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    IRHE8130 Search Results

    IRHE8130 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRHE8130 International Rectifier 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package Original PDF
    IRHE8130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRHE8130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7261U

    Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
    Text: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage


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    PDF 1806A IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U 100Volt, 1x106 2N7261U IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Untitled

    Abstract: No abstract text available
    Text: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130


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    PDF 91806C LCC-18) IRHE7130 JANSR2N7261U MIL-PRF-19500/601 IRHE3130 IRHE4130 IRHE8130 1000K

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


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    PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original
    PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    IRHE7130

    Abstract: IRHE3130 IRHE4130 IRHE8130 JANSR2N7261U LCC-18
    Text: PD - 91806B RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRHE7130 100K Rads (Si) 0.18Ω IRHE3130 300K Rads (Si)


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    PDF 91806B LCC-18) IRHE7130 JANSR2N7261U MIL-PRF-19500/601 IRHE3130 IRHE4130 IRHE8130 1000K IRHE7130 IRHE3130 IRHE4130 IRHE8130 JANSR2N7261U LCC-18

    IRHE3130

    Abstract: IRHE4130 IRHE7130 IRHE8130 JANSR2N7261U LCC-18
    Text: PD - 91806C RADIATION HARDENED POWER MOSFET SURFCACE MOUNT LCC-18 IRHE7130 JANSR2N7261U 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7130 100K Rads (Si) IRHE3130 300K Rads (Si) IRHE4130


    Original
    PDF 91806C LCC-18) IRHE7130 JANSR2N7261U MIL-PRF-19500/601 IRHE3130 IRHE4130 IRHE8130 1000K IRHE3130 IRHE4130 IRHE7130 IRHE8130 JANSR2N7261U LCC-18

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


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    PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L

    IRHE7110

    Abstract: IRHE7130 IRHE8110 IRHE8130
    Text: PD - 90732B IRHE7110 IRHE8110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.60Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total


    Original
    PDF 90732B IRHE7110 IRHE8110 100Volt, 1x106 IRHE7110 IRHE7130 IRHE8110 IRHE8130

    IRHE713

    Abstract: IRHE7130 IRHE813 IRHE8130 IRHN7054 IRHN8054
    Text: Data Sheet No. PD 9.6 IRHE713 IRHE813 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANN MEGA RAD HAR 100 Volt, 0.18Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation


    Original
    PDF IRHE713 IRHE813 MIL-STD-750, MlL-STD-750, IRHE713 IRHE7130 IRHE813 IRHE8130 IRHN7054 IRHN8054

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.680A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHE7130 IRHE8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan
    PDF IRHE7130 IRHE8130 1x10s 1x106 SS452 IRHE7130, IRHE8130

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.680A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHE7130 IRHE8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18ft, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan
    PDF IRHE7130 IRHE8130 1x10s IRHE7130, IRHE8130

    IRHC7110

    Abstract: IRHC7130 IRHC7150 D47 MOSFET
    Text: International [^Rectifier Government/ Space Products Radiation Hard HEXFETs N-Channel Part Number Vqs Drain Source Voltage Volts Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) •DM Pu'*« Drain Current (Amps) IRHN7150 IRHN8150 IRHN7250


    OCR Scan
    PDF IRHN7150 IRHN8150 IRHN7250 IRHN8250 IRHN7450 IRHN8450 IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHC7110 IRHC7130 IRHC7150 D47 MOSFET

    IRF1644

    Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
    Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.


    OCR Scan
    PDF 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003

    JANSR2N7261

    Abstract: No abstract text available
    Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 JANSR2N7261

    IRHE7110

    Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
    Text: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0


    OCR Scan
    PDF 4flss452 IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN80S4 IRHN7130 1RHF8130

    Untitled

    Abstract: No abstract text available
    Text: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250


    OCR Scan
    PDF T-39-Ã IRHN7150 IRHN8150 IRHN7250 IRHN8250 IRHN7450 IRHN8450 IRHE7110 IRHE8110 IRHE7130

    Untitled

    Abstract: No abstract text available
    Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _


    OCR Scan
    PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHE9230 IRHN7054 IRHN8054