d 42030 transistor
Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A
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Original
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BUT11/11A
O-220
BUT11
BUT11A
BUT11
AN-758:
AN-758
d 42030 transistor
AN-7505
220v ac to 48v dc smps
AN3008 Fairchild
crt horizontal deflection circuit
AN-7528
9019 transistor
FAN6800
BUT11A spice
AN817
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PDF
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BUT-11
Abstract: BUT11A CIRCUIT BUT11 BUT11/11A BUT11A
Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A
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Original
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BUT11/11A
O-220
BUT11
BUT11A
BUT-11
BUT11A CIRCUIT
BUT11
BUT11/11A
BUT11A
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PDF
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BUT11A1
Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage
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Original
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BUT11/11A
O-220
BUT11
BUT11A
BUT11A1
BUT-11
BUT11A CIRCUIT
BUT11
BUT11A
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PDF
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BUT11
Abstract: BUT-11
Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage
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Original
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BUT11/11A
O-220
BUT11
BUT11A
BUT11
BUT-11
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PDF
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BUT11
Abstract: transistor but11
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃
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Original
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BUT11
BUT11
transistor but11
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PDF
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BUT-11
Abstract: BUT11A BUT11 BUT11 equivalent BUT11A CIRCUIT BUT11A Switching regulators
Text: SavantIC Semiconductor Product Specification BUT11 BUT11A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION
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Original
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BUT11
BUT11A
O-220C
BUT11
BUT-11
BUT11A
BUT11 equivalent
BUT11A CIRCUIT
BUT11A Switching regulators
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PDF
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but11 transistor application notes
Abstract: BUT11 BUT11A
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors
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Original
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BUT11;
BUT11A
O-220AB
MBB008
MBK106
O-220AB)
SCA55
137067/00/01/pp11
but11 transistor application notes
BUT11
BUT11A
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PDF
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but11
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors
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Original
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BUT11;
BUT11A
O-220AB
MBB008
MBK106
O-220AB)
SCA55
137067/00/01/pp11
but11
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PDF
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BUT11A
Abstract: BUT11 But11a data MGB913 MGE252 BUT-11
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors
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Original
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BUT11;
BUT11A
O-220AB
MBB008
MBK106
O-220AB)
O-220
BUT11A
BUT11
But11a data
MGB913
MGE252
BUT-11
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PDF
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by205
Abstract: BUT11 BY205-400 2N2222 2N2904 D44H11 D45H11 transistor d44h11
Text: BUT11 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current MAY 1989 - REVISED MARCH 1997 TO-220 PACKAGE TOP VIEW
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Original
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BUT11
O-220
by205
BUT11
BY205-400
2N2222
2N2904
D44H11
D45H11
transistor d44h11
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PDF
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by205
Abstract: BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11
Text: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA
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Original
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BUT11
O-220
SAP791AB
by205
BY205-400
diode by205
2n2222 transistor pin b c e
by205 diode
BUT11
D44H11
2N2222
2N2904
D45H11
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PDF
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BY205
Abstract: BY205-400 BUT11 2N2222 2N2904 D44H11 D45H11
Text: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA
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Original
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BUT11
O-220
BY205
BY205-400
BUT11
2N2222
2N2904
D44H11
D45H11
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PDF
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but11
Abstract: BUT-11 BUT11A NPN Transistor VCEO 1000V transistor VCE 1000V to220 BUT11 equivalent BUT11 transistor BUT11/11A transistor VCEO 1000V transistor VCE 1000V
Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 850 V 1000 V 400 V 450 V VEBO 9 V Collector Current DC IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC)
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Original
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BUT11/11A
O-220
BUT11
BUT11A
25ollector
but11
BUT-11
BUT11A
NPN Transistor VCEO 1000V
transistor VCE 1000V to220
BUT11 equivalent
BUT11 transistor
BUT11/11A
transistor VCEO 1000V
transistor VCE 1000V
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PDF
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BUT-11
Abstract: BUT11 but11a
Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS 7 0 -2 2 0 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage : BUT11 VcES Symbol V V Collector Emitter Voltage : BUT11A : BUT11 850 1000 V ceo 400 V
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OCR Scan
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BUT11/11A
BUT11
BUT11A
BUT-11
BUT11
but11a
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PDF
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BUT11A CIRCUIT
Abstract: BUT11
Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Rating Unit 850 V 1000 V 400 V VcES : BUT11 Collector Emitter Voltage Emitter Base Voltage : B UT11A : BUT11
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OCR Scan
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BUT11/11A
BUT11
UT11A
BUT11
BUT11A
BUT11A CIRCUIT
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PDF
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BUT11
Abstract: 250VLC NPN Transistor VCEO 1000V
Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BUT11 : B U T 11A Collector Emitter Voltage : BUT11 : B U T 11A Emitter B ase Voltage Collector Current DC
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OCR Scan
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BUT11/11A
BUT11
O-220
BUT11
250VLC
NPN Transistor VCEO 1000V
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PDF
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BUT11 equivalent
Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS
Text: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec
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OCR Scan
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flb55
BUT11
BUT11/A
BUT11FI/AFI
O-220
ISOWATT220
BUT11/FI
BUT11A/AFI
ISOWATT-220
BUT11 equivalent
transistor t220
BUT-11
ph but11a
BUT11A APPLICATION
11AFI
but11fi
7929
BUT11 SGS
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PDF
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but11a
Abstract: but 11 BUT-11 transistor but 11a BUT11
Text: Product specification Philips Semiconductors BUT11; BUT11A Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-22QAB package. APPLICATIONS • Converters • Inverters • Switching regulators
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OCR Scan
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O-22QAB
BUT11;
BUT11A
BUT11
BUT11A
but 11
BUT-11
transistor but 11a
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PDF
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BUT11A CIRCUIT
Abstract: But11a data but11a BUT-11 BUT11
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators
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OCR Scan
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O-220AB
BUT11;
BUT11A
O-22QAB)
BUT11
BUT11A
BUT11A CIRCUIT
But11a data
BUT-11
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PDF
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BUT11F1
Abstract: 5T35 BUT11 UT11 BUT-11 Equivalent but11
Text: WM SGS-THOMSON 7# B UT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH jESCRIPTION ne BUT11/A and BUT11FI/AF! are silicon miitiepiaxial mesa NPN transistors respectively in Jedec 0-220 plastic package and 1SOWATT220 fully isosted package, particularly intended for switching
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OCR Scan
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BUT11A/AFI
BUT11/A
BUT11FI/AF!
iSOWATT220
BUT11/FI
BUT11A/AFI
O-220
SOWATT220
500ms
BUT11F1
5T35
BUT11
UT11
BUT-11
Equivalent but11
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PDF
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BUT11A1
Abstract: BUT11A BUT11 0077B BUT-11 But11a data
Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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OCR Scan
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BUT11;
BUT11A
T0-220
BUT11
TQ-220AB.
711002b
0G77bÃ
BUT11A1
BUT11A
0077B
BUT-11
But11a data
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PDF
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BUT11
Abstract: BUT11/BUT11APX equivalent but11 equivalent BUT-11 BUt11a
Text: SGS-THOMSON RfflDOI^OlilLiOTr^ORaDOi BUT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH DESCRIPTIO N The BUT 11 /A and BUT 11FI/AFI are silicon miltiepitaxiai mesa NPN transistors respectively in Jedec T0-220 plastic package and ISOWATT220 fully iso lated package, particularly intended for switching
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OCR Scan
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BUT11/FI
BUT11A/AFI
11FI/AFI
T0-220
ISOWATT220
BUT11
500ms
BUT11/BUT11APX equivalent
but11 equivalent
BUT-11
BUt11a
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PDF
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BUT13P
Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20
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OCR Scan
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GG004S4
BUS13
15min
BUS13A
BUS14A
BUS50
20min
BUS51
BUT13P
BLN20
BUT14
SOT93
BUV62
BUV24
BUV41
but72
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J> BUT11 BUT11A _ y v _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.
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OCR Scan
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bbS3T31
BUT11
BUT11A
O-220
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PDF
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