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    HFP50N06

    Abstract: JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A108 50A60V
    Text: BVDSS = 60 V RDS on = 22 mΩ HFP50N06 ID = 50 A 60V N-Channel MOSFET TO-220 FEATURES 1 2 3 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.)


    Original     		PDF HFP50N06 O-220 JESD22-A103, 168hrs 300hrs JESD22-A104, 100cycles 200cycles HFP50N06 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A108 50A60V

    hfp50n06

    Abstract: HFP50n06 equivalent hfp50n0 BVDSS 50A60V hfp50n
    Text: BVDSS = 60 V RDS on = 18 mΩ HFP50N06 ID = 50 A 60V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics


    Original     		PDF HFP50N06 O-220 54typ hfp50n06 HFP50n06 equivalent hfp50n0 BVDSS 50A60V hfp50n

    hfp50n06

    Abstract: HFP50n06 equivalent c25 mosfet N-Channel MOSFET 20V n-Channel Power MOSFET hfp50n0 "N-Channel MOSFET" mosfet low vgs mosfet nA idss Huashan
    Text: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP50N06 █ APPLICATIONSL TO-220 Low Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………-55~175℃ Tj ——Operating Junction Temperature …………………………150℃


    Original     		PDF HFP50N06 O-220 Width300sDuty hfp50n06 HFP50n06 equivalent c25 mosfet N-Channel MOSFET 20V n-Channel Power MOSFET hfp50n0 "N-Channel MOSFET" mosfet low vgs mosfet nA idss Huashan