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    FLL30 Price and Stock

    SMC Corporation of America 52-SY9140-FLL3-04T

    VALVE, SGL SOLENOID, BASE MT, SY SERIES | SMC Corporation 52-SY9140-FLL3-04T
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 52-SY9140-FLL3-04T Bulk 5 Weeks 1
    • 1 $351.1
    • 10 $351.1
    • 100 $351.1
    • 1000 $351.1
    • 10000 $351.1
    		Get Quote

    SMC Corporation of America 52-SY9340-FLL3-03N

    VALVE, ATEX 5 PORT SOLENOID, SY SERIES | SMC Corporation 52-SY9340-FLL3-03N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 52-SY9340-FLL3-03N Bulk 5 Weeks 1
    • 1 $664.4
    • 10 $664.4
    • 100 $664.4
    • 1000 $664.4
    • 10000 $664.4
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    FUJITSU Limited FLL300IP1

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA FLL300IP1 10
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    FLL30 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL300IL-1 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL300IL-2 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL300IL-3 Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLL300IP-4 Fujitsu 30 W GaAs FET Original PDF

    FLL30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLL300IL-2

    Abstract: J1014 FLL300IL-1 FLL300IL-3 fujitsu l-band power fets
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 FCSI0598M200 FLL300IL-2 J1014 FLL300IL-1 fujitsu l-band power fets PDF

    FLL300IL-2

    Abstract: FLL300IL-1 FLL300IL-3 1200 - 1400 MHz L-Band Applications
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 RATING4888 FLL300IL-2 FLL300IL-1 1200 - 1400 MHz L-Band Applications PDF

    FLL300IP-4

    Abstract: 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band
    Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    Original     		FLL300IP-4 FLL300IP-4 FCSI0797M200 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band PDF

    FLL300IL-3

    Abstract: FLL300IL-2 FLL300IL-1 FLL30 J10-14
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 6000mA FLL300IL-2 FLL300IL-1 FLL30 J10-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: hadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 FCSI0598M200 PDF

    fujitsu l-band power fets

    Abstract: No abstract text available
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package


    Original     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 FCSI0598M200 fujitsu l-band power fets PDF

    FLL300IP-4

    Abstract: No abstract text available
    Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    Original     		FLL300IP-4 FLL300IP-4 FCSI0797M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    Original     		FLL300IP-4 FLL300IP-4 FCSI0797M200 PDF

    fll300ip

    Abstract: No abstract text available
    Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    Original     		FLL300IP-4 FLL300IP-4 fll300ip PDF

    FLL300IP-4

    Abstract: FLL30
    Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    Original     		FLL300IP-4 FLL300IP-4 FCSI0797M200 FLL30 PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high


    OCR Scan     		FLL300IP-4 FLL300IP-4 FCSI0797M200 PDF

    FLL300IL-3

    Abstract: FLL300IL-1 FLL300IL-2
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • High Gain: G 1dB = 12.0dB (Typ.)@1,8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability • Hermetically Sealed Package


    OCR Scan     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 FCSI0598M200 FLL300IL-1 FLL300IL-2 PDF

    FLL300IL-1

    Abstract: microwave databook
    Text: F,ifm-i • FLL300IL-1, FLL300IL-2, FLL300IL-3 I 1jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-idg = 44.5dBm Typ. • High Gain: G -j^B = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability


    OCR Scan     		FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 FLL300IL-1 FLL300IL-1 microwave databook PDF

    S-20

    Abstract: R8240 UK 2,5 N JC JB jt
    Text: • S IL IC O N F A S T R E C O V E R Y R E C T IF Y IN G D IO D E S 5ÖE » OR IG IN E L E C T R I C CO LTD > #* — 2 . • trr^0.8tis fc,fll30?4 DD O Q O M a OflO I. 2 . A— • 20A -7 4 > f t FR S-20-r :/Jî H 5] -y ^ FEATURES 1. Low noise, soft recovery type.


    OCR Scan     		S-20-1" 00V-1000V -01FR -02FR -04FR -06FR -08FR -10FR R82-400 R82-600 S-20 R8240 UK 2,5 N JC JB jt PDF

    FLL300-1

    Abstract: FLL-300-1 FLL3001L-3
    Text: FLL300IL-1, FLL300IL-2, FLL300IL-3 L -B a n d Mediiuti & High Power G aAs F ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 100 w °c °c Total Power Dissipation


    OCR Scan     		FLL300IL-1 FLL300IL-2 FLL300IL-3 FLL300-1 FLL-300-1 FLL3001L-3 PDF

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202 PDF

    FLL55

    Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
    Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.


    OCR Scan     		FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    ORIGIN ELECTRIC

    Abstract: MD20SH05K MD36SH05K MD50SH05K MDA65SN1K
    Text: SILICON HIGH VOLTAGE RECTIFYING DIODES MD r jSH05K, MDA65SN1K O R I G I N E L E C T R I C CO LTD •¡ttS • S 3 E T> I • PB#JIffi>SA<lk V £ # 'S C * # l. 2 . W l E A ' * * ^ '0 MAX65kV sa f#4SS>arp|i æ >1-* 3 » Electrical Absolute maximum ratings


    OCR Scan     		MAX65kV) jSH05K, MDA65SN1K bfil3Q74 MD20SH05K MD36SH05K MD50SH05K 50HzjE5S ORIGIN ELECTRIC MDA65SN1K PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK PDF