3000w power amplifier circuit diagram
Abstract: power amplifier 3000w diagram power amplifier 3000w circuit diagram 3000w power amplifier Circuit 3000w power amp 3000w amplifier SA03 3000w mosfet circuit
Text: 16-4&8*%5 .0%6-"5*0/".1-*'*&3 SA03 M I C R O T E C H N O L O G Y )551888"1&9.*$305&$)$0. "1&9 FEATURES • WIDE SUPPLY RANGE—16-100V • 30A CONTINUOUS TO 60°C case • 3 PROTECTION CIRCUITS • ANALOG OR DIGITAL INPUTS
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RANGE--16-100V
12-pin
45kHz
SA03U
3000w power amplifier circuit diagram
power amplifier 3000w diagram
power amplifier 3000w circuit diagram
3000w power amplifier Circuit
3000w power amp
3000w amplifier
SA03
3000w mosfet circuit
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5304 pwm
Abstract: No abstract text available
Text: 16-4&8*%5 .0%6-"5*0/".1-*'*&34 SA12 M I C R O T E C H N O L O G Y )551888"1&9.*$305&$)$0. "1&9 FEATURE • HIGH FREQUENCY SWITCHING — 200 kHz • WIDE SUPPLY RANGE—16-200V • 15A CONTINUOUS TO 65°C case • 3 PROTECTION CIRCUITS
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RANGE--16-200V
12-pin
400kHz
SA12U
5304 pwm
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Untitled
Abstract: No abstract text available
Text: 16-4&8*%5 .0%6-"5*0/".1-*'*&34 SA12 M I C R O T E C H N O L O G Y )551888"1&9.*$305&$)$0. "1&9 FEATURE • HIGH FREQUENCY SWITCHING — 200 kHz • WIDE SUPPLY RANGE—16-200V • 15A CONTINUOUS TO 65°C case • 3 PROTECTION CIRCUITS
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6-200V
12-pin
400kHz
5980beNORTH
SA12U
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Alc201A
Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
Text: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
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852GME
Alc201A
HY-05 HYCOM
diode DB3 C531
ALC201
SmD TRANSISTOR a75
smd diode c539
P62-1D3-1AX9
smd diode c644
RJ45 speedtech
EPSON C691 MAIN
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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Untitled
Abstract: No abstract text available
Text: APT10086SVR A dvanced po w er Te c h n o l o g y 1000V 13A 0.860Í2 POWER MOS V‘ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10086SVR
APT10086SVR
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13n10
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS
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IXFT10N100
IXFT12N100
IXFT13N100
10N100
12N100
13N100
13n10
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Untitled
Abstract: No abstract text available
Text: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions
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IXFT10N100
IXFT12N100
13N100
10N100
12N100
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AS1210
Abstract: No abstract text available
Text: • K A dvanced W7Æ P o w er Tec h n o lo g y APT8065SVR soov i3a o.65oq POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8065SVR
AS1210
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IXYS DS 145
Abstract: 13N100
Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS
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IXFT10N100
IXFT12N100
13N100
10N100
12N100
13N100
IXYS DS 145
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cd 551 mosfet
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE FS1AS-18A ¿ • Vdss . 9 0 0 V • rDS ON (MAX) • f e . 1 5 . 0 Í 2
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FS1AS-18A
cd 551 mosfet
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26N500
Abstract: DIXYS
Text: n ï Y V Q wnm 1 A . X u Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q DS on Q C la ss = 500 V = 26 A = 0.20 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQg, High dv/dt Symbol TestConditions Maximum Ratings
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26N50Q
26N50Q
O-268
26N500
DIXYS
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Untitled
Abstract: No abstract text available
Text: A P T 1001R S V R A dvanced W 7Æ P o w e r Te c h n o lo g y 1000v 11 a i.oooq POWER MOS V Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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1001R
1000v
APT1001
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vm200
Abstract: No abstract text available
Text: IRF654A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss a 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 iM M ax. @ VDS = 250V
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IRF654A
vm200
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13n50
Abstract: IXYS DS 145 MAX1352
Text: gixYS HiPerFET Power MOSFETs IXFJ 13N50 VDSS = 500 V iD cont = 13 A \ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Test Conditions VDSS Tj =25°Cto150°C 500 V VDGR T j = 25° C to 150° C; RQS= 1 M£2 500 V Vos v GSM Continuous ±20
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13N50
Cto150
T0-220
C1-111
IXYS DS 145
MAX1352
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IXYS DS 145 12A
Abstract: IXYS DS 145 LTS 543
Text: nixYs HiPerFET Power MOSFETs Q Class IXFH 12N100Q IX F T 12N100Q DSS D25 P DS on = 1000 V 12 A = 1.05 Q trr < 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings
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O-247
12N100Q
12N100Q
to150
IXYS DS 145 12A
IXYS DS 145
LTS 543
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings
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IXFH/IXFT/IXFX14N100
IXFH/IXFT/IXFX15N100
14N100
15N100
O-247
to150
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Untitled
Abstract: No abstract text available
Text: International iMiRectifier P D - 9 .1 3 3 9 IRF520N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 1 0 0 V ^ D S o n = Id =
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IRF520N
5S452
D023411
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60N60
Abstract: No abstract text available
Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous
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60N60
60N60
O-247
O-268
O-264
1999IXYS
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KM10T
Abstract: No abstract text available
Text: HiPerFAST IGBT Lightspeed™ Series V CES IXGH 32N60C IXGT 32N60C ^C25 V CE sat typ ^ fity p 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings T j = 25°C to 150°C 600 V Tj = 25° C to 150° C; RQE = 1 MQ 600 V Continuous
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32N60C
32N60C
O-247
KM10T
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TO-264 Jedec package outline
Abstract: No abstract text available
Text: nixYS ADVANCEDTECHNICAL INFORMATION High Speed IGBT with Diode IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 V CES 600 V 55 A ^C25 V CE sat tfi Short Circuit SOA Capability 2.0 V 140 ns TO-247AD (IXSH) Symbol Test Conditions vCES T j =25°C to150°C VcOR T j = 25° C to 150° C; RGE=
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IXSH30N60BD1
IXSK30N60BD1
IXST30N60BD1
O-247AD
to150
O-264
O-268
TO-264 Jedec package outline
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c 4977 transistor
Abstract: transistor on 4977 mosfet 452 JSs 97 diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip
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MTV20N50E
c 4977 transistor
transistor on 4977
mosfet 452
JSs 97 diode
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TDA7260
Abstract: capacitor 470nf25v TDA7232 18 zr TDA 2011 TDA7268 100KA SGSP321 TDA7268 S
Text: rZ 7 A 7# S G S -T H O M S O N g HIGH EFFICIENCY AUDIO PWM DRIVER • ■ ■ . ■ ■ HIGH EFFICIENCY P0 = 30 W W ITH POWER MOS BRIDGE LOW DISTORTION SINGLE SUPPLY OPERATION MUTING FACILITY TH ERM AL AND SHO RT-CIRCUIT PROTEC TION ■ DUMP PROTECTION D E S C R IP T IO N
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TDA7260
TDA7260
s-9656
capacitor 470nf25v
TDA7232
18 zr
TDA 2011
TDA7268
100KA
SGSP321
TDA7268 S
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4424 ym
Abstract: MIC4423AJBQ MIC4424CN
Text: IEH e L MIC4423/4424/4425 Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of
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MIC4423/4424/4425
500mA
1800pF
4423X
MIC4424XWM
MIC4425XWM
16-lead
4424 ym
MIC4423AJBQ
MIC4424CN
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