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    onsemi HUF75321D3ST

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75321D3ST Cut Tape 3,284 1
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    HUF75321D3ST Digi-Reel 3,284 1
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    HUF75321D3ST Reel 2,500 2,500
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    Mouser Electronics HUF75321D3ST 2,469
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    Arrow Electronics HUF75321D3ST 112,500 1
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    HUF75321D3ST 17,500 16 Weeks 2,500
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    onsemi HUF75345S3ST

    MOSFET N-CH 55V 75A D2PAK
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    DigiKey HUF75345S3ST Cut Tape 2,895 1
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    HUF75345S3ST Digi-Reel 2,895 1
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    HUF75345S3ST Reel 2,400 800
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    Mouser Electronics HUF75345S3ST 1,610
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    onsemi HUF75329D3ST

    MOSFET N-CH 55V 20A TO252AA
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    DigiKey HUF75329D3ST Digi-Reel 2,483 1
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    HUF75329D3ST Cut Tape 2,483 1
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    Avnet Americas HUF75329D3ST Reel 16 Weeks 2,500
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    Mouser Electronics HUF75329D3ST 4,582
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    HUF75329D3ST Reel 2,500
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    onsemi HUF75345G3

    MOSFET N-CH 55V 75A TO247-3
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    DigiKey HUF75345G3 Tube 1,569 1
    • 1 $5.15
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    Avnet Americas HUF75345G3 Tube 16 Weeks 450
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    onsemi HUF75339P3

    MOSFET N-CH 55V 75A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75339P3 Tube 714 1
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    Avnet Americas HUF75339P3 Tube 17 Weeks 800
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    HUF75339P3 10 17 Weeks 1
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    HUF753 Datasheets (262)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75307D3 Fairchild Semiconductor 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSF Original PDF
    HUF75307D3 Fairchild Semiconductor 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3 Harris Semiconductor 13A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3 Intersil 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75307D3_NL Fairchild Semiconductor 15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3S Fairchild Semiconductor 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3S Fairchild Semiconductor 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSF Original PDF
    HUF75307D3S Fairchild Semiconductor 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3S Harris Semiconductor 13A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3S Intersil 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3ST Fairchild Semiconductor 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3ST Fairchild Semiconductor 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-252, 3-Pin Original PDF
    HUF75307D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75307D3ST_NL Fairchild Semiconductor 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307P3 Fairchild Semiconductor 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307P3 Fairchild Semiconductor 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307P3 Harris Semiconductor 13A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307P3 Intersil 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSFETs Original PDF
    ...

    HUF753 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75307

    Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334

    59E-1

    Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
    Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original
    PDF HUF75309T3ST 59E-1 AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337

    HUF75332P3

    Abstract: 75332 75332P 75332S HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75332G3, HUF75332P3, HUF75332S3S HUF75332P3 75332 75332P 75332S HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    75344g

    Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    fairchild to-220ab 75343P

    Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75343G3, HUF75343P3, HUF75343S3S fairchild to-220ab 75343P 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334

    75332P

    Abstract: 75332 75332S fairchild 75332s 1e9A HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332P 75332 75332S fairchild 75332s 1e9A HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS on = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • • RoHS compliant This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced


    Original
    PDF HUF75344A3 HUF75344A3

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75344G3, HUF75344P3, HUF75344S3S

    Untitled

    Abstract: No abstract text available
    Text: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75321D3ST

    Untitled

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75339G3, HUF75339P3, HUF75339S3S

    75337P

    Abstract: 75337 HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 75337S 358e9
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75337G3, HUF75337P3, HUF75337S3S 75337P 75337 HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 75337S 358e9

    Saber

    Abstract: 75321D AN7254 AN9321 AN9322 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334
    Text: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75321D3, HUF75321D3S Saber 75321D AN7254 AN9321 AN9322 HUF75321D3 HUF75321D3S HUF75321D3ST TA75321 TB334

    75343P

    Abstract: 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75343G3, HUF75343P3, HUF75343S3S 43oducts 75343P 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S

    HUF75333G3

    Abstract: 75333P HUF75333P3 HUF75333S3 HUF75333S3S TA75333 TB334
    Text: HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S S E M I C O N D U C T O R 56A, 55V, 0.016 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 Features Description • 56A, 55V • Ultra Low On-Resistance, rDS ON = 0.016Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original
    PDF HUF75333G3, HUF75333P3, HUF75333S3, HUF75333S3S TB334, HUF75333 1-800-4-HARRIS HUF75333G3 75333P HUF75333P3 HUF75333S3 HUF75333S3S TA75333 TB334

    75307D

    Abstract: AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 75307P KP-03
    Text: HUF75307P3, HUF75307D3, HUF75307D3S S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs April 1998 Features Description • 13A, 55V • Ultra Low On-Resistance, rDS ON = 0.090Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original
    PDF HUF75307P3, HUF75307D3, HUF75307D3S TB334, 1-800-4-HARRIS 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 75307P KP-03

    Untitled

    Abstract: No abstract text available
    Text: HUF75307T3ST Semiconductor November 1998 Data Sheet 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET » M K M M M M jfm W File Number 4364.3 Features • 2.6A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    OCR Scan
    PDF HUF75307T3ST TB334, O-261 HUF75307T3ST OT-223

    02e4

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Semiconductor Data Sheet 75A, 55V, 0.009 Ohm, N-Channel, UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S O-263AB O-263AB 02e4

    Untitled

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307

    Untitled

    Abstract: No abstract text available
    Text: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor Novem ber 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology


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    PDF HUF75321P3, HUF75321S3, HUF75321S3S HUF75321 O-263AB O-263AB

    75343P

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75343G3, HUF75343P3, HUF75343S3S 48e-1 23e-1 96e-2 HUF75343 15e-3 50e-2 40e-2 75343P

    75329p

    Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS
    Text: interrii HUF75329G3, HUF75329P3, HUF75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS

    Untitled

    Abstract: No abstract text available
    Text: in terd i HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N -Channel U ltraFET Power MOSFETs These N-Channel power M O SFETs u m are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75321D3, HUF75321D3S AN7254 AN7260.

    75333p

    Abstract: huf75333g3 75333G
    Text: interrii HUF75333G3, HUF75333P3, HUF75333S3S Data S heet Ju n e 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75333G3, HUF75333P3, HUF75333S3S AN7254 AN7260. 75333p huf75333g3 75333G