BUK9621-30
Abstract: PHP50N03LT PHP50N03T Diode zener smd SOt404
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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OT404
BUK9621-30
BUK9621-30
PHP50N03LT
PHP50N03T
Diode zener smd SOt404
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PHB37N06T
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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OT404
PHB37N06T
PHB37N06T
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PHB80N06T
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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OT404
PHB80N06T
PHB80N06T
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BUK9120-48TC
Abstract: SOT426
Text: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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BUK9120-48TC
OT426
BUK9120-48TC
SOT426
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BUK9518-30
Abstract: BUK9618-30
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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OT404
BUK9618-30
BUK9518-30
BUK9618-30
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PHP50N06T
Abstract: A80L
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
PHP50N06T
PHP50N06T
A80L
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PHB24N03LT
Abstract: PHP24N03LT PHP24N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP24N03LT, PHB24N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP24N03LT,
PHB24N03LT
PHP24N03LT
-ID/100
PHB24N03LT
PHP24N03T
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BUK9524-55
Abstract: BUK959
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9524-55
BUK9524-55
BUK959
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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OT404
BUK7624-55
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transistor irfz44n
Abstract: irfz44n for irfz44n pin of IRFZ44N IRFZ44N equivalent of irfz44n datasheet of irfz44n
Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
IRFZ44N
transistor irfz44n
irfz44n
for irfz44n
pin of IRFZ44N
IRFZ44N equivalent
of irfz44n
datasheet of irfz44n
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BUK9535-55
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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O220AB
BUK9535-55
BUK9535-55
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BUK7575-55
Abstract: buk7575
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
BUK7575-55
BUK7575-55
buk7575
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PHP44N06LT
Abstract: PHB44N06LT PHD44N06LT
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP44N06LT, PHB44N06LT, PHD44N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP44N06LT,
PHB44N06LT,
PHD44N06LT
PHP44N06LT
PHB44N06LT
PHD44N06LT
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PHB60N06LT
Abstract: PHP60N06LT
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP60N06LT, PHB60N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP60N06LT,
PHB60N06LT
PHP60N06LT
PHB60N06LT
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PHB42N03LT
Abstract: PHP42N03LT PHP45N03LT PHP50N03LT
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP42N03LT, PHB42N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP42N03LT,
PHB42N03LT
PHP42N03LT
PHB42N03LT
PHP45N03LT
PHP50N03LT
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PHB45N03LT
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHB45N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHB45N03LT
PHB45N03LT
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TSP 817
Abstract: BUK9830-30 PHT6N03LT
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHT6N03LT TrenchMOS transistor Logic level FET Product specification Supersedes data of September 1997 File under Discrete Semiconductors, SC13a November 1997 Philips Semiconductors Product specification TrenchMOS transistor
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PHT6N03LT
SC13a
OT223
SCA56
137087/600/02/pp11
TSP 817
BUK9830-30
PHT6N03LT
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PHB80N06LT
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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OT404
PHB80N06LT
PHB80N06LT
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TRANSISTOR SMD MARKING CODE RG
Abstract: TRANSISTOR SMD CODE 6.8 BUK9
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9614-55
OT404
BUK9614-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\081.
\BUK9614-55
TRANSISTOR SMD MARKING CODE RG
TRANSISTOR SMD CODE 6.8
BUK9
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification TrenchMOS transistor Logic level FET FEATURES PHP87N03LT, PHB87N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP87N03LT,
PHB87N03LT
PHP87N03LT
O220AB)
-ID/100
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP42N03LT, PHB42N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP42N03LT,
PHB42N03LT
PHP42N03LT
O220AB)
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phd45n03
Abstract: PHD45N03LT PHD45N03L phd45n03lta
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP45N03LT, PHB45N03LT, PHD45N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP45N03LT,
PHB45N03LT,
PHD45N03LT
PHP45N03LTy
phd45n03
PHD45N03LT
PHD45N03L
phd45n03lta
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transistor 50 MHz
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHN1015 SYMBOL • ’Trench’ technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHN1015
PHN1015
transistor 50 MHz
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PHD45N03LT
Abstract: TRANSISTOR SMD MARKING CODE 3x PHP45N03LT transistor smd code marking nc g smd transistor marking 54
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP45N03LT, PHB45N03LT, PHD45N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP45N03LT,
PHB45N03LT,
PHD45N03LT
PHP45N03LTking
PHD45N03LT
PHP45N03LT
TRANSISTOR SMD MARKING CODE 3x
transistor smd code marking nc g
smd transistor marking 54
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