IRFM220A
Abstract: No abstract text available
Text: IRFM220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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IRFM220A
OT-223
IRFM220A
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high
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IRF830A
IRF830B
Power247TM,
sss4n60a
IRFS634A
IRFS630A
SSP4N60A
irf640b
SSS7N60A
IRFU210A
SSP7N60A
IRF634B
IRF840A china
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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F-91742
ss8050 d 331
tip122 tip127 mosfet audio amp
KSD180
KA1M0880 application note
SS8550 D 331
dual cc BAW62
KA2S0680
ss8550 sot-23
MPSA92(KSP92) equivalent
DIODE 1N4148 LL-34
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NDT453N
Abstract: NDT2955 SOT223 FDT3612 FDT459N FDT439N FDT457N FQT13N06 FQT13N06L NDT452AP HUF75309T3ST
Text: Discrete MOSFET SOT-223 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-223 N-Channel NDT453N 30 Single 0.028 0.042 - - 28 8 3 FDT439N 30 Single - 0.045 0.058 - 10.7 6.3
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OT-223
OT-223
NDT453N
FDT439N
NDT451AN
FDT459N
FDT457N
HUF75309T3ST
HUFA75309T3ST
HUF75307T3ST
NDT453N
NDT2955 SOT223
FDT3612
FDT459N
FDT439N
FDT457N
FQT13N06
FQT13N06L
NDT452AP
HUF75309T3ST
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Untitled
Abstract: No abstract text available
Text: IRFM220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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IRFM220B
OT-223
IRFM220B
IRFM220BTF
FP001
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Untitled
Abstract: No abstract text available
Text: IRFM220A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jaA M ax BV,OSS 200 V 'DS(ofi) 0.8 Q
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OCR Scan
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IRFM220A
OT-223
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Untitled
Abstract: No abstract text available
Text: IRFM220A Advanced Power MOSFET FEATURES BVDSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1.13 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V
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OCR Scan
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IRFM220A
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OA 182 diode
Abstract: No abstract text available
Text: IRFM220A Advanced Power MOSFET FEATURES BVDSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1.13 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V
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OCR Scan
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IRFM220A
OT-23
OT-89
S0T-223
003b323
OA 182 diode
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IRFM220A
Abstract: POWER MOSFET Rise Time
Text: IRFM220A Advanced Power M O SFET FEATURES D S S • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n l D ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |jA (M ax.) @ V DS = 200V
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OCR Scan
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IRFM220A
sot-223
IRFM220A
POWER MOSFET Rise Time
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Untitled
Abstract: No abstract text available
Text: IRFM220A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ VDS= 200V
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OCR Scan
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IRFM220A
OT-223
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EZ-34
Abstract: IRFM120A U2N60
Text: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A
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IRFW/IZ14A
IRFW/IZ24A
IRFW/EZ34A
IRFW/IZ44A
IRFW/I510A
ERFW/I520A
IRFW/I530A
FRFW/I540A
IRFWfl550A
IRFW/I610A
EZ-34
IRFM120A
U2N60
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SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
SSD2104
irfm014
SSP80N06
IRFU210A
IRFI530A
SSS7N60A
IRFU*230A
sss7n60a 951
SSP2N60A
IRF640A
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