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    COMPLEMENTARY DARLINGTON CURRENT AMPLIFIER Search Results

    COMPLEMENTARY DARLINGTON CURRENT AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
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    COMPLEMENTARY DARLINGTON CURRENT AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
    Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.


    Original     		MJ11015, MJ11015 MJ11016 pin diagram of ic 4066 ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors PDF

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
    Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,


    Original     		MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: BD777 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors designed for general purpose amplifier and high−speed switching applications. http://onsemi.com • High DC Current Gain • • •


    Original     		BD777 BD776 BD777, BD780 BD777/D PDF

    60 amp npn darlington power transistors

    Abstract: transistor HJ 388 MJ11030 MJ11033 TRANSISTOR MJ11029 MJ11028 MJ11029 MJ11031 MJ11032 transistor MJ11032
    Text: ÆàMOSPEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DC Current Gain: hFE = 1000 Min @ lc = 25 A hFE = 400(Min) @ lc = 50 A


    OCR Scan     		MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 MJ11029 MJ11031 60 amp npn darlington power transistors transistor HJ 388 MJ11033 TRANSISTOR MJ11029 transistor MJ11032 PDF

    1N5825

    Abstract: MJ11021 MJ11021G MJ11022 MJ11022G MSD6100
    Text: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types)


    Original     		MJ11021 MJ11022 MJ11022, O-204 MJ11021/D 1N5825 MJ11021G MJ11022 MJ11022G MSD6100 PDF

    D39C2

    Abstract: D39C3 D38L3 D38L1 D39C1 lBX1000 D38L1-6 D38L2 D39C1-6 complementary npn-pnp power transistors
    Text: Silicon Transistors Complementary Darlington 123 D38L1-6 The General Electric D38L1-6 and D39C1-6 are Silicon Planar, Epi­ taxial, NPN-PNP complimentary Darlington amplifiers. These devices are designed for medium current-amplifier and switching applications.


    OCR Scan     		D38L1-6 D39C1-6 D39C1-6 lBX1000 D39C2 D39C3 D38L3 D38L1 D39C1 lBX1000 D38L2 complementary npn-pnp power transistors PDF

    MJ2501

    Abstract: npn darlington transistor 150 watts MJ3001
    Text: ON Semiconductort PNP MJ2501 Medium-Power Complementary Silicon Transistors NPN MJ3001 . . . for use as output devices in complementary general purpose amplifier applications. ON Semiconductor Preferred Devices • High DC Current Gain — • 10 AMPERE DARLINGTON


    Original     		MJ2501 MJ3001 r14525 MJ2501/D MJ2501 npn darlington transistor 150 watts MJ3001 PDF

    NTE2349

    Abstract: 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350
    Text: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.


    Original     		NTE2349 NTE2350 250mA 500mA 200mA 300mA NTE2349 300w power amplifier circuit diagram complementary npn-pnp darlington 300w nte2350 PDF

    300w power amplifier circuit diagram

    Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
    Text: NTE2349 NPN & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.


    Original     		NTE2349 NTE2350 250mA 500mA 200mA 300mA 300w power amplifier circuit diagram complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234 PDF

    MJ4035

    Abstract: mj4032 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034
    Text: MJ4030 – MJ4031 – MJ4032 PNP MJ4033 – MJ4034 – MJ4035 NPN DARLINGTON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. • High DC current Gain – hFE=3500 Typ @ IC=10 Adc


    Original     		MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 MJ4033/34/35 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034 PDF

    wf vqe 24 d

    Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058
    Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc


    OCR Scan     		2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 PDF

    2sd2011

    Abstract: 2SB1333 transistor 2SD 2sd darlington
    Text: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333


    OCR Scan     		2SD2011 2SB1333 2SD2011, 2sd2011 transistor 2SD 2sd darlington PDF

    Motorola transistor 388 TO-204AA

    Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


    Original     		2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214 PDF

    MJH11021

    Abstract: No abstract text available
    Text: ON Semiconductort PNP MJH11017 * Complementary Darlington Silicon Power Transistors MJH11019 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11021 * • High DC Current Gain @ 10 Adc — •


    Original     		MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 MJH11018, MJH11020, MJH11022, MJH11017 MJH11021 PDF

    npn darlington transistor 150 watts

    Abstract: MJH11022 mjh11019 1N5825 MJH11017 MJH11018 MJH11020 MJH11021 MSD6100
    Text: ON Semiconductort PNP Complementary Darlington Silicon Power Transistors MJH11017 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11021 * MJH11019 * NPN • High DC Current Gain @ 10 Adc —


    Original     		MJH11017 MJH11021 MJH11019 MJH11018 MJH11018, MJH11020, MJH11022, MJH11020 MJH11022 r14525 npn darlington transistor 150 watts MJH11022 mjh11019 1N5825 MJH11017 MJH11018 MJH11020 MJH11021 MSD6100 PDF

    MJH11019

    Abstract: MJH11022 1N5825 MJH11017 MJH11018 MJH11020 MJH11021 MSD6100
    Text: ON Semiconductort PNP Complementary Darlington Silicon Power Transistors MJH11017 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11021 * MJH11019 * NPN • High DC Current Gain @ 10 Adc —


    Original     		MJH11017 MJH11021 MJH11019 MJH11018 MJH11018, MJH11020, MJH11022, MJH11020 MJH11022 r14525 MJH11019 MJH11022 1N5825 MJH11017 MJH11018 MJH11020 MJH11021 MSD6100 PDF

    2N6284G

    Abstract: 2N6287G 2N6284 2N6286 2N6286G 2N6287 JEDEC tray dimension
    Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −


    Original     		2N6284 2N6286, 2N6287 2N6286 2N6284/87 O-204AA 2N6284G 2N6287G 2N6284 2N6286 2N6286G 2N6287 JEDEC tray dimension PDF

    2N6284G

    Abstract: 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287
    Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −


    Original     		2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N628t 2N6284/D 2N6284G 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287 PDF

    MJ11021

    Abstract: 1N5825 MJ11017 MJ11018 MJ11022 MSD6100
    Text: ON Semiconductort PNP MJ11017 Complementary Darlington Silicon Power Transistors MJ11021 * NPN MJ11018* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — •


    Original     		MJ11017 MJ11021 MJ11018* MJ11022 MJ11018, MJ11022, r14525 MJ11017/D MJ11021 1N5825 MJ11017 MJ11018 MJ11022 MSD6100 PDF

    2N6282 MOTOROLA

    Abstract: 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola
    Text: MOTOROLA Order this document by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc —


    Original     		2N6282/D 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6282 MOTOROLA 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola PDF

    2N6059 MOTOROLA

    Abstract: 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —


    OCR Scan     		2N6052/D 2N6058 2N6052, 2N6059 2N6052* 2N6059* Box5405, 2N6059 MOTOROLA 2N6058 MOTOROLA PDF

    2n6284

    Abstract: No abstract text available
    Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −


    Original     		2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N6284/D 2n6284 PDF

    1N5825

    Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —


    Original     		2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA PDF

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


    Original     		2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 PDF