh 12-38
transistor BJ 102 131
E2p 98 transistor
ND1220
pj 75 sx 34
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74HC245DW
Abstract: M74HC245P
Text: MITSUBISHI HIGH SPEED CMOS M 74H C 245P/FP /D W P O C TAL 3-STATE NONINVERTING BUS TR A N S C E IV ER DESCRIPTION The M 74H C 245 is a sem iconductor integrated circuit con PIN CONFIGURATION TOP VIEW sisting of eigh t tra nsceivers w ith noninverted outputs.
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245P/FP
74LS-STATE
74HC245DW
M74HC245P
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Untitled
Abstract: No abstract text available
Text: PulseGuard Suppressors Surface Mount Polymeric ESD Suppressors PGB2 Series Halogen Free / Lead-Free Description PulseGuard ESD Suppressors help protect sensitive electronic equipment against electrostatic discharge ESD . They use polymer composite materials to suppress fastrising ESD transients (as specified in IEC 61000-4-2), while
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150pf
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Untitled
Abstract: No abstract text available
Text: PulseGuard Suppressors Surface Mount Polymeric ESD Suppressors PGB2 Series Halogen Free / Lead-Free Description PulseGuard ESD Suppressors help protect sensitive electronic equipment against electrostatic discharge ESD . They use polymer composite materials to suppress fastrising ESD transients (as specified in IEC 61000-4-2), while
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PGB2010402
Abstract: PE7025-30 PulseGuard PGB2010402KRHF pgb2
Text: PulseGuard Suppressors Surface Mount Polymeric ESD Suppressors PGB2 Series Halogen Free / Lead-Free Description PulseGuard ESD Suppressors help protect sensitive electronic equipment against electrostatic discharge ESD . They use polymer composite materials to suppress fastrising ESD transients (as specified in IEC 61000-4-2), while
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DAT TDA3616 Multiple voltage regulator with battery detection Product specification Supersedes data of 2000 Jan 14 File under Integrated Circuits, IC01 2001 Feb 02 Philips Semiconductors Product specification Multiple voltage regulator with battery
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TDA3616
TDA3616
753503/03/pp20
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MGL931
Abstract: SOT110 microprocessor data handbook TDA3616T
Text: INTEGRATED CIRCUITS DATA SHEET TDA3616 Multiple voltage regulator with battery detection Product specification Supersedes data of 2000 Jan 14 File under Integrated Circuits, IC01 2001 Feb 02 Philips Semiconductors Product specification Multiple voltage regulator with battery
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TDA3616
TDA3616
753503/03/pp20
MGL931
SOT110
microprocessor data handbook
TDA3616T
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philips capacitor 1000uf 25V
Abstract: TDA3616T IC Reset 3-pin regulator 0-12 v SOT110 SO20 TDA3616 TDA3616SF
Text: INTEGRATED CIRCUITS DATA SHEET TDA3616 Multiple voltage regulator with battery detection Objective specification Supersedes data of 1998 Jul 22 File under Integrated Circuits, IC01 2000 Jan 14 Philips Semiconductors Objective specification Multiple voltage regulator with battery
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TDA3616
TDA3616
545002/25/02/pp20
philips capacitor 1000uf 25V
TDA3616T
IC Reset 3-pin
regulator 0-12 v
SOT110
SO20
TDA3616SF
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DSI624
Abstract: No abstract text available
Text: DS1624 Digital Thermometer and Memory FEATURES • Temperature measurements require no external components ■ Measures temperatures from -55°C to +125°C in 0.03125°C increments. Fahrenheit equivalent is -67°F to +257°F in 0.05625°F increments ■ Temperature is read as a 13-bit value two
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DS1624
13-bit
DSI624
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PGB2010402
Abstract: PE7025-30 PGB2010402KRHF pgb2
Text: PulseGuard Suppressors Surface Mount Polymeric ESD Suppressors PGB2 Series Halogen Free / Lead-Free Description PulseGuard ESD Suppressors help protect sensitive electronic equipment against electrostatic discharge ESD . They use polymer composite materials to suppress fastrising ESD transients (as specified in IEC 61000-4-2), while
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178mm)
PE7025-30
PGB2010402
PE7025-30
PGB2010402KRHF
pgb2
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NEC-V850
Abstract: DesignWare SPI vhdl code for watchdog timer of ATM ARM dual port SRAM compiler vhdl coding for analog to digital converter LogicVision verilog for SRAM 512k word 16bit uart verilog lvds synopsys on-chip modeling
Text: GS30 0.15-µm CMOS Standard Cell/Gate Array Version 1.0 February, 2001 Copyright Texas Instruments Incorporated, 2001 The information and/or drawings set forth in this document and all rights in and to inventions disclosed herein and patents which might be granted thereon disclosing or employing the
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SRST145
NEC-V850
DesignWare SPI
vhdl code for watchdog timer of ATM
ARM dual port SRAM compiler
vhdl coding for analog to digital converter
LogicVision
verilog for SRAM 512k word 16bit
uart verilog lvds
synopsys on-chip modeling
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pic 123
Abstract: PCMCIA SRAM Card HMS30C7110 PQ208 A19N
Text: HMS30C7110 Multipurpose Network Processor ARM Based 32-Bit Microprocessor Datasheet Version 1.5 MagnaChip Semiconductor Ltd. HMS30C7110 Copyright. 2002 Magnachip Semiconductor Inc. ALL RIGHTS RESERVED. No part of this publication may be copied in any form, by photocopy, microfilm, retrieval
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HMS30C7110
32-Bit
tRH100
tRD100
pic 123
PCMCIA SRAM Card
HMS30C7110
PQ208
A19N
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GRM188B11A
Abstract: GRM188B grm188b11 BU28TD3 200mA-0mA BU33TD3WG BUxxTD3WG series 3pin marking 2j
Text: CMOS LDO Regulators for Portable Devices 1ch 200mA CMOS LDO Regulators BU••TD3WG Series No.11020EAT11 ●Description BUTD3WG series is high-performance FULL CMOS regulator with 200-mA output, which is mounted on versatile package SSOP5 2.9 mm 2.8 mm 1.25 mm . It has excellent noise characteristics and load responsiveness
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200mA
11020EAT11
200-mA
R1120A
GRM188B11A
GRM188B
grm188b11
BU28TD3
200mA-0mA
BU33TD3WG
BUxxTD3WG series
3pin marking 2j
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Untitled
Abstract: No abstract text available
Text: BU21TD3WG CMOS LDO Regulators for Portable Devices 1ch 200mA CMOS LDO Regulators BU••TD3WG Series No.11020EAT11 ●Description BUTD3WG series is high-performance FULL CMOS regulator with 200-mA output, which is mounted on versatile package SSOP5 2.9 mm 2.8 mm 1.25 mm . It has excellent noise characteristics and load responsiveness
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BU21TD3WG
200mA
11020EAT11
200-mA
R1120A
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BU28TD3WG
Abstract: DIODE MARK G7
Text: BU28TD3WG CMOS LDO Regulators for Portable Devices 1ch 200mA CMOS LDO Regulators BU••TD3WG Series No.11020EAT11 ●Description BUTD3WG series is high-performance FULL CMOS regulator with 200-mA output, which is mounted on versatile package SSOP5 2.9 mm 2.8 mm 1.25 mm . It has excellent noise characteristics and load responsiveness
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BU28TD3WG
200mA
11020EAT11
200-mA
R1120A
BU28TD3WG
DIODE MARK G7
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