2SA1730
Abstract: ITR04415 ITR04416 ITR04418
Text: Ordering number:ENN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions unit:mm 2038A [2SA1730] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.
|
Original
|
ENN3134
2SA1730
2SA1730]
25max
2SA1730
ITR04415
ITR04416
ITR04418
|
PDF
|
7007B-004
Abstract: ITR04416 ITR04418 2SA1730 ITR04415
Text: 2SA1730 注文コード No. N 3 1 3 4 A 三洋半導体データシート 半導体ニューズ No.N3134 をさしかえてください。 2SA1730 PNP エピタキシャルプレーナ型シリコントランジスタ 高速度スイッチング用 特長
|
Original
|
2SA1730
N3134
250mm2
500mA
500mA
33110JB
ITR04421
7007B-004
ITR04416
ITR04418
2SA1730
ITR04415
|
PDF
|
2SA1730
Abstract: No abstract text available
Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
|
Original
|
2SA1730
EN3134A
2SA1730
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
|
Original
|
2SA1730
EN3134A
|
PDF
|