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    Vishay Dale RCC120615R0FKEA

    RCC1206 100 15R 1% ET1 E3
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    DigiKey RCC120615R0FKEA Digi-Reel 63,149 1
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    RCC120615R0FKEA Cut Tape 63,149 1
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    RCC120615R0FKEA Reel 55,000 5,000
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    Vishay Dale RCC120610M0FKEA

    RCC1206 100 10M 1% ET1 E3
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    Vishay Dale RCC120610R0JNEA

    RCC1206 200 10R 5% ET1 E3
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    DigiKey RCC120610R0JNEA Digi-Reel 19,680 1
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    RCC120610R0JNEA Cut Tape 19,680 1
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    RCC120610R0JNEA Reel 15,000 5,000
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    Vishay Dale RCC1206150RFKEA

    RCC1206 100 150R 1% ET1 E3
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    DigiKey RCC1206150RFKEA Cut Tape 19,068 1
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    RCC1206150RFKEA Reel 10,000 5,000
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    Vishay Dale RCC120610K0JNEA

    RCC1206 200 10K 5% ET1 E3
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    DigiKey RCC120610K0JNEA Cut Tape 13,569 1
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    RCC120610K0JNEA Digi-Reel 13,569 1
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    RCC120610K0JNEA Reel 5,000 5,000
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    C12061 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


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    AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157 PDF

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


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    AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW PDF

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    AGR09090EF Hz--960 DS03-202RFPP mosfet 1412 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP) PDF

    AGR21045EF

    Abstract: AGR21045XF JESD22-C101A
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


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    AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A PDF

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A PDF

    140-A525-SMD

    Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa
    Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor


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    AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa PDF

    Untitled

    Abstract: No abstract text available
    Text: AP8800A COST EFFECTIVE 28V BUCK 1-W LED DRIVER Description Pin Assignments The AP8800A is a step-down DC/DC converter designed to drive Top View LEDs with a constant current. The device can drive up to 7 LEDs, depending on the forward voltage of the LEDs, in series from a


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    AP8800A AP8800A 600kHz. DS35100 PDF

    1w led driver

    Abstract: SR732ATTDR NMC0805X7R104K50TRPF SBR1A40 12V 1W LED DRIVER SR732A NMC1206X7R105K50F MMBT3904 TSOT23-5 LED Driver 1W
    Text: AP8800A COST EFFECTIVE 28V BUCK 1-W LED DRIVER Description Pin Assignments Top View SW 1 GND 2 CTRL 3 Maximum output current of AP8800A is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a


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    AP8800A AP8800A TSOT23-5 370mA DS35100 1w led driver SR732ATTDR NMC0805X7R104K50TRPF SBR1A40 12V 1W LED DRIVER SR732A NMC1206X7R105K50F MMBT3904 TSOT23-5 LED Driver 1W PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    SBR2U30P1

    Abstract: No abstract text available
    Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments The AL8806 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a


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    AL8806 AL8806 DS35144 SBR2U30P1 PDF

    AL 8805

    Abstract: led driver 8805 AL8805 SMD CODE PACKAGE SOT25 B140 B240 DFLS240L marking b240 diode
    Text: AL8805 HIGH EFFICIENCY 30V 1A BUCK LED DRIVER Description Pin Assignments The AL8805 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a voltage source of 6V to 30V. Series connection of the


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    AL8805 AL8805 DS35030 AL 8805 led driver 8805 SMD CODE PACKAGE SOT25 B140 B240 DFLS240L marking b240 diode PDF

    AGR21030EF

    Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
    Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


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    AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A PDF

    "RF Power Transistor"

    Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


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    AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557 PDF

    J964

    Abstract: AGR21045EF AGR21045XF JESD22-C101A
    Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


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    AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A PDF

    Untitled

    Abstract: No abstract text available
    Text: AL8805 HIGH EFFICIENCY 30V 1A BUCK LED DRIVER Description Pin Assignments The AL8805 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a voltage source of 6V to 30V. Series connection of the


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    AL8805 AL8805 DS35030 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP8800A COST EFFECTIVE 28V BUCK 1-W LED DRIVER Pin Assignments Description Top View SW 1 GND 2 CTRL 3 Maximum output current of AP8800A is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a


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    AP8800A AP8800A TSOT23-5 370mA DS35100 PDF

    UHF/Antenna

    Abstract: C120-6-1 U244 SATCOM SE109 SATCOM antenna DM 59 C-120 tripod C120
    Text: SATCOM ANTENNA DM SE109 SERIES PORTABLE UHF ANTENNA SYSTEM The DM SE109-1 portable UHF Satcom antenna system is the latest innovation in high gain, lightweight portable manpack antennas from a proven manufacturer. The DM SE109-1 combines the high reliability and maximum portability of


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    SE109 SE109-1 C120-6-1 U244-1-1 C120-6-1 U244-1-1 UHF/Antenna U244 SATCOM SATCOM antenna DM 59 C-120 tripod C120 PDF

    C20 CT

    Abstract: 100B220 sprague CT series
    Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series PDF

    Untitled

    Abstract: No abstract text available
    Text: AL8808EV2 EVALUATION BOARD USER GUIDE DESCRIPTION The AL8808EV2 is an evaluation board showing the application of the Diodes Incorporated AL8808 LED driver device on a board suitable for use in an MR16 LED lamp. The board has four main connections: two power inputs P1 and P2, and two LED connections Anode A and Cathode (K). The


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    AL8808EV2 AL8808 680mA 12VAC 680mA, A1103-04, D-81541 PDF

    12v transformer

    Abstract: 0R089 capacitor 470uf 25v diode 51X 25ZLH470M NPIS64 AL8806MP8-13 capacitor 470uF SBR2U30P1
    Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a


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    AL8806 AL8806 DS35144 12v transformer 0R089 capacitor 470uf 25v diode 51X 25ZLH470M NPIS64 AL8806MP8-13 capacitor 470uF SBR2U30P1 PDF

    ELECTRONIC TRANSFORMER FOR A 12V HALOGEN LAMP

    Abstract: 25ZLH470M
    Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a


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    AL8806 AL8806 DS35144 ELECTRONIC TRANSFORMER FOR A 12V HALOGEN LAMP 25ZLH470M PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan
    PDF

    MC145145-1

    Abstract: 200185 18 320184 MC145145P1
    Text: M OT OR O L A SC M M LOGIC O T O T-5CH7 R O 14E D | t3fc.?2SE Q 0 ñ 2 S b G . ci | L A M C 1 4 5 1 4 5 -1 Advance Information HIGH-PERFORMANCE CMOS 4 - B I T D A T A B U S IN P U T P L L F R E Q U E N C Y S Y N T H E S IZ E R Th e MC145145-1 is programmed by a 4-bit input, w ith strobe and ad­


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    MC145145-1 12-bit 14-bit b3b72S2 200185 18 320184 MC145145P1 PDF