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2SA1730 Abstract: ITR04415 ITR04416 ITR04418 Text: Ordering number:ENN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions unit:mm 2038A [2SA1730] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage.	Original	PDF	ENN3134 2SA1730 2SA1730] 25max 2SA1730 ITR04415 ITR04416 ITR04418
7007B-004 Abstract: ITR04416 ITR04418 2SA1730 ITR04415 Text: 2SA1730 注文コード No. N 3 1 3 4 A 三洋半導体データシート半導体ニューズ No.N3134 をさしかえてください。 2SA1730 PNP エピタキシャルプレーナ型シリコントランジスタ高速度スイッチング用特長	Original	PDF	2SA1730 N3134 250mm2 500mA 500mA 33110JB ITR04421 7007B-004 ITR04416 ITR04418 2SA1730 ITR04415
2SA1730 Abstract: No abstract text available Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.	Original	PDF	2SA1730 EN3134A 2SA1730
Untitled Abstract: No abstract text available Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.	Original	PDF	2SA1730 EN3134A