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    DQ120 Search Results

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    DQ120 Price and Stock

    SiTime Corporation SIT9003AC-23-33DQ-12.0000Y

    MEMS OSC XO 12.0000MHZ LVCMOS LV
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    DigiKey SIT9003AC-23-33DQ-12.0000Y Reel 3,000 1,000
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    Microchip Technology Inc APT75DQ120BG

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    Microchip Technology Inc APT40DQ120SG

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    Microchip Technology Inc APT15DQ120KG

    DIODE STANDARD 1200V 15A TO2202
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    Microchip Technology Inc APT30DQ120BG

    DIODE STD 1200V 30A TO247 [B]
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    DigiKey APT30DQ120BG Tube 349 1
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    DQ120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original     		UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131 PDF

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]


    Original     		SM544083U74S6UU 128MByte 4Mx16 DQ111 PDF

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original     		SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns PDF

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet MU9C Routing CoProcessor RCP Family APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • • Longest Prefix Match searches of IPv4 addresses 28 Million IPv4 packets per second supports up to 18


    Original     		OC-48 PDF

    AR120

    Abstract: No abstract text available
    Text: Data Sheet APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • • Longest Prefix Match searches of IPv4 addresses 28 Million IPv4 packets per second supports up to 18 Gb Ethernet or 7 OC-48 ATM ports at wire speed


    Original     		OC-48 AR120 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRP HLA packaged Asynchronous Data Recognition and Recall Processor MH2080 MHAPPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • • Quality of Service guaranteed by deterministic compare time 28 Million IPv4 packets per second supports up to 10


    Original     		MH2080 PDF

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79 PDF

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


    Original     		UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8


    Original     		UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil) PDF

    MT18DT8144G

    Abstract: No abstract text available
    Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM


    Original     		200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G PDF

    smart modular

    Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
    Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


    Original     		SM51441000 16MByte SM51441000 16-megabyte 100-pin, 72-bit 70/80ns 20/18W smart modular SMART Modular Technologies SM51441000-7 SM51441000-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet MU9C RCP Family APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • • • • • • • • • • • • • • Longest Prefix Match searches of IPv4 addresses 28 Million IPv4 packets per second supports up to 18 Gb Ethernet or 7 OC-48 ATM ports at wire speed


    Original     		OC-48 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation


    Original     		UG08C14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125 PDF

    tsop 138

    Abstract: DQ114
    Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation


    Original     		UG08E14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125 tsop 138 DQ114 PDF

    4020-AD

    Abstract: No abstract text available
    Text: VIS VP464641641B.VP864641641B 4M,8Mx64-Bit SDRAM SODIMM Module Prelim inary Description The VP464641641B and VP864641641B are 4Mx64-bit and 8Mx64-bit small-outline dual-in-line syn­ chronous dynamic RAM module SODIMM , It is mounted with 4/8 pieces of 4Mx16 synchronous DRAM


    OCR Scan     		VP464641641B VP864641641B 8Mx64-Bit 4Mx64-bit 4Mx16 VG36641641BT) VP464641641B, 4020-AD PDF

    D4512

    Abstract: d4512844 D29D31 DQ200-V D45128
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: ,uPD45128441 are assembled.


    OCR Scan     		MC-4564EC726 72-BIT MC-4564EC726 uPD45128441 -4564EC726EFB-A80 -4564EC726EFB-A10 D4512 d4512844 D29D31 DQ200-V D45128 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THM Y7232F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		Y7232F0EG-75 432-WORD 72-BIT THMY7232F0EG TC59SM704FT 72-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip M T A 1 1 2 Intelligent Battery Management I.C. FEATURES BENEFITS • • • D ig ita lly in te g ra te s b a tte ry c h a rg e a n d d isch a rg e c u rre n t to p ro v id e an a ccu ra te s ta te o f ch a rg e in d ica ­ tio n . •


    OCR Scan     		DS40104B-page PDF

    DQ380-V

    Abstract: r2a11 DQ500-V
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC727 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C -4 5 6 4 E C 7 2 7 is a 6 7 ,1 0 8 ,8 6 4 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 36 piece s of


    OCR Scan     		MC-4564EC727 72-BIT MC-4564EC727 uPD45128441 DQ380-V r2a11 DQ500-V PDF

    oq 0051

    Abstract: pd4564841
    Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516CD644 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD644 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 64 M SDRAM : ¿jPD4564841 are assembled.


    OCR Scan     		MC-4516CD644 16M-WORD 64-BIT MC-4516CD644 MC-4516CD644-ALES) oq 0051 pd4564841 PDF

    3M2 64-PIN

    Abstract: No abstract text available
    Text: moi En trente EDI8F32256C Inc , High Speed Eight Megabit SRAM Module 256KX32 Static RAM CMOS, High Speed Module m o D m /* Features The EDI8F32256C isa high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­


    OCR Scan     		EDI8F32256C 256KX32 EDI8F32256C 256Kx4 EDI8F32256C20MMC EDI8F32256C25MMC EDI8F32256C30MMC EDI8F32256C35MMC 3M2 64-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: VS864648041 D,VS1664648041D 8M,16MX64-Bit SDRAM Module Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-ln-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4 banks and in standard 54 pin TSOP-II package. Decoupling capacitors are mounted on power supply line for


    OCR Scan     		VS864648041 VS1664648041D 16MX64-Bit VS864648041D VG36648041DT) PC100/JEDEC PC133 VS864648041D) VS1664648041D) PDF