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    NE34018 Price and Stock

    California Eastern Laboratories (CEL) NE34018-A

    RF MOSFET GAAS HJ-FET 2V SOT343
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    California Eastern Laboratories (CEL) NE34018-T1

    RF MOSFET GAAS HJ-FET 2V SOT343
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    California Eastern Laboratories (CEL) NE34018-64-A

    RF MOSFET GAAS HJ-FET 2V SOT343
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    California Eastern Laboratories (CEL) NE34018-T1-A

    RF MOSFET GAAS HJ-FET 2V SOT343
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    California Eastern Laboratories (CEL) NE34018-EVNF19

    EVAL BOARD FOR NE34018 1.9GHZ
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    NE34018 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE34018 NEC FET Transistor, L to S BAND LOW NOISE AMPLIFIER, N-CHANNEL HJ-FET Original PDF
    NE34018 NEC L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE34018 NEC Semiconductor Selection Guide Original PDF
    NE34018-64-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ SOT-343 Original PDF
    NE34018-A California Eastern Laboratories GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) Original PDF
    NE34018-EVGA19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE34018 1.9GHZ Original PDF
    NE34018-EVNF19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR NE34018 1.9GHZ Original PDF
    NE34018-T1 California Eastern Laboratories RF FETs, Discrete Semiconductor Products, HJ-FET 2GHZ SOT-343 Original PDF
    NE34018-T1 NEC FET Transistor, L to S BAND LOW NOISE AMPLIFIER, N-CHANNEL HJ-FET, Tape And Reel Original PDF
    NE34018-T1 NEC L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE34018-T1-63 NEC GaAs HJ-FET L to S band low noise amplifier. Idss range 30-65 mA. Original PDF
    NE34018-T1-64 NEC GaAs HJ-FET L to S band low noise amplifier. Idss range 60-120 mA. Original PDF
    NE34018-T1-64-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ SOT-343 Original PDF
    NE34018-T1-A California Eastern Laboratories RF FETs, Discrete Semiconductor Products, AMP HJ-FET 2GHZ SOT-343 Original PDF
    NE34018-T2 NEC FET Transistor, L to S BAND LOW NOISE AMPLIFIER, N-CHANNEL HJ-FET, Tape And Reel Original PDF
    NE34018-T2 NEC L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE34018-TI-63-A California Eastern Laboratories GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) Original PDF
    NE34018-TI-64-A California Eastern Laboratories GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) Original PDF

    NE34018 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V64 SOT 23

    Abstract: 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018 NE34018-A marking V64 sot343
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz NE34018 25 4 Noise Figure, NF (dB)


    Original     		PDF OT-343) NE34018 NE34018 V64 SOT 23 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018-A marking V64 sot343

    4871 marking

    Abstract: ta 7205 marking V64 sot343 NE34018 V64 SOT 23 LD SOT 423 948 LG transistor kf 508
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 3 V, ID= 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz


    Original     		PDF NE34018 OT-343) NE34018 -TI-64 24-Hour 4871 marking ta 7205 marking V64 sot343 V64 SOT 23 LD SOT 423 948 LG transistor kf 508

    025NH

    Abstract: 01E-12
    Text: NE34018 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.02pF Q1 LG_PKG LD LD_PKG 0.4nH 0.18nH DRAIN LG GATE 0.18nH 0.93nH CDS_PKG CGS_PKG 0.1pF LS 0.25nH 0.1pF LS_PKG 0.09nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 VTO -0.6885 RG 4 VTOSC RD


    Original     		PDF NE34018 3e-13 4e-12 1e-12 1e-11 95e-12 04e-12 24-Hour 025NH 01E-12

    UPG137

    Abstract: 2746 transistor NE34018 NE68818 UPC2745 UPC2771T UPC8112T UPG152TA sot26 sot363 transistor
    Text: PCS NEW! NEW! NE34018 HEMT • Low cost plastic package • + 30 dBm Output IP3 • -18 dB Input Return Loss • 0.8 dB Noise Figure • 16 dB Associated Gain UPC8112T Downconverter UPC2745 /46TB Buffer Amps • 3 V operation • 13 dB typ Conversion Gain


    Original     		PDF NE34018 UPC8112T UPC2745 /46TB OT-363 UPG152TA 30dBm OT-26 UPG137 /138GV 2746 transistor NE34018 NE68818 UPC2771T UPG152TA sot26 sot363 transistor

    5570

    Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package


    Original     		PDF NE34018 NE34018-T1 NE34018-T2 5570 C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08

    6323 GA

    Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE


    Original     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 6323 GA transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor

    transistor 8331

    Abstract: LD SOT 423 transistor marking v64 ghz kf 982 NE34018 NE34018-TI-64
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN:


    Original     		PDF NE34018 OT-343) NE34018 amplifie05 transistor 8331 LD SOT 423 transistor marking v64 ghz kf 982 NE34018-TI-64

    NE34018 equivalent

    Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
    Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and


    Original     		PDF AN1033 AN1022 NE34018 equivalent FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    2052-1215-00

    Abstract: NE622M04 rf ic 3358 2052-1215 AN1037 NE662M04 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093
    Text: California Eastern Laboratories APPLICATION NOTE AN1037 Optimizing a Silicon Bipolar LNA Performance for Blue Tooth Applications Abstract The NE662M04 is NEC's latest generation of Silicon Bipolar junction RF-transistor, using a state-of-the-art UHSO 25 GHz fT wafer process. It provides excellent low voltage/low


    Original     		PDF AN1037 NE662M04 2052-1215-00 NE622M04 rf ic 3358 2052-1215 AN1037 MCH185A121JK MCH185A4R7CK NE662M04-EVAL transistor c 6093

    NEC K 2500

    Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz


    OCR Scan     		PDF NE34018 NE34018 NE34018-T1 NE34018-T2 NEC K 2500 OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905

    ET 8211

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 20 mA FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CO HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 24-Hour ET 8211

    NE3401B

    Abstract: marking V64 sot343 NEC Ga FET marking A hjfet LT 752 1368 6808 marking lt 9093
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD TJ, < Ö C '<D <3 TJ £


    OCR Scan     		PDF OT-343) NE34018 NE34018 thTI-63 NE34018-TI-64 9SD54 24-Hour NE3401B marking V64 sot343 NEC Ga FET marking A hjfet LT 752 1368 6808 marking lt 9093

    063 793

    Abstract: transistor v63
    Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain


    OCR Scan     		PDF NE34018 NE34018 WS60-00-1 IR30-00-3 063 793 transistor v63

    Untitled

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 N O ISE FIGURE & A SSO C IA T E D GAIN v s. FR EQ U EN C Y FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typica l at 2 G H z 16.0 dB typica l at 2 G H z


    OCR Scan     		PDF OT-343) NE34018 NE34018-TI-63 NE34018-TI-64 24-Hour

    40MAG

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD CO ;u HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 40MAG

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01