IRG4PSH71KD
Abstract: GE 84A Diode LT 410 diode lt 247
Text: PD - 91688 PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for
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IRG4PSH71KD
O-247
O-264,
O-247,
IRG4PSH71KD
GE 84A
Diode LT 410
diode lt 247
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IC 282
Abstract: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRG4PSC71KD diode lt 247
Text: PD - 91684 PRELIMINARY IRG4PSC71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for
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IRG4PSC71KD
O-247
O-264,
O-247,
IC 282
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
IRG4PSC71KD
diode lt 247
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IC OZ 9936
Abstract: 10E-2 38E-2 80CPQ020
Text: PD-20711 rev. B 11/99 80CPQ020 80 Amp SCHOTTKY RECTIFIER TO-247AC Description/Features This center tap Schottky rectifier has been optimized for ultra low forward voltage drop specifically for 3.3V output power supplies. The proprietary barrier technology allows for reliable
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PD-20711
80CPQ020
O-247AC
IC OZ 9936
10E-2
38E-2
80CPQ020
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10E-2
Abstract: 38E-2 80CPQ020 BV-24
Text: PD-20711 rev. B 11/99 80CPQ020 80 Amp SCHOTTKY RECTIFIER TO-247AC Description/Features This center tap Schottky rectifier has been optimized for ultra low forward voltage drop specifically for 3.3V output power supplies. The proprietary barrier technology allows for reliable
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PD-20711
80CPQ020
O-247AC
10E-2
38E-2
80CPQ020
BV-24
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60KQ30LB
Abstract: 180I 60KQ20LB 60KQ20LE 60KQ30LE
Text: SCHOTTKY BARRIER DIODE 60KQ20LE 60KQ30LE 60KQ20LB 60KQ30LB 66A / 2 0 — 3 0 V FEATURES 0 Similar to TO-247AC 10-3P Case ° Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency » High Surge Capability ° 10 Volts thru 60 Volts Types Available
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6A/20â
60KQ20LE
60KQ30LE
60KQ20LB
60KQ30LB
O-247AC
60KQ20LB
60KQ30LB
bbl512B
180I
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 16KQ50 16KQ60 16KQ50B 16KQ60B 16.6a /50~ 60v FEA T U R ES 15.91626 • 15.&6Ô2) °Similar to TO-247AC TO-3P) Case 3.61.142) r. % 5.7(.224) 5.3(.208) r • Lo w Forward Voltage Drop 1.6(.063) 4X169) 3.7(.145) MAX 0 Lo w Power Loss, High Efficiency
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16KQ50
16KQ60
16KQ50B
16KQ60B
O-247AC
4X169)
47C215)
2C559)
bbl51E3
16KQ50
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xg-hs
Abstract: dc dc converter melcher 24 imr 15-12-2 pin out melcher LM 1000 dc dc converter melcher 24 imr 15-12-2 Melcher family lm 3000 melcher am 1000 dc-dc melcher am 3000 converter
Text: IMR 15-Family DC-DC Converters <40 W Benign Environment 15 W DC-DC Converters IMR 15-Family Input to output electric strength test 500 V DC Single or dual output 5 i \ ^ i 2472 .0" x u 51 2.0" Summary with standard battery voltages. The IMR 15 converters fea
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15-Family
3/1197/IN
xg-hs
dc dc converter melcher 24 imr 15-12-2 pin out
melcher LM 1000
dc dc converter melcher 24 imr 15-12-2
Melcher family lm 3000
melcher am 1000 dc-dc
melcher am 3000 converter
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melcher dc imr
Abstract: BW 6122
Text: Benign Environment DC-DC Converters <40 W IMR 6-Fomily 6 W DC-DC Converters IMR 6-Family Input to output electric strength test 500 V DC Single or dual output r - '- 'x 5i \ n- ^ J 2 .0 " x|— 51 2 .0 " 247- Summary The IMR 6 fam ily of DC-DC converters have been devel
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3/1197/IN
melcher dc imr
BW 6122
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW8N60E TMOS E-FET Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTW8N60E
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE KCQ20A04 22A/40v FEATURES O Similar to TO-247AC TO-3P Case o Dual Diodes - Cathode Common o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability o 40 Volts through 100 Volts Types Available Dimensions in nun (Inches)
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KCQ20A04
2A/40v
O-247AC
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 30KQ30 30KQ40 30KQ30B 30KQ40B 33A/30~ 40V FEATURES •Similar to TO-247AC TO-3P Case • Low Forward Voltage Drop “ Low Power Loss, High Efficiency • High Surge Current Capability ° 30 Volts through 60 Volts Types Available 30KQ* *B
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30KQ30
30KQ40
30KQ30B
30KQ40B
3A/30~
O-247AC
30KQ30
30KQ30B
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IC 74LS247
Abstract: J15S BCD to 7 segment decoder with tails 74LS247 diode lt 247 74ls247 pin configuration 5T74
Text: S G S-THOHSON D7E D | 713TE37 ÜGlbaib 0 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS f : ; ! 5T74LS247/248 î 67C 16345 T - 'S l- r f D PRELIMINARY DATA BCD-TO-SEVEN-SEGMENT DECODER/DRIVES DESC RIPTIO N T he T54LS/T74LS 247/248 are BCD-to-seven seg m ent Decoder/Drivers. They com pose the and with
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713TE37
5T74LS247/248
T54LS/T74LS
LS247
LS248
IC 74LS247
J15S
BCD to 7 segment decoder with tails
74LS247
diode lt 247
74ls247 pin configuration
5T74
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tc951
Abstract: KCF16A50 DIODE MNN 55nsec
Text: 17.7A /500V /trr:55nsec FAST RECOVERY DIODE KCF16A50 FEATURES 5.31209 4.71.185) M o Similar to TO - 247AC Case 5.71224) 5.3 .2ÛS) ° Dual Diodes- Cathode Common h h ° Ultra-Fast Recovery I 4.3(.169) I 3.7Î.ÏÏ5) o Low Forward Voltage Drop O ff 2.2C087)
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A/500V/trr
55nsec
KCF16A50
247AC
8C031)
tc951
KCF16A50
DIODE MNN
55nsec
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LT 0216 diode
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEl 30 lFAVM = 26 A VRRM = 1200 V trr = 40 ns TO-247 A = Anode, C = Cathode Maximum Ratings Symbol Test Conditions Urhs W » TVj = T"vjM Tc = 85°C; rectangular, d = 0.5 t, < 10 us; rep. rating, pulse width limited by TVJM
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O-247
O-247
LT 0216 diode
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URG7
Abstract: 1200V Ultrafast Power Rectifier Ultrafast recovery 1200 V
Text: RURG75120 fR HARRIS S E M I C O N D U C T O R 75A, 1200V Ultrafast Diode D e c e m b e r 1993 Package Features • Ultrafast with Soft Recovery. <125ns JEDEC STYLE 2 LEAD TO-247 TOP VIEW • Operating
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RURG75120
O-247
125ns
TA49032)
125ns)
RURG75120
URG7
1200V Ultrafast Power Rectifier
Ultrafast recovery 1200 V
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH lU I E im iillC i H21B1/2/3 SYMBOL A ' t @ 6, =4 SECTION X - X~T~ LEAD PROFILE 8T133»-0t A, A; b. P 0, 0; Si £ L MILLIMETERS MIN. MAX. 10.7 1V0 3.0 3Z 30 3.2 600 .750 .50 MOM, 247 24.3 11.8 3.0 6.9 2,3 6.15 12.0 INCHES MIN MAX .422
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H21B1/2/3
8T133
ST1148
ST11S2
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 16KQ30 16KQ40 16KQ30B 16KQ40B 16.6A/30— 40V FEATURES °Similar to TO-247AC TO-3P Case ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Current Capability ° 30 Volts and 100 Volts Types Available MAXIMUM R A T IN G S
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A/30--
16KQ30
16KQ40
16KQ30B
16KQ40B
O-247AC
16KQ30
16KQ40B
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60KQ40E
Abstract: 60KQ40B
Text: SCHOTTKY BARRIER DIODE 60KQ30E 60KQ40E 60KQ30B 60KQ40B 66A/30— 40V FEATURES oSimilar to TO-247AC TO-3P Case » Low Forward Voltage Drop " Low Power Loss, High Efficiency ° High Surge Current Capability ° 10 Volts thru 60 Volts Types Available 1. ^ 1.049)
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O-247AC
6A/30--
60KQ30E
60KQ40E
60KQ30B
60KQ40B
60KQ30B
0KQ40B
60KQ40B
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60KQ40E
Abstract: 60KQ30E 60KQ40B 60KQ30B diode 66a 60A KIN
Text: SCHOTTKY BARRIER DIODE 60KQ30E 60KQ40E 60KQ30B 60KQ40B 66A/30— 40V FEATU RES 3.6U42 -j5A<02>^|/3.4»Ì4Ì » Similar to TO-247AC TO-3P) Case • Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Current Capability • 10 Volts thru 60 Volts Types
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6A/30â
60KQ30E
60KQ40E
60KQ30B
60KQ40B
O-247AC
60KQ--B
60KQ30B
60KQ40B
diode 66a
60A KIN
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A
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IRFP140N
O-247
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diode duj
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 30KQ50 30KQ60 30KQ50B 30KQ60B 33A/50— 60V FEATU R ES oSimilar to TO-247AC TO-3P Case ° Low Forward Voltage Drop ' Low Power Loss, High Efficiency ° High Surge Current Capability 30 Volts through 60 Volts Types Available Dimensions in mm (Inches)
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O-247AC
3A/50--
30KQ50
30KQ60
30KQ50B
30KQ60B
30KQ50
30KQ60B
diode duj
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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TA9881
Abstract: z738 B 1403 N circuit Diagram RFV10N50BE
Text: m HARRIS S E M I C O N D U C T O R RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power M O SFETs December 1992 Package Features 5 LEAD TO-247 STYLE • 10A . 500V T OP VIEW • rDS on = 0.48Q • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds
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RFV10N50BE
O-247
RFV10N50BE
AN7254
AN7260
TA9881
z738
B 1403 N circuit Diagram
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Untitled
Abstract: No abstract text available
Text: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP244 IRFP245 N-CHANNEL Product Summary 250 Volt, 0.28 Ohm HEXFET TO-247AC TO-3P Plastic Package
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T-39-13
IRFP244
IRFP245
O-247AC
C-497
IRFP244,
IRFP245
C-498
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