E160
Abstract: E193 MC10193 SY100E193 SY10E193
Text: Micrel, Inc. SY10E193 SY100E193 SY10E193 ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance
|
Original
|
PDF
|
SY10E193
SY100E193
SY10/100E193
MC10193.
M9999-032006
E160
E193
MC10193
SY100E193
SY10E193
|
XG404
Abstract: DB10 DS3595-5 ds35954 DS3595
Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces June 1999 version, DS3595-4.0 DS3595-5.0 January 2000 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
|
Original
|
PDF
|
54HSC/T630
16-Bit
DS3595-4
DS3595-5
54HSC/T630
22-bit
XG404
DB10
ds35954
DS3595
|
"on semiconductor"
Abstract: E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350
Text: MC10E193, MC100E193 5VĄECL Error Detection/ Correction Circuit The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
PDF
|
MC10E193,
MC100E193
MC10E/100E193
12-bit
r14525
MC10E193/D
"on semiconductor"
E160
MC100E193
MC100E193FN
MC100E193FNR2
MC10E193
MC10E193FN
MC10E193FNR2
p4350
|
socket 775 pinout
Abstract: PLCC28 package
Text: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
PDF
|
MC100E193
12-bit
AND8020
MC100E193
AN1404
AN1405
AN1406
AN1503
AN1504
socket 775 pinout
PLCC28 package
|
7 bit hamming code
Abstract: AN1221 HC05 HC08 hamming encoding
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1221/D AN1221 Hamming Error Control Coding Techniques with the HC08 MCU by Mark McQuilken & Mark Glenewinkel CSIC Applications INTRODUCTION This application note is intended to demonstrate the use of error control coding ECC in a digital transmission system. The HC08 MCU will be used to illustrate the code development of this process. A message
|
Original
|
PDF
|
AN1221/D
AN1221
7 bit hamming code
AN1221
HC05
HC08
hamming encoding
|
74F632
Abstract: 74F632QC C1995 DB31 DP8406 DP8406QV V52A F632 Diode cbn 9579
Text: DP8406 54F 74F632 32-Bit Parallel Error Detection and Correction Circuit General Description The DP8406 device is a 32-bit parallel error detection and correction circuit (EDAC) in a 52-pin or 68-pin package The EDAC uses a modified Hamming code to generate a 7-bit
|
Original
|
PDF
|
DP8406
74F632)
32-Bit
DP8406
52-pin
68-pin
39-bit
74F632
74F632QC
C1995
DB31
DP8406QV
V52A
F632
Diode cbn
9579
|
54HST630
Abstract: DB10 DS3595-5
Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 DS3595-5.1 July 2002 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
|
Original
|
PDF
|
54HSC/T630
16-Bit
DS3595-5
54HSC/T630
22-bit
54HST630
DB10
|
flash hamming ecc
Abstract: hamming code 512 bytes SLC nand hamming code 512 bytes hamming hamming code 7 bit hamming code micron ecc nand
Text: TN-29-08: Hamming Codes for NAND Flash Memory Devices Overview Technical Note Hamming Codes for NAND Flash Memory Devices For the latest NAND Flash product data sheets, see www.micron.com/products/nand/partlist.aspx. Overview NAND Flash memory products have become the technology of choice to satisfy highdensity, nonvolatile memory requirements in many applications. NAND Flash technology provides large amounts of storage at a price point lower than any of today's semiconductor alternatives. NAND Flash development has focused on low cost per bit,
|
Original
|
PDF
|
TN-29-08:
09005aef819bc571
09005aef819bc51c
tn2908
flash hamming ecc
hamming code 512 bytes
SLC nand hamming code 512 bytes
hamming
hamming code
7 bit hamming code
micron ecc nand
|
Untitled
Abstract: No abstract text available
Text: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
PDF
|
MC100E193
12-bit
MC100E193/D
|
DS3595-5
Abstract: 54HST630 DB10 DS3595 XG404
Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
|
Original
|
PDF
|
54HSC/T630
16-Bit
DS3595-5
54HSC/T630
22-bit
54HST630
DB10
DS3595
XG404
|
7 bit hamming code
Abstract: AN1221 HC05 HC08 AN-1221 ARCO A70 Motorola application Note 1221 IASM08
Text: Order this document by AN1221/D Freescale Semiconductor AN1221 Hamming Error Control Coding Techniques with the HC08 MCU by Mark McQuilken & Mark Glenewinkel CSIC Applications Freescale Semiconductor, Inc. INTRODUCTION This application note is intended to demonstrate the use of error control coding ECC in a digital transmission system. The HC08 MCU will be used to illustrate the code development of this process. A message
|
Original
|
PDF
|
AN1221/D
AN1221
7 bit hamming code
AN1221
HC05
HC08
AN-1221
ARCO A70
Motorola application Note 1221
IASM08
|
49C460
Abstract: 7 bit hamming code 49C465 sd1623 XOR16 SD815
Text: APPLICATION NOTE AN-151 USING 32-BIT EDCS IN 8-BIT AND 16-BIT APPLICATIONS Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION The 49C460 and 49C465 are 32-bit error detection and correction EDC devices that use a modified Hamming code easily adaptable to 16 , 32 or 64-bit applications. 16-bit
|
Original
|
PDF
|
AN-151
32-BIT
16-BIT
49C460
49C465
64-bit
16-bit
7 bit hamming code
sd1623
XOR16
SD815
|
Untitled
Abstract: No abstract text available
Text: * ERROR DETECTION/ CORRECTIVE CIRCUIT SYNERG Y SEMICONDUCTOR |Y100E193 O i l U 1 1 1 y%3 D ESCRIPTIO N FEATURES The SY10E/100E/101E193 is an errordetection and correction EDAC circuit designed for use in new, high performance ECL systems. The E193 generates hamming parity codes on an 8 -bit
|
OCR Scan
|
PDF
|
Y100E193
SY10E/100E/101E193
10KH00
|
Untitled
Abstract: No abstract text available
Text: 632 54F/74F632 32-Bit Parallel Error Detection and Correction Circuit The 32-bit parallel error detection and correction circuit EDAC in p £ ka g e . The EDAC uses a modified Hamming code to generate a 7-fflinph<Kk w fljb ito m a 32-bit data word. This check word is
|
OCR Scan
|
PDF
|
54F/74F632
32-Bit
|
|
|
Untitled
Abstract: No abstract text available
Text: NATL S E M I C O N D UP/UC hS O l l S Ô 4DE D DD712bG 1 INSC4 54F/74F420 'M S - n Sem iconductor 54F/74F420 Parallel Check Bit/Syndrome Bit Generator General Description The 'F420 is a parallel check bit/syndrome bit generator. The 'F420 utilizes a modified hamming code to generate 7
|
OCR Scan
|
PDF
|
DD712bG
54F/74F420
54F/74F420
32-bit
420-b.
ily------74F
|
Untitled
Abstract: No abstract text available
Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,
|
OCR Scan
|
PDF
|
SY10E193
SY100E193
lnternal75KÂ
MC10E/100E193
28-pin
SY10/100E193
|
Untitled
Abstract: No abstract text available
Text: ERROR DEFECTION SYN ER G Y iv iU E iy j C O R R E C T I O N CIRCl.lH ' V 1Q0 E193 S E M IC O N D U C TO R BH3353I31TS! FEATURES • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register
|
OCR Scan
|
PDF
|
lntemal75K
MC10E/100E193
28-pin
BH3353I31TS!
SY10/100E193
SY10E193JC
SY10E193JCTR
SY100E193JC
SY100E193JCTR
J28-1
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA • • • • • • M C10E193 M C100E193 Hamming Code Generation 8-Bit Word, Expandable Provides Parity of Whole Word Scannable Parity Register Extended 100E Vgg Range of -4 .2 V to 75 k il Input Pulldown Resistors
|
OCR Scan
|
PDF
|
C10E193
C100E193
MC10E/100E193
|
Z8000
Abstract: "hamming code"
Text: Am2960 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynam ic memory
|
OCR Scan
|
PDF
|
Am2960
16-Bit
Am2960s
32-bit
64-bit
Z8000
"hamming code"
|
block diagram code hamming
Abstract: SECDED 7 bit hamming code hamming code E160 E193 MC10193 SY100E193 SY10E193 generate the parity after shift register block
Text: *SYNERGY ERROR DETECTION/ CORRECTION CIRCUIT S E M IC O N D U C TO R FEATURES SY10E193 SY100E193 D E S C R IP T IO N I Hamming code generation i 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with Industry standard 10KH,
|
OCR Scan
|
PDF
|
SY10E193
SY100E193
lnternal75Kii
MC10E/100E193
SY100E193
S0013A1
000D7D2
block diagram code hamming
SECDED
7 bit hamming code
hamming code
E160
E193
MC10193
generate the parity after shift register block
|
BK 4367
Abstract: No abstract text available
Text: £31 National iufl Semiconductor 54F/74F420 Parallel Check Bit/Syndrome Bit Generator General Description TTe 'F420 is a parallel check bit/syndrome bit generator. TTe ’F420 utilizes a modified hamming code to generate 7 check bits from a 32-bit dataword, in 15 ns, when operated
|
OCR Scan
|
PDF
|
54F/74F420
32-bit
420-a.
420-b.
BK 4367
|
420AB
Abstract: No abstract text available
Text: 420 59 National mm Semiconductor 54F/74F420 Parallel Check Bit/Syndrome Bit Generator General Description The ’F420 ¡s a parallel check bit/syndrome bit generator. The ’F420 utilizes a modified hamming code to generate 7 check bits from a 32-bit dataword, in 15 ns, when operated
|
OCR Scan
|
PDF
|
54F/74F420
32-bit
420-a.
420-b.
420AB
|
Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S E M I C O N D U C T O R S DS3595-3.3 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
|
OCR Scan
|
PDF
|
DS3595-3
54HSC/T630
16-BIT
54HSC/T630
22-bit
Cobalt-60
Mil-Std-883
3X1011Rad
|
Untitled
Abstract: No abstract text available
Text: ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully com patible with industry standard 10KH,
|
OCR Scan
|
PDF
|
SY10E193
SY100E193
lnternal75KÂ
C10E/100E193
10/100E
SY10E193JC
J28-1
SY10E193JCTR
SY100E193JC
|
