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    GS8161E18 Price and Stock

    GSI Technology GS8161E18DD-333V

    SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5ns/3ns 165-Pin FBGA - Bulk (Alt: GS8161E18DD-333V)
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    GSI Technology GS8161E18DGD-200V

    SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 6.5ns/3ns 165-Pin FBGA - Bulk (Alt: GS8161E18DGD-200V)
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    • 1000 $31.23
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    GSI Technology GS8161E18DD-333I

    SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 4.5ns/2.5ns 165-Pin FBGA - Bulk (Alt: GS8161E18DD-333I)
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    • 10000 $29.319
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    GSI Technology GS8161E18DGT-250V

    SRAM Chip Sync Dual 1.8V/2.5V 18M-Bit 1M x 18 5.5ns/3ns 100-Pin TQFP - Bulk (Alt: GS8161E18DGT-250V)
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    • 1000 $29.841
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    GSI Technology GS8161E18DD-200

    SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 165-Pin FBGA - Bulk (Alt: GS8161E18DD-200)
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    Mouser Electronics GS8161E18DD-200
    • 1 $20.23
    • 10 $18.84
    • 100 $18.17
    • 1000 $15.38
    • 10000 $15.38
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    GS8161E18 Datasheets (82)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GS8161E18 GIGA 18Mb Burst SRAMs Original PDF
    GS8161E18AD-150 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AD-150I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AD-200 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AD-200I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AD-250 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AD-250I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AD-300 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AD-300I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AT-150 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AT-150I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AT-200 GIGA 1M x 18 18Mb Sync Burst SRAM Original PDF
    GS8161E18AT-200 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AT-200I GIGA 1M x 18 18Mb Sync Burst SRAM Original PDF
    GS8161E18AT-200I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E18AT-200IT GIGA 1M x 18 18Mb Sync Burst SRAM Original PDF
    GS8161E18AT-200T GIGA 1M x 18 18Mb Sync Burst SRAM Original PDF
    GS8161E18AT-225 GIGA 1M x 18 18Mb Sync Burst SRAM Original PDF
    GS8161E18AT-225I GIGA 1M x 18 18Mb Sync Burst SRAM Original PDF
    GS8161E18AT-225IT GIGA 1M x 18 18Mb Sync Burst SRAM Original PDF

    GS8161E18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GS8161E36BGD-250

    Abstract: No abstract text available
    Text: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead 51ntation GS8161E36BGD-250

    GS8161E18AT-300

    Abstract: 36AD Boundary Scan JTAG Logic
    Text: Preliminary GS8161E18A T/D /GS8161E32A(D)/GS8161E36A(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161E18A /GS8161E32A /GS8161E36A 100-Pin 165-Bump 100-lead 8161E18A GS8161ExxA GS8161E18AT-300 36AD Boundary Scan JTAG Logic

    GS8161E18

    Abstract: GS8161E18T-225 GS8161E18T-250 GS8161E36
    Text: GS8161E18 T/D /GS816132(D)/GS816136(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline


    Original     		PDF GS8161E18 /GS816132 /GS816136 100-Pin 165-Bump 8161E18 GS8161E18T-225 GS8161E18T-250 GS8161E36

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		PDF GS8161E18/36T-250/225/200/166/150/133 100-Pin

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


    Original     		PDF GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD

    GS8161E18B

    Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004
    Text: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004

    GS8161E18

    Abstract: GS8161E18T-250 GS8161E36 A13478
    Text: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		PDF GS8161E18/36T-250/225/200/166/150/133 100-Pin 100-lead GS8161E18 GS8161E18T-250 GS8161E36 A13478

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


    Original     		PDF GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161E18/36T-225/200/180/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		PDF GS8161E18/36T-225/200/180/166/150/133 100-Pin GS8161E18T 2000C GS8161E18 2000D GS18/3662 2/2000E; 8161E18

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation


    Original     		PDF GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump

    GS8161E18D-133

    Abstract: GS8161E18D-150 GS8161E18D-166 GS8161E18D-200 GS8161E18D-225 GS8161E18D-250
    Text: Revision: 9/26/02 GS8161E18/32/36D Supplemental Datasheet Information This supplemental information applies to the GS8161E18/36T datasheet, which you will find attached to this document. This supplement includes a new package offering the 165-bump BGA—Package D , as well as an additional organization (x32, which is only


    Original     		PDF GS8161E18/32/36D GS8161E18/36T 165-bump BGA--x18 8161E18 GS8161E18D-133 GS8161E18D-150 GS8161E18D-166 GS8161E18D-200 GS8161E18D-225 GS8161E18D-250

    Untitled

    Abstract: No abstract text available
    Text: Revision: 9/26/02 GS8161E18/32/36AD Supplemental Datasheet Information This supplemental information applies to the GS8161E18/36AT datasheet, which you will find attached to this document. This supplement includes a new package offering the 165-bump BGA—Package D , as well as an additional organization (x32, which is


    Original     		PDF GS8161E18/32/36AD GS8161E18/36AT 165-bump BGA--x18 8161E18A

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


    Original     		PDF GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


    Original     		PDF GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD

    GS8161E18AT-275

    Abstract: GS8161E18AT-300 A1792
    Text: Preliminary GS8161E18/36AT-300/275/250/225/200 1M x 18, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect SCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		PDF GS8161E18/36AT-300/275/250/225/200 100-Pin 100-lead 10ithout 8161E18A GS8161E18AT-275 GS8161E18AT-300 A1792

    GS8161E36B

    Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E36B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp Features Linear Burst Order (LBO) input. The Burst function need not


    Original     		PDF GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161E18/36T-225/200/180/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


    Original     		PDF GS8161E18/36T-225/200/180/166/150/133 100-Pin 8161E18 GS18/3662 2/2000E;

    QC2004

    Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead QC2004 GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply


    Original     		PDF GS8161E18B /GS8161E32B /GS8161E36B 100-lead 165-bump

    GS8161E18B

    Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS881E18/36AT-250/225/200/166/150/133 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • On-chip read parity checking; even or odd selectable • 2.5 V or 3.3 V +10%/–5% core power supply


    Original     		PDF GS881E18/36AT-250/225/200/166/150/133 100-Pin GS881E18/36AT-250/225/200/166/150/133 881E18A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV

    GS8161E18BT-150V

    Abstract: GS8161E18BT-200V GS8161E18BT-250V QC2004
    Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


    Original     		PDF GS8161ExxB 100-Pin 165-Bump 100-lead 100-tion 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V QC2004