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    C-BAND INTERNALLY MATCHED FET Search Results

    C-BAND INTERNALLY MATCHED FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    HFA3135IHZ96 Renesas Electronics Corporation Ultra High Frequency Matched Pair Transistors Visit Renesas Electronics Corporation
    F0448NBGK Renesas Electronics Corporation Dual Matched Broadband RF DVGA Visit Renesas Electronics Corporation

    C-BAND INTERNALLY MATCHED FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ELM7785-7PS

    Abstract: ELM7785-7PST ELM7785 FET MARKING Device Innovations
    Text: ELM7785-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=9.5dB (Typ.) High PAE: ηadd=33% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-7PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-7PS ELM7785-7PS ELM7785-7PST ELM7785 FET MARKING Device Innovations PDF

    Eudyna TAPE

    Abstract: washing powder
    Text: ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: add=36% (Typ.) Frequency Band: 6.4~7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-4PS ELM6472-4PS Eudyna TAPE washing powder PDF

    C-Band Power marking E

    Abstract: No abstract text available
    Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: add=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-4PS ELM5964-4PS C-Band Power marking E PDF

    SUMITOMO 1085

    Abstract: ELM7785-4PS SUMITOMO 1710
    Text: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-4PS ELM7785-4PS SUMITOMO 1085 SUMITOMO 1710 PDF

    FET MARKING

    Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
    Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-4PS ELM5964-4PS FET MARKING ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4 PDF

    elm7179

    Abstract: ELM7179-4PS sumit
    Text: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-4PS ELM7179-4PS elm7179 sumit PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: add=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-4PS ELM7785-4PS PDF

    ELM7179-4PS

    Abstract: FET MARKING
    Text: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: add=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-4PS ELM7179-4PS FET MARKING PDF

    sumitomo 6600

    Abstract: ELM6472-4PS
    Text: ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Frequency Band: 6.4~7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-4PS ELM6472-4PS sumitomo 6600 PDF

    ELM7179-7PS

    Abstract: fet a 1412 FET MARKING SUMITOMO 1033
    Text: ELM7179-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-7PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-7PS ELM7179-7PS fet a 1412 FET MARKING SUMITOMO 1033 PDF

    MGFC47B3436

    Abstract: MGFC47B
    Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC47B3436 MGFC47B3436B 37dBm 10ohm MGFC47B3436 MGFC47B PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: hadd=35% (Typ.) Broad Band: 7.1 to 7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7179-4PS ELM7179-4PS PDF

    Untitled

    Abstract: No abstract text available
    Text: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		MGFC42V7177 MGFC42V7177 PDF

    MGFC47B3538B

    Abstract: MGFC47B
    Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		MGFC47B3538B MGFC47B3538B 37dBm GF-60 MGFC47B PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC45B3436B MGFC45B3436B -45dBc 12ohm PDF

    Untitled

    Abstract: No abstract text available
    Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		MGFC47B3538B MGFC47B3538B 37dBm GF-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-7PS ELM5964-7PS PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: hadd=36% (Typ.) Frequency Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-4PS ELM6472-4PS PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM6472-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 6.4 to 7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-7PS is a power GaAs FET that is internally matched for


    Original     		ELM6472-7PS ELM6472-7PS PDF

    ELM5964-7PS

    Abstract: JESD22-A114 C-Band Power marking E ELM7179-7PS
    Text: ELM5964-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: ηadd=36% (Typ.) Broad Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-7PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-7PS ELM5964-7PS JESD22-A114 C-Band Power marking E ELM7179-7PS PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC45B3436B MGFC45B3436B -45dBc 12ohm PDF

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC47B3436 MGFC47B3436B 37dBm 10ohm PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: hadd=34% (Typ.) Broad Band: 7.7 to 8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for


    Original     		ELM7785-4PS ELM7785-4PS PDF

    Untitled

    Abstract: No abstract text available
    Text: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=37% (Typ.) Frequency Band: 5.9 to 6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for


    Original     		ELM5964-4PS ELM5964-4PS PDF