40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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PDF
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b1113
Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2
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PLUS247
247TM
O-247
O-264
O-268
16N60U1
24N60U1
30N60U1
62N60U1
24N60AU1
b1113
diode b18
35N120AU1
40N60CD1
diode b129
50N60BD1
30N60BD1
40N60BD1
IXSH 35N120AU1
diode b14
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B1109
Abstract: b1105 B1115 80n60a 80N60B IXSN80N60A B1-76 15N120B B180
Text: SCSOA IGBT S-Series Contents IGBT High Speed Low VCE sat VCES max IC VCE(sat) max PLUS247 TO-204 (IXSX) (IXSM) TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page TC = 25 °C TC = 25 °C V A V 600 48 2.2 IXSH 24N60 1000 75 2.7 IXSH 45N100 1200
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PLUS247
O-204
O-247
O-264
O-268
80N60B
35N100A
15N120B
25N120A
B1109
b1105
B1115
80n60a
IXSN80N60A
B1-76
B180
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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PDF
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15N120
Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C
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15N120
O-220
20070703a
15N120
IC IGBT 15N120
bi-directional switches IGBT
"bi-directional switches" IGBT
15n120 igbt
igbt clip
igbt for induction heating ic
IXRP 15N120 IXYS
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PDF
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IC IGBT 15N120
Abstract: 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt
Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES
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15N120
O-220AB
20110120b
IC IGBT 15N120
15n120
H1AA1
"bi-directional switches" IGBT
15n120 igbt
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PDF
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IC IGBT 15N120
Abstract: bi-directional switches IGBT 15n120
Text: IXRA 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES
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15N120
O-263AB
20110120b
IC IGBT 15N120
bi-directional switches IGBT
15n120
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PDF
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15n120
Abstract: No abstract text available
Text: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES
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15N120
O-263AB
20110120b
15n120
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PDF
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Untitled
Abstract: No abstract text available
Text: IXRP 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES
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15N120
O-220AB
20110120b
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PDF
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IC IGBT 15N120
Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT
Text: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions
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15N120
O-220
O-263
O-263
O-220
IC IGBT 15N120
15n120
"bi-directional switches" IGBT
bi-directional switches IGBT
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PDF
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IC IGBT 15N120
Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits
Text: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector
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15N120
O-220
O-263
O-220
IC IGBT 15N120
15n120
15n120 igbt
IXRP 15N120 IXYS
IXRA15N120
bi-directional switches IGBT
"bi-directional switches" IGBT
IXRP15N120
induction heating circuits
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PDF
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15N120BD1
Abstract: 15N120CD1 IXGT15N120BD1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
15N120CD1
O-247AD
O-268
15N120CD1
IXGT15N120BD1
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PDF
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15N120BD1
Abstract: 15N120 15N120CD1 IXGT15N120BD1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
15N120CD1
O-247AD
15N120BD1
15N120
15N120CD1
IXGT15N120BD1
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PDF
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15n120
Abstract: 15N120CD1 15N120BD1 IGBT g
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
15N120CD1
O-247AD
15n120
15N120CD1
15N120BD1
IGBT g
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PDF
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10n120
Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120
Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp
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MHPM6B10N120/D
MHPM6B10N120
MHPM6B15N120
MHPM6B25N120
10n120
25n120 IGBT DRIVER SCHEMATIC
IC IGBT 25N120 gate driver
igbt 10N120
25N120
IC IGBT 15N120
15N120
IC IGBT 25N120
600VIc
25A120
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PDF
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15n120
Abstract: IC IGBT 15N120 10n120 25n120 IGBT DRIVER SCHEMATIC 25N120 igbt 10N120 motorola 422-9 IC IGBT 25N120 Q1/LT 9249 APPLICATION NOTE OF 15N120
Text: MOTOROLA Order this document by MHPM6B10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These E–POWER modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0
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MHPM6B10N120/D
MHPM6B10N120
MHPM6B15N120
MHPM6B25N120
15n120
IC IGBT 15N120
10n120
25n120 IGBT DRIVER SCHEMATIC
25N120
igbt 10N120
motorola 422-9
IC IGBT 25N120
Q1/LT 9249
APPLICATION NOTE OF 15N120
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PDF
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100N120
Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50
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15N120
25N120
50N120
75N120
100N120
150N120
75N170
100N170
100N-120
IC IGBT 25N120
100N170
IC IGBT 15N120
mj 1352
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PDF
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Untitled
Abstract: No abstract text available
Text: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C
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15N120C
O-220AB
O-263
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HIGH Voltage IGBT with Diode = 30 A IXSH 15N120BD1 IC25 IXST 15N120BD1 V = 1200 V CES VCE sat = 3.4 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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15N120BD1
O-247
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PDF
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98922
Abstract: 15N1 TO-263 footprint 15N120B 15n120
Text: Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM
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15N120B
O-220AB
728B1
98922
15N1
TO-263 footprint
15N120B
15n120
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V IC25 = 30 A VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES
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Original
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15N120B
O-220AB
O-263
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PDF
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RGE 17-18
Abstract: TO220-4 weight
Text: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i
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OCR Scan
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15N120C
O-220
O-263
RGE 17-18
TO220-4 weight
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PDF
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Untitled
Abstract: No abstract text available
Text: DIXYS IGBT with Diode IXSH 15N120AU1 IC25 V Short Circuit SOA Capability Symbol Test Conditions VCES v CGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE= 1 MO 1200 V v v GEM Continuous Transient U25 U90 ' cm Tc =25°C Tc = 90°C Tc = 25°C, 1 ms
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OCR Scan
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15N120AU1
O-247AD
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PDF
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15N120CD1
Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
Text: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR
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OCR Scan
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15N120BD1
15N120CD1
O-268
15N120CD1
15N120
GC smd diode
IXGT15N120BD1
smd diode Lf 047
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PDF
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