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    BUT11 TRANSISTOR Search Results

    BUT11 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BUT11 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    d 42030 transistor

    Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A


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    BUT11/11A O-220 BUT11 BUT11A BUT11 AN-758: AN-758 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817 PDF

    BUT-11

    Abstract: BUT11A CIRCUIT BUT11 BUT11/11A BUT11A
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A


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    BUT11/11A O-220 BUT11 BUT11A BUT-11 BUT11A CIRCUIT BUT11 BUT11/11A BUT11A PDF

    BUT11A1

    Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage


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    BUT11/11A O-220 BUT11 BUT11A BUT11A1 BUT-11 BUT11A CIRCUIT BUT11 BUT11A PDF

    BUT11

    Abstract: BUT-11
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage


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    BUT11/11A O-220 BUT11 BUT11A BUT11 BUT-11 PDF

    BUT11

    Abstract: transistor but11
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃


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    BUT11 BUT11 transistor but11 PDF

    BUT-11

    Abstract: BUT11A BUT11 BUT11 equivalent BUT11A CIRCUIT BUT11A Switching regulators
    Text: SavantIC Semiconductor Product Specification BUT11 BUT11A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION


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    BUT11 BUT11A O-220C BUT11 BUT-11 BUT11A BUT11 equivalent BUT11A CIRCUIT BUT11A Switching regulators PDF

    but11 transistor application notes

    Abstract: BUT11 BUT11A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors


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    BUT11; BUT11A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 but11 transistor application notes BUT11 BUT11A PDF

    but11

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors


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    BUT11; BUT11A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 but11 PDF

    BUT11A

    Abstract: BUT11 But11a data MGB913 MGE252 BUT-11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors


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    BUT11; BUT11A O-220AB MBB008 MBK106 O-220AB) O-220 BUT11A BUT11 But11a data MGB913 MGE252 BUT-11 PDF

    by205

    Abstract: BUT11 BY205-400 2N2222 2N2904 D44H11 D45H11 transistor d44h11
    Text: BUT11 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current MAY 1989 - REVISED MARCH 1997 TO-220 PACKAGE TOP VIEW


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    BUT11 O-220 by205 BUT11 BY205-400 2N2222 2N2904 D44H11 D45H11 transistor d44h11 PDF

    by205

    Abstract: BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11
    Text: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA


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    BUT11 O-220 SAP791AB by205 BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11 PDF

    BY205

    Abstract: BY205-400 BUT11 2N2222 2N2904 D44H11 D45H11
    Text: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA


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    BUT11 O-220 BY205 BY205-400 BUT11 2N2222 2N2904 D44H11 D45H11 PDF

    but11

    Abstract: BUT-11 BUT11A NPN Transistor VCEO 1000V transistor VCE 1000V to220 BUT11 equivalent BUT11 transistor BUT11/11A transistor VCEO 1000V transistor VCE 1000V
    Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 850 V 1000 V 400 V 450 V VEBO 9 V Collector Current DC IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC)


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    BUT11/11A O-220 BUT11 BUT11A 25ollector but11 BUT-11 BUT11A NPN Transistor VCEO 1000V transistor VCE 1000V to220 BUT11 equivalent BUT11 transistor BUT11/11A transistor VCEO 1000V transistor VCE 1000V PDF

    BUT-11

    Abstract: BUT11 but11a
    Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS 7 0 -2 2 0 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector Base Voltage : BUT11 VcES Symbol V V Collector Emitter Voltage : BUT11A : BUT11 850 1000 V ceo 400 V


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    BUT11/11A BUT11 BUT11A BUT-11 BUT11 but11a PDF

    BUT11A CIRCUIT

    Abstract: BUT11
    Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Rating Unit 850 V 1000 V 400 V VcES : BUT11 Collector Emitter Voltage Emitter Base Voltage : B UT11A : BUT11


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    BUT11/11A BUT11 UT11A BUT11 BUT11A BUT11A CIRCUIT PDF

    BUT11

    Abstract: 250VLC NPN Transistor VCEO 1000V
    Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BUT11 : B U T 11A Collector Emitter Voltage : BUT11 : B U T 11A Emitter B ase Voltage Collector Current DC


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    BUT11/11A BUT11 O-220 BUT11 250VLC NPN Transistor VCEO 1000V PDF

    BUT11 equivalent

    Abstract: transistor t220 but11 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS
    Text: • ? CLSC}B3J 0Q£flb55 0 ■ S C S -T H O M S O N []*[RK»i gïïl(Q M(gS S_G S - T H O M S O N "p3VI?> BUT11 FI B U T 1 1A /A F I _ 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepitaxial mesa NPN transistors respectively in Jedec


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    flb55 BUT11 BUT11/A BUT11FI/AFI O-220 ISOWATT220 BUT11/FI BUT11A/AFI ISOWATT-220 BUT11 equivalent transistor t220 BUT-11 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11 SGS PDF

    but11a

    Abstract: but 11 BUT-11 transistor but 11a BUT11
    Text: Product specification Philips Semiconductors BUT11; BUT11A Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-22QAB package. APPLICATIONS • Converters • Inverters • Switching regulators


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    O-22QAB BUT11; BUT11A BUT11 BUT11A but 11 BUT-11 transistor but 11a PDF

    BUT11A CIRCUIT

    Abstract: But11a data but11a BUT-11 BUT11
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators


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    O-220AB BUT11; BUT11A O-22QAB) BUT11 BUT11A BUT11A CIRCUIT But11a data BUT-11 PDF

    BUT11F1

    Abstract: 5T35 BUT11 UT11 BUT-11 Equivalent but11
    Text: WM SGS-THOMSON 7# B UT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH jESCRIPTION ne BUT11/A and BUT11FI/AF! are silicon miitiepiaxial mesa NPN transistors respectively in Jedec 0-220 plastic package and 1SOWATT220 fully isosted package, particularly intended for switching


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    BUT11A/AFI BUT11/A BUT11FI/AF! iSOWATT220 BUT11/FI BUT11A/AFI O-220 SOWATT220 500ms BUT11F1 5T35 BUT11 UT11 BUT-11 Equivalent but11 PDF

    BUT11A1

    Abstract: BUT11A BUT11 0077B BUT-11 But11a data
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


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    BUT11; BUT11A T0-220 BUT11 TQ-220AB. 711002b 0G77bà BUT11A1 BUT11A 0077B BUT-11 But11a data PDF

    BUT11

    Abstract: BUT11/BUT11APX equivalent but11 equivalent BUT-11 BUt11a
    Text: SGS-THOMSON RfflDOI^OlilLiOTr^ORaDOi BUT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH DESCRIPTIO N The BUT 11 /A and BUT 11FI/AFI are silicon miltiepitaxiai mesa NPN transistors respectively in Jedec T0-220 plastic package and ISOWATT220 fully iso­ lated package, particularly intended for switching


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    BUT11/FI BUT11A/AFI 11FI/AFI T0-220 ISOWATT220 BUT11 500ms BUT11/BUT11APX equivalent but11 equivalent BUT-11 BUt11a PDF

    BUT13P

    Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
    Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20


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    GG004S4 BUS13 15min BUS13A BUS14A BUS50 20min BUS51 BUT13P BLN20 BUT14 SOT93 BUV62 BUV24 BUV41 but72 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J> BUT11 BUT11A _ y v _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.


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    bbS3T31 BUT11 BUT11A O-220 PDF