NE425S01
Abstract: NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
NE425S01-T1
NE425S01-T1B
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NE3505M04
Abstract: FL-240 NEC Ga FET marking L NE3505M04-T2 ne3505
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz Reference Only
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NE3505M04
NE3505M04-T2
50pcs
Rn/50
NE3505M04
FL-240
NEC Ga FET marking L
NE3505M04-T2
ne3505
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NE34018 equivalent
Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and
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AN1033
AN1022
NE34018 equivalent
FET model
AN1022
AN1033
NE34018
Alpha 1000 GaAsFET
as 15-f
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mobile phone basic block diagram
Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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G0706
PX10020EJ41V0PF
mobile phone basic block diagram
PG2158T5K
2SC3357/NE85634
microwave Duplexer
NE5510279A
UPC8236
NE3517S03
UPG2156
NE662M04
SW SPDT
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NE3508M04
Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )
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NE3508M04
NE3508M04-A
50pcs
NE3508M04-T2
NE3508M04-T2-A
NE3508M04
Power Transisitor 100V 2A
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
transisitor 02 p 67
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max 16801 pspice
Abstract: 40J100
Text: 0.4 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE651R479A
IMT-2000,
NE6501R479A
IR35-00-2
24-Hour
max 16801 pspice
40J100
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ne3514s02
Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3514S02
NE3514S02-T1C
NE3514S02-T1C-A
NE3514S02-T1D
NE3514S02-T1D-A
NE3514S0anty
ne3514s02
NE3514
NE3514S02-T1C s2p
marking t1c
rogers 5880
HS350
k-band amplifier
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NE3517S03
Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1C-A
NE3517S03-T1D
NE3517S03-T1D-A
NE3517S03
rt/duroid 5880
RT DUROID 5880
NE3517S03-A
marking t1c
rogers 5880
HS350
NE3517S03-T1D-A
NE3517S03-T1C
rt duroid
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NE3515S02
Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
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NE3515S02
NE3515S02-T1C
NE3515S02-T1D
NE3515S02-T1C-A
NE3515S02-T1D-A
PG10708EJ01V0DS
NE3515S02
transistor "micro-x" "marking" 3
ne3515
duroid 5880
RT DUROID 5880
X KU-BAND GAAS
HS350
ir260
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UPG2118K
Abstract: mmic e3 NEC K 2500 Eastern power dissipation in power stage 20-PIN UPG2118K-E3 2118 QFN NEC
Text: NEC's 1.5W GaAs MMIC POWER AMPLIFIER UPG2118K FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY NEC's UPG2118K is a 1.5W, 3 stage power amplifier developed primarily for DCS/PCS1800 applications. With modified external matching the UPG2118K can be tuned from 800 to 2500 MHz.
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UPG2118K
UPG2118K
DCS/PCS1800
20-PIN
1000pF
mmic e3
NEC K 2500
Eastern
power dissipation in power stage
UPG2118K-E3
2118 QFN NEC
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UPG2117K
Abstract: UPG2118K J FET RF Cascode Input upg2118
Text: NEC's VERSATILE 3V GSM UPG2117K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION • E-MODE HJ-FET TECHNOLOGY/SINGLE POSITIVE SUPPLY VOLTAGE • LOW VOLTAGE OPERATION: VDD = +3.2 V • HIGH EFFICIENCY: PAE = 57% TYP • 20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE
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UPG2117K
UPG2117K
10deg
UPG2117K-E3
20-pin
UPG2118K
J FET RF Cascode Input
upg2118
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GRM39B
Abstract: 10-PIN GRM39CH TFL0816-2N7 TFL0816-3N3 NEC K 2124
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG2124TH L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2124TH is GaAs MMIC for PA driver amplifier with variable gain function which were developed for WCDMA and another L-band application. The device can operate with 2.85 V, having the high gain and low distortion.
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PG2124TH
PG2124TH
GRM39B
10-PIN
GRM39CH
TFL0816-2N7
TFL0816-3N3
NEC K 2124
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T6s MARKING
Abstract: No abstract text available
Text: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.
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PG2253T6S
PG2253T6S
16-pin
PG10761EJ01V0DS
T6s MARKING
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Untitled
Abstract: No abstract text available
Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz
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NE6510179A
24-Hour
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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nec 151
Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.
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NE32900
NE32900
nec 151
transistor NEC ka 42
NEC D 553 C
nec, hetero junction transistor
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Untitled
Abstract: No abstract text available
Text: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA
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2SA1182
400mA
2SC2859.
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2tx transistor
Abstract: 2SC19 2SC1911 2SC1912 transistor 911 2SC191 VERO ELECTRONICS 2SC19H ic 748 ic 747
Text: SILICON NPN EPITAXIAL PLANAR TRANSISTOR r 2SC 2SC a » "J4 ft x * m INDUSTRIAL APPLICATIONS ° High Speed Switching Applications o Twin Typ« Translator fT*=6.5CH* typ O 10mA * * « # MAXIMUM R A T I N G S ( T a = 2 5iC) ^ C H A R A C T E R I S T I C SYMBOL RATING UNIT
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2SC1911
2SC1912
150/unlt
2SC19
15Min
2SC1912
2SC1912.
2SC1911,
2tx transistor
transistor 911
2SC191
VERO ELECTRONICS
2SC19H
ic 748
ic 747
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 3 watt of output power 1/3 Duty pulse operation with high linear
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NE6510379A
NE6510379A
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x 1535 ce
Abstract: 0537
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The N E 651R 479A .is a 0.4 W G a A s HJ-FET designed for middle power transmitter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high
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NE651R479A
NE6510179A
NE6510379A.
x 1535 ce
0537
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NEC k 2134 transistor
Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
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NE24283B
NE24283B
NEC k 2134 transistor
nec k 3115
transistor NEC D 587
KU 612
NEC k 3115 transistor
NEC D 587
transistor NEC D 588
NEC m 2134 transistor
P12778EJ1VODSOO
transistor KU 612
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
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NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
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AM/SSC 9500 ic data
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE428M01
NE428M01
200//m
AM/SSC 9500 ic data
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Untitled
Abstract: No abstract text available
Text: HM5164165F Series HM5165165F Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh HITACHI ADE-203-1058(Z) Preliminary Rev. 0.0 May. 25, 1999 Description The Hitachi HM5164165F Series, HM5165165F Series are 64M-bit dynamic RAMs organized as 4,194,304word x 16-bit. They have realized high performance and low power by employing CMOS process technology.
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HM5164165F
HM5165165F
16-bit)
ADE-203-1058
64M-bit
304word
16-bit.
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