HX5000
Abstract: honeywell hx3000 DTRA01-03-D-0018 honeywell SOI CMOS HX3000 mil-std-1750a Microprocessor radiation HX2000 S150 DTRA01-03-D-0018-0001
Text: As the future brings more options, we produce flexible, complete solutions Over the past three decades, Honeywell has been a leading provider of high reliability Integrated Circuit IC solutions for aerospace using advanced technologies designed to withstand the harshest
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12-Bit
AD9225
12-bit,
HX5000
honeywell hx3000
DTRA01-03-D-0018
honeywell SOI CMOS
HX3000
mil-std-1750a
Microprocessor radiation
HX2000
S150
DTRA01-03-D-0018-0001
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HC71
Abstract: No abstract text available
Text: Honeywell NON-VOLATILE RAM Advance Information 16K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7116 FEATURES • Non-volatile and NDRO Non-destructive read out • Synchronous Operation • Unlimited read/write (>1 E15 cycles) • CMOS Input Levels (TTL Optional)
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HC7116
300mW
HC71
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HC7464
Abstract: TTL 7464
Text: Honeywell NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM- MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out 1 jis Read Cycle Time • Unlimited read/write (>1E15 cycles) 250 ns Write Cycle Time Power off data retention
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HC7464
500mW
HC7464
TTL 7464
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PDF
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honeywell mram
Abstract: No abstract text available
Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out
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0D00fl4D
1x106
1x1014N/cm2
1x101
1x106rad
honeywell mram
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Untitled
Abstract: No abstract text available
Text: b3E D 4SS1Ô72 DDDIGTS HONEYI i l ELL / S NON-VOLATILE RAM Honeywell IH0N3 Ô2fl S E C Advance Information 16K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7116 FEATURES • Non-volatile and NDRO Non-destructive read out • Synchronous Operation • Unlimited read/write (>1E15 cycles)
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OCR Scan
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HC7116
300mW
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PDF
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TTL 7464
Abstract: No abstract text available
Text: b3E D Honeywell 4S51Ô72 DDD10DÖ 3ES BI H0N3 HONEYUELL/S S E C NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out • 1 |is Read Cycle Time • Unlimited read/write (>1E15 cycles)
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DDD10DÃ
HC7464
TTL 7464
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E3081
Abstract: HT2080 CINOX OSCILLATOR CMOS technology length 0.4um 12GE 88Au HT1104HZ HT2160 IC CD4066 quad bilateral switch HTMOS
Text: High Temperature Electronics for Sensor Interface and Data Acquisition Sensors Expo, October 7, 1998 Jay Goetz – Applications Engineer Honeywell SSEC 12001 St Hwy 55 Plymouth MN 55441 612 954-2520 [email protected] Introduction High Temperature designs need components rated to operate in the harsh environment in which they will be
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Report-1997,
E3081
HT2080
CINOX OSCILLATOR
CMOS technology length 0.4um
12GE
88Au
HT1104HZ
HT2160
IC CD4066 quad bilateral switch
HTMOS
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honeywell mram
Abstract: silicon on insulator
Text: HMXNV0100 h HXNV0100 64K x 16 Non-Volatile Magnetic RAM Advanced Information The 64K x 16 radiation hardened low power nonvolatile Integrated Power Up and Power Down circuitry controls Magnetic RAM MRAM is a high performance 65,536 the condition of the device during power transitions.
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HMXNV0100
HXNV0100
16-bit
honeywell mram
silicon on insulator
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Untitled
Abstract: No abstract text available
Text: HONEYÜI ELL/ S S E C 3ÖE D D 4SS1Ô72 GQOOSSfl 1 HH0N3 Advance Information 16K x 1 MAGNETORESISTIVE RAM MRAM T ^ fc -^ -O S T FEATURES Non-volatile 250 ¡as Read Cycle Time Fabricated with RICMOS 1.2 |am Process 400 ns Write Cycle Time Write Cycles in Excess of 1x1015
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1x101
1x10e
1x1014c
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PDF
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Untitled
Abstract: No abstract text available
Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s
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HXNV0100
HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
ADS-14191
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s
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HXNV01600
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
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HXNV01600
Abstract: No abstract text available
Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day
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HXNV01600
1x106
1x1010
1x1012
1x10-10
1x1014
ADS-14229
HXNV01600
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HXNV01600
Abstract: No abstract text available
Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness
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HXNV01600
1x106
1x1010
1x1012
1x10-10
1x1014
ADS-14229
HXNV01600
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HXNV0100
Abstract: No abstract text available
Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109
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HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
N61-0995-000-000
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MRAM
Abstract: BBSRAM MR2A16A honeywell memory sram
Text: MRAM Fact Sheet Overview Freescale’s magnetoresistive random access memory MRAM is a revolutionary memory technology that can replace many of today’s semiconductor memory technologies. MRAM combines the speed of SRAM and the non-volatility of flash onto a single chip.
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Sales
Abstract: worldwide distribution network catalog Magnetic sensors AD2220 3141L AD504
Text: Introduction NVE GMR Sensor Applications • • • • • • • • • • • Position of Pneumatic Cylinders Position in Robotics Applications Speed and Position of Bearings Speed and Position of Electric Motor Shafts General Field Detection in Implantable Medical Devices
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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PIC16F72 inverter ups
Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read
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element-14
element14.
element14,
PIC16F72 inverter ups
UPS inverter PIC16F72
PIC16F676 inverter hex code
16F877 with sd-card and lcd project
circuit diagram wireless spy camera
NH82801GB
xmega-a4
online ups service manual back-ups ES 500
ARM LPC2148 INTERFACING WITH RFID circuit diagram
realtek rtd 1186
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