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    TDK Corporation C0603C0G1E100D030BA

    CAP CER 10PF 25V C0G 0201
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    TDK Corporation CGA1A2C0G1E060D030BA

    CAP CER 6PF 25V C0G 0201
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    CAP CER 6.8PF 25V C0G 0201
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    D030B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK 4301

    Abstract: STK power amplifier 4301 PIC16F690 PWM c programming PIC16F/LF1946/47 PIC16F1947 pic16lf1947 PIC16F1946 PIC16F690 LED project with assembly language PIC16F194 DS41414B
    Text: PIC16F/LF1946/47 Data Sheet 64-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41414B Note the following details of the code protection feature on Microchip devices:


    Original
    PDF PIC16F/LF1946/47 64-Pin DS41414B DS41414B-page STK 4301 STK power amplifier 4301 PIC16F690 PWM c programming PIC16F/LF1946/47 PIC16F1947 pic16lf1947 PIC16F1946 PIC16F690 LED project with assembly language PIC16F194 DS41414B

    BUK454-800A

    Abstract: BUK454-800B T0220AB
    Text: N AUER PHILIPS/DISCRETE fc^E D • bb53T31 D030b35 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    PDF bb53T31 D030b35 BUK454-800A/B T0220AB BUK454 LIMIBUK454-800A/B BUK454-800A BUK454-800B

    Untitled

    Abstract: No abstract text available
    Text: ÿ CYPRESS PRELIMINARY W 195B Frequency Generator for Integrated Core Logic Features SDRAM, APIC, 48MHz Output Skew: . .250 ps • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Low jitter and tightly controlled clock skew


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    PDF 48MHz 17Q979

    5962-9752701Q3A

    Abstract: qml-38535
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 5 4 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE


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    PDF 10-BIT GG470Ã 5962-9752701Q3A qml-38535

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation


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    PDF bb53T31 3Db40 BUK455-60A/B BUK455 -TO220AB

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D MI CR O D E V I C E S 3ÖE D 0 2 5 7 5 2 5 QQ3fit,bö 3 IAMD1 Preliminary Advanced Micro Devices 80C186 CMOS High Integration 16-Bit Microprocessor DISTINCTIVE CHARACTERISTICS • Direct addressing capability to 1 MByte of memory and 64-KByte I/O


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    PDF 80C186 16-Bit 64-KByte 0257S2S QFP080 4635A

    mcm6830

    Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
    Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories


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    PDF MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H IL IP S /D IS C R E T E bRE D • bb5 3 R31 DD3 0 b 35 Philips Sem iconductors N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF O220AB K454-800A/B BUK454 -800A BUK454-800A/B

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SENICOND S ECTOR H a r r i H3DSS71 Q D 3 ñ b m MbE D IHAS T 82C237 s S E M I C O N D U C T O R CMOS High Performance Programmable DMA Controller February 1992 Features Description • Fully Compatible with Harris 82C37A - 82C237 May be Used in 8MHz and 12.5MHz 82C37A


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    PDF H3DSS71 82C237 82C237 82C37A. 82C37A 16-bit T--52--33--19-

    VHZ 463

    Abstract: nsk Crystal 2N41
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N E INA110 1 INA110 Fast-Settling FET-lnput INSTRUMENTATION AMPLIFIER APPLICATIONS • FAST SETTLING: 4|is to 0.01% • MULTIPLEXED INPUT DATA ACQUISITION SYSTEM • HIGH CMR: 106dB min; 90dB at 10kHz


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    PDF INA110 106dB 10kHz 50ppm/ AD524 AD624 INA110 2N4117A 7313bS 0030bL VHZ 463 nsk Crystal 2N41

    qpsk modulator chip stanford telecom

    Abstract: 39HXC
    Text: <$2¡L0E A d v a n c e In f o r m a t io n S p e c if ic a t io n Z2000 S prea d -S pectrum T r a n s c e iv e r FEATURES BENEFITS • C o m p le te D ire c t S e q u e n c e S p re a d -S p e c tru m Transceiver in a Single CMOS 1C ■ High Performance and High Reliability for Reduced


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    PDF Z2000 MHzZ2000 100-Pin 0030b4fl Z0200020FSC Z0200045FSC Z2000 Z2000, qpsk modulator chip stanford telecom 39HXC

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs <DRAM MODULE MH2V325CJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 67108864-BIT 2097152-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH2V325CJJ is 2097152-word x 32-bit dynamic RAW. This consists of four industry standard 2M x 8 dynamic RAMs in TSOP.


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    PDF MH2V325CJJ-5 67108864-BIT 2097152-WORD 32-BIT) MH2V325CJJ 32-bit H2V325CJ MH2V325CJJ-7

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N | B B INA103 | i i I INA103 Low Noise, Low Distortion INSTRUMENTATION AMPLIFIER APPLICATIONS • LOW NOISE: 1nV/VHz • LOW THD+N: 0.0009% at 1kHz, G = 100 • HIGH QUALITY MICROPHONE PREAMPS


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    PDF INA103 100MHz 110dB AD625 INA103 17313LS 0030b33

    100-P

    Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
    Text: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF K456-60A/B BUK456 T0220AB BUK456-60A/B 100-P BUK456-60A BUK456-60B T0220AB dm 369 rv

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E bbS3T31 003Dbb5 Ebl * A P X D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF bbS3T31 003Dbb5 T0220AB BUK455-600B 100-IE/ 0030bb7 455-600B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs DRAM MODULE MH1M72CTJ-6.-7 FAST PAGE MODE 75497472-BIT(1048576-WORD BY 72-BIT)DYNAMIC RAM DESCRIPTION The MH1M72CTJ is 1048576-word x 7 2 -b it dynamic RAM module. This consists of eighteen industry standard 1M x 4 dynamic RAMs in TSOP and tw o industry standard input


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    PDF MH1M72CTJ-6 75497472-BIT 1048576-WORD 72-BIT MH1M72CTJ MH1M72CTJ-6 MH1M72CTJ-7 QD30bbl

    Untitled

    Abstract: No abstract text available
    Text: AMP Card Edge Connectors Board-to-Board, Wire-to-Board Catalog 82619 Revised 8-96 Standard Edge .050 Series Connectors Product Facts Standard Edge .050 Series Connectors • High density .050 [1.27] centerline spacing of contacts ■ Easy mating of high-circuit


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    PDF E28476 D030b

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS PRELIMINARY W199 Spread Spectrum FTG for VIA Apollo Pro-133 Features Table 1. Mode Input Table • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Single-chip system frequency synthesizer for VIA Apollo Pro-133 Pin 2 PCLSTOP#


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    PDF Pro-133 48-MHz 24-MHz 48-pin

    BUK582-100A

    Abstract: No abstract text available
    Text: N AUER p HT/l IPS/EISCRETE b'iE ]> • 1^53^31 ÜD3DÛ4Ô T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode


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    PDF D3Dfl40 BUK582-100A OT223 ID/100 bbS3131 D030flS3 BUK582-100A OT223.