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    DQ124 Search Results

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    DQ124 Price and Stock

    Eaton Bussmann SDQ12-4R7-R

    INDUCT ARRAY 2 COIL 4.41UH SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SDQ12-4R7-R Reel 3,800
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    • 10000 $1.8625
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    Sager SDQ12-4R7-R 3,800
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    • 10000 $2.37
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    Eaton Bussmann SDQ12-470-R

    INDUCT ARRAY 2 COIL 47.61UH SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SDQ12-470-R Reel 3,800
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    Sager SDQ12-470-R 3,800
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    Eaton Corporation SDQ12-4R7-R

    Inductor, Coupled, 4.7 uH, 199 Milliohm, 1.12 A, 5.2mm x 5.2mm x 1.2mm - Tape and Reel (Alt: SDQ12-4R7-R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SDQ12-4R7-R Reel 12 Weeks 3,800
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    Mouser Electronics SDQ12-4R7-R
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    Richardson RFPD SDQ12-4R7-R 3,800
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    Avnet Abacus SDQ12-4R7-R Reel 16 Weeks 3,800
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    Eaton Corporation SDQ12-470-R

    Inductor, Coupled, 47 uH, 1.55 Ohm, 401 mA, 5.2mm x 5.2mm x 1.2mm - Tape and Reel (Alt: SDQ12-470-R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SDQ12-470-R Reel 12 Weeks 3,800
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    • 10000 $1.918
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    Mouser Electronics SDQ12-470-R
    • 1 -
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    Richardson RFPD SDQ12-470-R 3,800
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    • 10000 $1.82
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    Avnet Abacus SDQ12-470-R Reel 16 Weeks 3,800
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    Coiltronics SDQ12-4R7-R

    Power Inductor, 4.7Uh, 1.12A, 20%; Product Range:Sdq Series; Inductance, Parallel:4.41Μh; Rms Current, Parallel:1.12A; Saturation Current, Parallel:1.45A; Dc Resistance Max, Parallel:0.199Ohm; Leakage Inductance:-; Turns Ratio:1:1 Rohs Compliant: Yes |Eaton Coiltronics SDQ12-4R7-R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SDQ12-4R7-R Cut Tape 3,800
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    SDQ12-4R7-R Reel 3,800
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    DQ124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


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    PDF UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]


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    PDF SM544083U74S6UU 128MByte 4Mx16 DQ111

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


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    PDF SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


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    PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


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    PDF UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


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    PDF UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


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    PDF UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil)

    Untitled

    Abstract: No abstract text available
    Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8


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    PDF UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil)

    MT18DT8144G

    Abstract: No abstract text available
    Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM


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    PDF 200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G

    smart modular

    Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
    Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


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    PDF SM51441000 16MByte SM51441000 16-megabyte 100-pin, 72-bit 70/80ns 20/18W smart modular SMART Modular Technologies SM51441000-7 SM51441000-8

    SiS301

    Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
    Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.


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    PDF SiS300 128-bit SiS301 bt815 SILICON INTEGRATED SYSTEMS 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18

    Untitled

    Abstract: No abstract text available
    Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation


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    PDF UG08C14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125

    tsop 138

    Abstract: DQ114
    Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation


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    PDF UG08E14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125 tsop 138 DQ114

    DQ77

    Abstract: SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114
    Text: SM51441000LP January 1993 Rev 0 SMART Modular Technologies SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


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    PDF SM51441000LP 16MByte SM51441000LP 16-megabyte 100-pin, 72-bit 70/80ns DQ77 SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114

    dq96

    Abstract: No abstract text available
    Text: SM544044004X5GU June 1997 Rev 1 SMART Modular Technologies SM544044004X5GU 64MByte 4M x 144 CMOS DRAM Module General Description Features The SM544044004X5GU is a high performance, 64-megabyte dynamic RAM module organized as 4M words by 144 bits, in a 100-pin, dual readout, leadless,


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    PDF SM544044004X5GU 64MByte 64-megabyte 100-pin, 72-bit 70/80ns 14/12W 396mW dq96

    Untitled

    Abstract: No abstract text available
    Text: UGSN7005A8HXF-512 Data sheets can be downloaded at www.unigen.com 512MB 16M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 512MB 200pin DIMM (2PCS 256MB (16M x 144) module kit) PIN ASSIGNMENT (Front View)


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    PDF UGSN7005A8HXF-512 2560mil) 512MB 512MB 200pin 256MB 200-Pin

    Untitled

    Abstract: No abstract text available
    Text: UG08C14488HSG Revision History Jan 13 , 2000 Rev - A Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788 [email protected] Re-Tek- 561_MT UG08C14488HSG 128M Bytes (8M x 144) DRAM 200Pin DIMM w/ECC based on 8M x 8


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    PDF UG08C14488HSG 200Pin U08C14488HSG 400mil 16bit 240mil

    Untitled

    Abstract: No abstract text available
    Text: ¿ilimMtanS' SSI 32R2420 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company June 1994 DESCRIPTION FEATURES The SSI 32R2420 is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write


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    PDF 32R2420 20-Lead 32R2420RIW-4CV 32R2420IW-4CV 61993Silicon 0694-rev. DQ1243D

    PBSRAM

    Abstract: MC8031
    Text: M C80364K32, MC8031 28K32 6 4 K X 3 2 , 1 2 8 K X 3 2 PIPELINE BURST S R A M M o Sys 6 - - • High performance, low power pipeline burst SRAM


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    PDF C80364K32, MC8031 28K32 83-133MHz 100-Pin PBSRAM

    Q01-24

    Abstract: No abstract text available
    Text: bbE D INTEGRATED DEVICE ST\ • 4625771 ÜÜ12MM7 317 « I D T FOURTH GENERATION 64-BIT RISC MICROPROCESSOR 1dt ontoN IDT79R4600 Integrated Device Technology, Inc. FEATURES: • Standard operating system support includes: - Microsoft Windows NT - UNISOFT Unix™ System V.4


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    PDF 12MM7 64-BIT IDT79R4600 R4000 R4000PC/R4400PC 179-pin 208-pin 50MHz 100MHz Q01-24

    Untitled

    Abstract: No abstract text available
    Text: CMOS ST-BUS FAMILY MT90820 Large Digital Switch M ITEL Features • ISSUE 2 2,048 x 2,048 channel non-blocking switching at 8.192 Mb/s Decem ber 1996 Ordering Information MT90820AP 84 Pin PLCC MT90820AL 100 Pin PQFP -40 to +85°C Per-channel variable or constant throughput delay


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    PDF MT90820 MT90820AP MT90820AL 048Mb/s, 096Mb/s 192Mb/s MT90820 192Mb/s, 096Mb/s 048Mb/s.

    AN6914UBS

    Abstract: JIS-C-5003 112 PANASONIC TA 1001
    Text: Panasonic Comparators A N 6 9 1 4 U B S Industrial Surface Mounting Package Comparator • Overview The AN6914UBS is available for automotive and indus­ trial equipments which require high reliability through an enhanced screening process. H Features • Temperature cycle test conducted for all the products


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    PDF AN6914UBS AN6914UBS AN6914UBS- AN6914UBS, 380Fit 125TC JIS-C-5003 112 PANASONIC TA 1001

    Untitled

    Abstract: No abstract text available
    Text: j>" î f «SB SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


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    PDF SM51441000LP 16MByte SM51441000LP 16-megabyte 100-pin, 70/80ns 20/16W 70/80ns) DQ115 DQ116