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IXGK28N140 Price and Stock

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IXYS Corporation IXGK28N140B3H1 IGBT 1400V 60A 300W TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGK28N140B3H1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGK28N140B3H1		25			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXGK28N140B3H1		20			1 $14.52 10 $9.68 100 $9.68 1000 $9.68 10000 $9.68	Buy Now
IXYS Integrated Circuits Division IXGK28N140B3H1 IGBT DIS.DIODE SINGLE 28A 1400V GENX3 TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGK28N140B3H1					1 $7.6065 10 $7.6065 100 $6.915 1000 $6.915 10000 $6.915	Get Quote

IXGK28N140 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGK28N140B3H1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1400V 60A 300W TO264		Original	PDF

IXGK28N140 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GenX3TM 1400V IGBTs w/ Diode IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES	Original	PDF	IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IF110 28N140B3H1 11-29-10-B
4525 GE Abstract: IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1 Text: Preliminary Technical Information IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 High Voltage Co-Pack IGBT VCES = 1400 V IC25 = 60 A VCE sat ≤ 3.6 V Avalanche Rated Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	IXGH28N140B3H1 IXGK28N140B3H1 IXGX28N140B3H1 IC110 IF110 4525 GE IXGK28N140 IF110 PLUS247 ge 734 ixgk28n140b3h1
IXGK28N140B3H1 Abstract: IXGX28N140B3H1 IXGH28N140B3H1 28n140b3h1 IXGK28N140 Text: IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 GenX3TM 1400V IGBTs w/ Diode Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES	Original	PDF	IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 IC110 O-247 IC110 IF110 PLUS247 O-264 Indu60V IXGK28N140B3H1 28n140b3h1 IXGK28N140
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250