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    CLASS-C MOSFET Search Results

    CLASS-C MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    CLASS-C MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MSK101

    Abstract: MSK101B deflection Bridge
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH POWER DUAL OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 101 315 701-6751 FEATURES: Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V Low Quiescent Current : ± 8.0 mA Total Typ. In Class "C" Mode


    Original     		ISO-9001 MIL-PRF-38534 MSK101 MSK101B Military-Mil-PRF-38534 MSK101 MSK101B deflection Bridge PDF

    schematics for a PA amplifier class c

    Abstract: MSK153 MSK153B AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH POWER OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 153 315 701-6751 FEATURES: MIL-PRF-38534 QUALIFIED Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V Low Quiescent Current :± 4.0 mA Typ. In Class "C"


    Original     		ISO-9001 MIL-PRF-38534 MSK153 MSK153B Military-Mil-PRF-38534 schematics for a PA amplifier class c MSK153 MSK153B AUDIO MOSFET POWER AMPLIFIER SCHEMATIC PDF

    ATC100B470JT500XT

    Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P9210N MRF8P9210NR3 ATC100B470JT500XT ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P9210N MRF8P9210NR3 PDF

    4325-DS-01

    Abstract: ISO 18000-6D
    Text: EM MICROELECTRONIC - MARIN SA EM4325 18000-6 Type C Gen2 and Type C/D (Gen2/TOTAL) RFID IC Description EM4325 is a Class-3 Generation-2 (Gen2) IC that is compliant with ISO/IEC 18000-6:2010 Type C and Type D TM (TOTAL) as well as EPC Class-1 Generation-2. The chip


    Original     		EM4325 EM4325 4325-DS-01 24-Apr-13 420005-A01, ISO 18000-6D PDF

    ISO 18000-6D

    Abstract: EM4325 18000-6D antenna application note matching RFID loop antenna 8045N UHF RFID loop antenna design MOSFET blf power rf 80bit Transponder rtc tamper detection sensors
    Text: EM MICROELECTRONIC - MARIN SA EM4325 18000-6 Type C Gen2 and Type C/D (Gen2/TOTAL) RFID IC Description Features EM4325 is a Class-3 Generation-2 (Gen2) IC that is compliant with ISO/IEC 18000-6:2010 Type C and Type D TM (TOTAL) as well as EPC Class-1 Generation-2. The chip


    Original     		EM4325 4325-DS-01 14-Sep-12 420005-A01, ISO 18000-6D 18000-6D antenna application note matching RFID loop antenna 8045N UHF RFID loop antenna design MOSFET blf power rf 80bit Transponder rtc tamper detection sensors PDF

    ISO 18000-6D

    Abstract: No abstract text available
    Text: EM MICROELECTRONIC - MARIN SA EM4325 18000-6 Type C Gen2 and Type C/D (Gen2/TOTAL) RFID IC Description Features EM4325 is a Class-3 Generation-2 (Gen2) IC that is compliant with ISO/IEC 18000-6:2010 Type C and Type D TM (TOTAL) as well as EPC Class-1 Generation-2. The chip


    Original     		EM4325 EM4325 4325-DS-01 24-Apr-13 420005-A01, ISO 18000-6D PDF

    MRF8P182

    Abstract: ATC600F0R1BT250XT atc600f150jt250xt
    Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		MRF8P18265H MRF8P18mployees, MRF8P18265HR6 MRF8P18265HSR6 MRF8P18265H MRF8P182 ATC600F0R1BT250XT atc600f150jt250xt PDF

    ATC600F0R1BT250XT

    Abstract: No abstract text available
    Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 ATC600F0R1BT250XT PDF

    MRF8P9040N

    Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		MRF8P9040N 728-9subsidiaries, MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 MRF8P9040N MPZ2012S300AT000 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT J583 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 2, 2/2014 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S7170N MRF8S7170NR3 2/2014Semiconductor, PDF

    J014

    Abstract: BLM21PG300SN1D
    Text: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S8260H MRF8S8260HR3 MRF8S8260HSR3 MRF8S8260H J014 BLM21PG300SN1D PDF

    MRF8P20140WHS

    Abstract: mrf8p20140 J473 MRF8P20140W
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W PDF

    mosfet j172

    Abstract: J263 MRF8S9200N MRF8S9200NR3 MOSFET Transistors IRL AN1955 mosfet j133 J133 mosfet transistor J181 ATC100B1R2BT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9200N MRF8S9200NR3 mosfet j172 J263 MRF8S9200N MRF8S9200NR3 MOSFET Transistors IRL AN1955 mosfet j133 J133 mosfet transistor J181 ATC100B1R2BT PDF

    D1880

    Abstract: AN1955 41* RF tuner
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P18265H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical


    Original     		MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 D1880 AN1955 41* RF tuner PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S7235N MRF8S7235NR3 PDF

    mosfet j172

    Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20161HS MRF8P20161HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9102N MRF8S9102NR3 PDF

    MRF8P20140WH/HS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS PDF

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B PDF

    mosfet J442

    Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20161HS MRF8P20161HSR3 mosfet J442 ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 PDF