ZVN3320
Abstract: ZVN3320A ZVN3320F WOS78 ZVN3320B 200v 100mA mosfet
Text: bGE D • *n7D57fl DDD7flb7 434 ■ Z E T B _ , ZETEX S E M I C O N D U C T O R S N-channel enhancement mode vertical DMOS FET ZVN3320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability •
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7057fl
ZVN3320
ZVN3320A
ZVN3320B
ZVN3320F
250in
100mA,
100mA
300/is.
ZVN3320
WOS78
200v 100mA mosfet
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FDT434P
Abstract: bsit
Text: =M l C O N D U C T O R tm FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified M O SFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state
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FDT434P
FDT434P,
FDT434P
bsit
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IRF723R
Abstract: No abstract text available
Text: IR F720/721/722/723 IRF720R/721R/722R/723R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 2.8A and 3.3A, 350V - 400V • i"DS on = and 2 .5 fl • Single Pulse Avalanche Energy Rated* • SOA Is Power-Dissipation Limited
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F720/721/722/723
IRF720R/721R/722R/723R
IRF720,
IRF721,
IRF722,
IRF723
IRF720R,
IRF721R,
IRF722R
IRF723R
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290A transistor
Abstract: No abstract text available
Text: APTM20UM03F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM20UM03F-AlN
APTM20UM03F
290A transistor
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dk 434
Abstract: No abstract text available
Text: APTM20UM03FAG VDSS = 200V RDSon = 3mΩ typ @ Tj = 25°C ID = 580A @ Tc = 25°C Single Switch MOSFET Power Module SK D S DK G S D DK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features
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APTM20UM03FAG
to600
APTM20UM03FAG
dk 434
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APT0502
Abstract: APT0601 APTM20UM03FAG
Text: APTM20UM03FAG VDSS = 200V RDSon = 3mΩ typ @ Tj = 25°C ID = 580A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S D Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode
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APTM20UM03FAG
APTM20UM03FAG
APT0502
APT0601
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Untitled
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT SPECIFICATION Prepared also subject responsible if other EAB/FAC/P Johan Hörman Approved 1 (4) No. Checked BMR 463 series POL Regulators Input 4.5-14 V, Output up to 20 A / 66 W 1/1301-BMR 463Technical Uen Specification Date
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1/1301-BMR
463Technical
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Untitled
Abstract: No abstract text available
Text: E Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION Prepared also subject responsible if other SEC/S GavinSusanne EAB/FAC/P Du Eriksson Approved BMR 463 series Regulators EAB/FAC/P [SusannePOL Eriksson] 1 (3) 2 (4) No. Checked Input 4.5-14 V, Output up to 25 A / 82.5 W
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1/1301-BMR
463Technical
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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2SK1462
Abstract: No abstract text available
Text: 2SK1462 2056 U H Ultrahigh Voltage Series V DE3 = 9 0 0 V N Channel Power MOSFET F e a tu re s • Low O N -state resistance. •Very high-speed switching. • C onverters. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage V DSS
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2SK1462
10//S,
T03PB
6131JN
2SK1462
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Untitled
Abstract: No abstract text available
Text: E Ericsson Internal TABLE OF CONTENTS Prepared also subject responsible if other SEC/S Stella Song Approved 1 (2) No. Checked BMR463 series PoL Regulators Input 4.5-14 V, Output up to 20 A / 66 W 001 52-EN/LZT 146 434 Uen Specification Technical Date 2012-09-26
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BMR463
52-EN/LZT
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voltage level shifter 3.3V to 5V
Abstract: ultrasound air ultrasound piezoelectric transducer for medical MD1210 MD1210K6-G TC6320TG SY QFN
Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring
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MD1210
MD1210
DSFP-MD1210
B011507
voltage level shifter 3.3V to 5V
ultrasound air
ultrasound piezoelectric transducer for medical
MD1210K6-G
TC6320TG
SY QFN
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N08 Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET 1 TO-220 DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low
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UTT75N08
O-220
UTT75N08
O-220F1
QW-R502-769
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Untitled
Abstract: No abstract text available
Text: MD1210 High Speed Dual MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring
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MD1210
MD1210
DSFP-MD1210
B011507
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TO-220F1
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N08 Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low
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UTT75N08
UTT75N08
ON21m
O-220
O-220F1
QW-R502-769
TO-220F1
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UTT75N08
Abstract: ID75A
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT75N08 Power MOSFET 75A, 80V N-CHANNEL POWERTRENCH MOSFET DESCRIPTION The UTC UTT75N08 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low
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UTT75N08
UTT75N08
ON21m
QW-R502-769
ID75A
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RC435
Abstract: No abstract text available
Text: SFW/I9624 Advanced Power MOSFET FEATURES BV dss = -250 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VOS = -250V
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-250V
SFW/I9624
RC435
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BF963
Abstract: SIEMENS marking siemens MOSFET bf 434 BB515 D270K BF 963
Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 963 • For high-gain, low-distortion VHF TV and FM mixer and input stages Type Marking Ordering Code BF 963 - Q62702-F904 Pin Configuration 1 2 4 3 S D G2 Package1 Gì X-plast Maximum Ratings Parameter Symbol Values
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Q62702-F904
fiS35bQ5
20mS30
6235b05
D270k
BB515
270kX
BF963
SIEMENS marking
siemens MOSFET
bf 434
BB515
BF 963
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Untitled
Abstract: No abstract text available
Text: SSF6N80A Advanced Power MOSFET FEATURES BVdss - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ » Low RDS(ON) : 1.472 ii( T y p )
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SSF6N80A
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3v1040
Abstract: SI4890DY
Text: SPICE Device Model SI4890DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range
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SI4890DY
3v1040
SI4890DY
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SSH6N80
Abstract: ssh-6n80 SSH6N70
Text: N-CHANNEL POWER MOSFETS SSH6N80/70 FEATURES • Lower Rdsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability
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SSH6N80/70
SSH6N80
SSH6N70
ssh-6n80
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET I FS100VSJ-03 HIGH-SPEED SWITCHING USE - » FS1OOVSJ-03 * * • 4V DRIVE • VDSS . 30V • rDS ON (MAX) .4 . 7 m ii • Id . 100A
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FS100VSJ-03
FS1OOVSJ-03
100ns
571CH23
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10VJ
Abstract: IRFS440 IRFS441 Cto150 ir*440
Text: N-CHANNEL POWER MOSFETS IRFS440/441 FEATURES • L o w e r R d s <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFS440/441
IRFS440
IRFS441
10VJ
Cto150
ir*440
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Untitled
Abstract: No abstract text available
Text: STE53NC50 N-CHANNEL 500V - 0.075Ω - 53A ISOTOP PowerMesh II MOSFET n n n n n TYPE VDSS RDS on ID STE53NC50 500V < 0.08Ω 53 A TYPICAL RDS(on) = 0.075 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STE53NC50
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