4-28UNF
Abstract: No abstract text available
Text: CASE FINISH SOLDER CURRENT AMPS 0 .3 WORKING VOLTAGE -55 *C TD +85*C AC -55'C TD +125'C DC AC DC 50 MAXIMUM VOLTAGE DROP MAXIMUM DC RESISTANCE (OHMS) 28 DC 2.3 AC MIN, INSERTION LOSS PER MIL-STD-220 MINIMUM FULL LOAD. +25*C CAPACITANCE14 30 75 1 0 0 150 300 500 1
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MIL-STD-220
CAPACITANCE14
1/4-28UNF-2A
4-28UNF
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Untitled
Abstract: No abstract text available
Text: CASE FINISH WORKING VOLTAGE CURRENT AMPS SO LD ER 1 -55 *C TD +85*C AC 24012400Hz DC 350 AC DC 240Ê400Hz MAXIMUM VOLTAGE DROP MAXIMUM DC RESISTANCE (OHMS) -55'C TD +125'C 300 0 ,60 DC AC MIN, INSERTION LOSS PER MIL-STD-220 MINIMUM FULL LOAD. +25*C CAPACITANCE14
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24012400Hz
400Hz
MIL-STD-220
CAPACITANCE14
-5/16-24UNF-2A
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Untitled
Abstract: No abstract text available
Text: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser
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IS28F002BV/BLV
16-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
IS28F002BLVT-120TI
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th 2167
Abstract: 2167 memory
Text: inteT 2167 HIGH SPEED 16,384 x 1 BIT STATIC RAM 2167-55 2167-70 2167L-70 2167-10 55 70 70 100 125 125 90 90 40 40 30 30 Max. Access Time ns Max. Active Current (mA) Max. Standby Current (mA) 0.8-2.0V Output Timing Reference Levels 2141/2147 Upgrade Double Poly HMOS II Technology
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2167L-70
20-Pin
384-bit
th 2167
2167 memory
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DN25D
Abstract: pt100 sensors SENSYM AD7707 AD7707BR AD7707BRU AD780 EVAL-AD7707EB RU-20
Text: a 3 V/5 V, ؎10 V Input Range, 1 mW 3-Channel 16-Bit, Sigma-Delta ADC AD7707 FEATURES Charge Balancing ADC 16 Bits No Missing Codes 0.003% Nonlinearity High Level ؎10 V and Low Level (؎10 mV) Input Channels True Bipolar ؎100 mV Capability on Low Level Input
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16-Bit,
AD7707
20-Lead
AD7707
RU-20)
DN25D
pt100 sensors
SENSYM
AD7707BR
AD7707BRU
AD780
EVAL-AD7707EB
RU-20
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1001d
Abstract: No abstract text available
Text: CYPRESS PRELIMINARY C Y 7 C 95 4D X ATM HOTLink Transceiver Features technology, functionality, and integration over the field proven CY7B923/933 HOTLink. Second generation HOTLink technology UTOPIA level I and II compatible host bus interface Three-bit Multi-phy address capability built-in
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CY7B923/933
8B/10B
50-to-200
0G3G35Ã
709b0
1001d
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Untitled
Abstract: No abstract text available
Text: Ether Module -EM2C 10Base-2 Technology, Incorporated Ethernet Transceiver Module with on Board Isolation Transformer & DC/DC Converter A p ril 1994 Introduction The Thin N e t C heapernet m odule p ro vid e s a com plete L o c a l A re a N e tw o rk in terfa ce fo ra station, w itho u t a tra n s
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10Base-2
10Base-2
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Untitled
Abstract: No abstract text available
Text: 83C92A SEEQ Ethernet Transceiver T echnology, Incorporated April 1994 Introduction The 83C92A is an Ethernet and Thin Net Cheapernet Transceiver that provides a complete Local Area Network interface for a station, with or without a transceiver cable, see Figure 1.
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83C92A
DP8392A
DP8392B.
MD400136/-
83C92A
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Untitled
Abstract: No abstract text available
Text: SEEQ 8 3 C 9 2 A Ethernet Transceiver Technology Incorporated April 23, 1996 Introduction The 83C92A is an Ethernet and Thin Net Cheapemet Transceiver that provides a complete Local Area Network interface for a station, with o r without a transceiver cable,
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83C92A
ANSI/IEEE802
DP8392A
DP8392B.
80C04A
MD400136/A
83C92A
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Untitled
Abstract: No abstract text available
Text: fax id: 1047 C Y 7 C 1 0 9 C Y 7 C 1 0 0 9 w / C Y P R E S S 128K x 8 Static RAM Features active HIG H chip enable C E 2 , an active LO W o u tp u t enable (OE), and th re e -sta te drivers. W riting to the device is acco m plished by takin g chip enable one (CE-|) and w rite enable (WE)
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ad7712
Abstract: AD7712AN AD7712AQ AD7712AR AD7712AR-REEL7 AD7712SQ
Text: LC2MOS Signal Conditioning ADC AD7712* FEATURES Charge Balancing ADC 24 Bits No Missing Codes ؎0.0015% Nonlinearity High Level and Low Level Analog Input Channels Programmable Gain for Both Inputs Gains from 1 to 128 Differential Input for Low Level Channel
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AD7712*
AD7712
ADSP-2105
68HC11
AD7712AN
AD7712AQ
AD7712AR
AD7712AR-REEL7
AD7712SQ
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Intel 2147H
Abstract: intel 2147 2147 intel 2147H 2147H-1 2147H-2 2147H-3 2147HL 2147HL-3
Text: in te i 2147H HIGH SPEED 4096 x 1 BIT STATIC RAM 2147H-2 2147H-3 2147HL-3 2147H 35 45 55 55 70 70 Max. Active Current mA 180 180 180 125 160 140 Max. Standby Current (mA) 30 30 30 15 20 10 2147H-1 Max. Access Time (ns) Pinout, Function, and Power Com patible to Industry Standard 2147
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2147H
2147H-1
2147H-2
2147H-3
2147HL-3
2147H
2147HL
18-Pin
405-te-bit
Intel 2147H
intel 2147
2147 intel
2147HL
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P80A49H
Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.
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RMX/80,
P80A49H
8035HL
F1L 250 V fuse
BPK-70
interfacing 8275 crt controller with 8086
i8282
hall marking code A04
Transistor AF 138
DK55
82720 intel
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7C172
Abstract: No abstract text available
Text: CY7C171 CY7C172 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • A u tom atic pow er-dow n w hen d esele cted T h e C Y 7C 171 and C Y 7C 1 7 2 are high-per form an ce C M O S static R A M s organ ized as 4096 by 4 bits w ith sep arate I/O . E asy
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CY7C171
CY7C172
38-00036-E
7C172
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ue09
Abstract: CY7B180-12GC cd 2313 UE 09
Text: CY7B180 CY7B181 AD VAN C ED IN F O R M A T IO N CYPRESS SEMICONDUCTOR 4K x 18 Cache Tag Features Functional Description • 4K x 18 tag organization T h e CY7B180 and CY7B181 are high-perform ance B iCM O S cache tag R A M s orga nized as 40% words by 18 bits. Each word
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CY7B180
CY7B181
12-ns
15-ns
7B180)
7B181)
ue09
CY7B180-12GC
cd 2313
UE 09
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PDF
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K74 PACKAGE DIAGRAM
Abstract: IR 10e 1h
Text: = ^~' _ = p r e l im in a r y . ^ SEMICONDUCTOR Features • CY10E494 CY100E494 CY101E494 16,384 x 4 bits organization • Ultra high speed/standard power — tAA = 7 ns — I f E — 180 mA 16,384 x 4 ECL Static RAM • Open emitter output for ease of
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10KH/10K-
100K-compatible
CY10E494
CY100E494
CY101E494
CY101E494
10E494-7VC
CY10E494-7K
10E494-7DC
10E494-8V
K74 PACKAGE DIAGRAM
IR 10e 1h
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80C51
Abstract: 83C552 87C552 GQCC1-J68 timer highspeed a81s ABA12
Text: Philips Semiconductors Military Microcontroller Products Product specification Single-chip 8-bit EPROM microcontroller with 10-bit A/D, capture compare timer, high-speed outputs, PWM CFEATURES 87C552 PIN CONFIGURATION • 80C51 central processing unit • 8k x 8 EPROM expandable externally to 64k bytes
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10-bit
87C552
80C51
16-bit
po1992
711DfiÂ
83C552
GQCC1-J68
timer highspeed
a81s
ABA12
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F-3102L
Abstract: kemet cap mica symposium
Text: The Battle for Maximum Volumetric Efficiency - Part 1: When Technologies Compete, Customers Win Randy Hahn, Mike Randall and Jonathan Paulsen KEMET Electronics Corp PO Box 5928 Greenville, SC 29606 Tel: +1 864-963-6300 Fax: +1 864-228-4333 randyhahn@kemet.com
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la 76805 volt on pin
Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Text: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4
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MCS-4/40â
MCS-48â
MCS-80/85â
-883B
la 76805 volt on pin
intel 8708 eprom
M3002
Pulse M3001
eprom 8708
2316a rom
UPP-103
interfacing 8275 crt controller with 8086
intel 1402a
Pascall
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Untitled
Abstract: No abstract text available
Text: CY7B326 PRELIMINARY CYPRESS SEMICONDUCTOR Multipurpose BiCMOS PLD Features Functional Description • 16 I/O macrocells, each having: — Program m able com binatorial syn chronous and asynchronous modes — Registers configurable to T-type and D-type — Array feedback from I/O pin or
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CY7B326
CY7B326
24-pin,
300-mil
28-pin,
B326-11
CY7B326-12PC
CY7B326-12JC
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PDF
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Untitled
Abstract: No abstract text available
Text: IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V o r 5V Read Operation • High-Performance Read Maximum Access Tim es — 5V: 60/80/120 ns
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IS28F200BV/BLV
44-pin
48-pin
IS28F200BVB-80TI
IS28F200BVT-80TI
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ad7705 bridge
Abstract: 540-6601 AD7705 AD7706 AD780 REF192 ad7705 68hc11 rtd pt100 interface to 8051 AD7705BR-REEL
Text: 3 V/5 V, 1 mW, 2-/3-Channel, 16-Bit, Sigma-Delta ADCs AD7705/AD7706 Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use.
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16-Bit,
AD7705/AD7706
ot6otntnt20407ot
320320239t
56040862305nty
AD7705BN
AD7705BR
AD7705BR-REEL
ad7705 bridge
540-6601
AD7705
AD7706
AD780
REF192
ad7705 68hc11
rtd pt100 interface to 8051
AD7705BR-REEL
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PDF
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7B164-15
Abstract: 910U
Text: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel
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CY7B164
CY7B166
7B166)
7B166
8-A-00015-A
7B164-15
910U
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PDF
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2191F
Abstract: No abstract text available
Text: _CY7C170A = ? SEMICONDUCTOR = 4096 x 4 Static R/W RAM Features Functional Description • CM OS for optim um speed/power T he CY7C170A is a high-performance CMOS static RAM organized as 4096 words by 4 bits. Easy memory expansion is
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CY7C170A
CY7C170A
38-00096-B
2191F
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