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    FQ TRANSISTOR Search Results

    FQ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FQ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774QT1G Series z We declare that the material of product compliance with RoHS requirements. z DEVICE MARKING AND ORDERING INFORMATION Marking Shipping L2SA1774QT1G FQ 3000/Tape&Reel L2SA1774QT3G


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    PDF L2SA1774QT1G 3000/Tape L2SA1774QT3G 10000/Tape L2SA1774RT1G L2SA1774RT3G L2SA1774ST1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. L2SA1774QLTIG Series z DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SA1774QLT1G FQ 3000/Tape&Reel


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    PDF L2SA1774QLTIG L2SA1774QLT1G 3000/Tape 10000/Tape L2SA1774RLT1G SC-89

    L2SA1774QT1G

    Abstract: SC-89
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774QT1G Series z We declare that the material of product compliance with RoHS requirements. z DEVICE MARKING AND ORDERING INFORMATION Marking Shipping L2SA1774QT1G FQ 3000/Tape&Reel L2SA1774QT3G


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    PDF L2SA1774QT1G 3000/Tape L2SA1774QT3G 10000/Tape L2SA1774RT1G L2SA1774RT3G L2SA1774ST1G L2SA1774QT1G SC-89

    fq sot-23

    Abstract: marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23
    Text: 2SA1037 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE linearity. — Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF 2SA1037 OT-23 OT-23 2SC2412 -50mA 30MHz fq sot-23 marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23

    2SC2412

    Abstract: marking FQ 2SA1037 transistor marking fq
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23 2SA1037 OT-23 2SC2412 -50mA 30MHz 2SC2412 marking FQ 2SA1037 transistor marking fq

    2SA1037AK

    Abstract: 2SC2412K transistor marking fq
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1037AK SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE linearity. z Complments the 2SC2412K. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-23-3L 2SA1037AK OT-23-3L 2SC2412K. -50mA 30MHz 2SA1037AK 2SC2412K transistor marking fq

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 2SA1037 OT-23 2SC2412

    Untitled

    Abstract: No abstract text available
    Text: 2SA1037AK SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features — — 2.80 Excellent hFE linearity. Complments the 2SC2412K. 1.60 0.15 MARKING : FQ, FR, FS 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF 2SA1037AK OT-23-3L OT-23-3L 2SC2412K. -50mA 30MHz

    capacitor 10kpf

    Abstract: Ft50-43 balun transformer 50ohm BN43-202 bn43202 10KPF 103M capacitor TOROIDAL transformer specification SR703 BN-43-202
    Text: 17 TB-113 RF TEST DATA RECORD TEST SPECIFICATION - SR703 AMP REVISED VDS - 28 V UNIT # Fq MHz 1 2 3 4 5 6 7 8 9 10 11 100 110 120 130 140 150 160 170 180 190 200 IDQ - 4.0 A Pin (WATTS) INPUT RT LOSS (DB) Pout (WATTS) OPERATOR - KM ID (AMPS) -17 -19 -21


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    PDF TB-113 SR703 082uF 10KpF 10MFD capacitor 10kpf Ft50-43 balun transformer 50ohm BN43-202 bn43202 10KPF 103M capacitor TOROIDAL transformer specification BN-43-202

    AC176

    Abstract: AC184 AC127 AC128 2N2635 AC122 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924
    Text: ~ - - , - - • - 7 .-«. G E R M A N I U M PO W E R D E V I C E S Fq — - - SDE D . - . ■ . _ _£. _ ^ . - _. . - 3T473?5 00Q05Q? 2 ■ GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES


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    PDF 3T473 00Q05Q? AC107 AC116 AC117 AC121--IV AC121--V AC121--VI AC121--VII AC122 AC176 AC184 AC127 AC128 2N2635 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924

    VFC121

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson Precision Single Power Supply VOLTAGE-TO-FREQUENCY CONVERTER APPLICATIONS FEATURES • INTEGRATING A/D CONVERSION SINGLE SUPPLY OPERATION: +4.5V to +36V fQ= 1.5MHz max LOW NONLINEARITY: 0.03% max at


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    PDF 100kHz, 100kH VFC121 VFC121

    ZTB12-12

    Abstract: ZTB12-12FL ZTB25-12 ZTB25-12FL ZTB3-12 ZTB3-12FL ZTC12-12 ZTC12-12FL ZTC25-12 ZTC3-12
    Text: RF POWER TRANSISTORS 12 V o lts Supply Type Power Output. Pout Min. watts Power Input (watts) Power Gain Min. (dB) Operating Frequency fQ MHz Package ZTB3-12 3.0 0.3 10.0 175 RF4 ZTB3-12FL 3.0 0.3 10.0 175 RF5 ZTB12-12 12.0 2.5 7.0 175 RF4 ZTB12-12FL 12.0


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    PDF ZTB3-12 ZTB3-12FL ZTB12-12 ZTB12-12FL ZTB25-12 ZTB25-12FL ZTC3-12 ZTC3-12FL ZTC12-12 ZTC12-12FL ZTC25-12

    VCE05181

    Abstract: Q62702-F1345 cerec Transistor 7s
    Text: SIEMENS PNP Silicon R F Transistor B FQ 194 Preliminary Data • For low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 G H z at collector currents from 20 mA to 80 mA. • / t = 4.5 G Hz • Complementary type: BFQ 73S NPN .


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    PDF VCE05181 Q62702-F1345 023Sb05 mA100 E35b05 DDb7544 VCE05181 cerec Transistor 7s

    transistor 7B12

    Abstract: transistor 7B05 lm7805 heatsink LM7805 TO263 hb7812 7b24 LM78XXCM LM7805-TO LM7800 LM7818 TO263
    Text: iJ fQ rnN|M LM7800 Series 3-Terminal Fixed Voltage Regulators THERE- TE RIN AL POSITIVE VOLTAGE REGULATORS ì These voltage regulators are monolithic integrated circuits desighned as fixed-voltage regulators for a wide variety of applications including local, oncard regulation. These regulators employ internal


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    PDF LM7800 120EIz 50CUnA transistor 7B12 transistor 7B05 lm7805 heatsink LM7805 TO263 hb7812 7b24 LM78XXCM LM7805-TO LM7818 TO263

    2n608

    Abstract: transistor p5t 2N60B 2N60A 2n6080 2n60b4 2NS061 2N6084 IN608 2n60s4
    Text: IIiffr^«rtriLVua i i / i S 140Commerce Drive Ê W Ê Ê G fQ S G n il 2 N608Ö M o n tg o m eryvilte, PA 18936-1013 Teli i2!5 .831.;9840 2 N 6 0 84 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS >r-'REGL.ENCY .VOLTAGE ;«POWEROUT 12.5V 4 4ÖW


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    PDF 2N6Q80 N6084 230MHz iM13SÃ 3D1018 2NeD34 iSy84 2N60S4 175MHi 2N6080 2n608 transistor p5t 2N60B 2N60A 2n6080 2n60b4 2NS061 2N6084 IN608 2n60s4

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.


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    PDF BFQ33C bbS3T31 BFQ33 bbS3T31 T-37-15 7Z89164

    Untitled

    Abstract: No abstract text available
    Text: 32E D m a 2 3 t.3 2 o o o ib ^ m ? « s ip NPN Silicon RF Transistor 31 ^ 3 .3 B FQ 19P SIEMENS/ SPCLi SEMICONDS _ • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S


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    PDF BFQ19P OT-89 100fflA

    VFC121

    Abstract: No abstract text available
    Text: BUR R-BR OW N d VFC121 Precision Single Power Supply VOLTAGE-TO-FREQUENCY CONVERTER FEATURES APPLICATIONS • SINGLE SUPPLY OPERATION: +4.5V to +36V • fQ= 1.5MHz max • LOW NONLINEARITY: 0.03% max at 100kHz, 0.1% max at 1MHz • HIGH INPUT IMPEDANCE • VOLTAGE REFERENCE OUTPUT


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    PDF VFC121 100kHz, VFCI21 100kHz. VFC121

    74LS145

    Abstract: TS02H
    Text: fQ MOTOROLA SN54/74LS145 1-OF-IO DECODER/DRIVER OPEN-COLLECTOR The S N 54/74LS145, 1-of-10 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 10-digit incandescent displays. All outputs remain off for all invalid binary input conditions. It is


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    PDF SN54/74LS145 54/74LS145, 1-of-10 10-digit 74LS145 TS02H

    CM600-28

    Abstract: diode 200 Ampere IGBT BP107 CM600HA-28 T73 laser diode 600A
    Text: b4E D • 7 2 t14b21 0D0tt.7b T73 * P R X CM600HA-28 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 A venue G. Durand, BP107, 72003 L e Mans, France (43) 41.14.14 Single IGBTMOD j^ /fQ £ ju l&


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    PDF CM600HA-28 BP107, Amperes/1400 CM600HA-28 -1200A//XS -1200A/ CM600-28 diode 200 Ampere IGBT BP107 T73 laser diode 600A

    PHOTO TRANSISTOR 940nm

    Abstract: sidelooker DIODE bvoe
    Text: FQ PLASTIC SIDELOOKER PAIR OPTOELECTHOIIICS QPE1113 PACKAGE DIMENSIONS .08 DIA. 08 DIA. .050 1.27 J .050 (1 .2 7 )1 .062 DIA. .062 DIA .020 (0.51) SQ NOM .100 ( 2 .5 4 )- "ÏÔo"(2.54) .020 (0.51) .020 (0.51 )J —.175 ( 4 .4 4 ) — .175 ( 4 .4 4 )— -


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    PDF QPE1113 ST2171 ST2171 QPE1113 940nm PHOTO TRANSISTOR 940nm sidelooker DIODE bvoe

    2sc4977

    Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
    Text: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS


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    PDF 2SC2929 2SC3549 2SD1157 2SD834 2SD1073 2SB862* 2SD1128 2SD982 2SC2767 2SD1072 2sc4977 transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor

    BFQ31

    Abstract: MI350 BFQ31AR "UHF Transistors" bfq31r BFQ31A
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS ISSU E 3 - JANUARY 1996 P A R T M A R K IN G D E T A IL S BFQ31 B F Q 3 1A - S2 - S4 B FQ 31A R - S5 BFQ 31R - S3 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage


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    PDF BFQ31 BFQ31A BFQ31AR BFQ31R BFQ31 BFQ31A 10ftA, 100MHz 60MHz MI350 "UHF Transistors"

    BFQ233

    Abstract: BFQ253
    Text: Philips Components B FQ 233 JV NPN HIGH F R E Q U E N C Y H IG H V O L T A G E T R A N S IS T O R NPN silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down


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    PDF BFQ253. BFQ233 BFQ233 BFQ253