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    IXYS Corporation IXGX320N60B3

    IGBT PT 600V 500A PLUS247-3
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    DigiKey IXGX320N60B3 Tube 300 1
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    Mouser Electronics IXGX320N60B3 286
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    TTI IXGX320N60B3 Tube 300
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    TME IXGX320N60B3 14 1
    • 1 $26.84
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    IXYS Corporation IXGX120N60A3

    IGBT 600V 200A 780W PLUS247
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    Verical IXGX120N60A3 1,530 30
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    TTI IXGX120N60A3 Tube 300 30
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    TME IXGX120N60A3 1
    • 1 $19.97
    • 10 $15.74
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    IXYS Corporation IXGX75N250

    IGBT 2500V 170A 780W PLUS247
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    IXYS Corporation IXGX35N120B

    IGBT 1200V 70A 350W PLUS247
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    IXYS Corporation IXGX120N60B

    IGBT 600V 200A 660W TO247
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    IXGX Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGX100N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 170A 830W PLUS247 Original PDF
    IXGX120N120A3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 240A 830W PLUS247 Original PDF
    IXGX120N60A3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 200A 780W PLUS247 Original PDF
    IXGX120N60B IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 200A 660W TO247 Original PDF
    IXGX120N60B IXYS 600V HiPerFAST IGBT Original PDF
    IXGX120N60B3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 280A 780W PLUS247 Original PDF
    IXGX120N60C2 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 830W PLUS TO-247 Original PDF
    IXGX12N90C IXYS IGBT Discretes Original PDF
    IXGX320N60A3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 320A 1000W PLUS247 Original PDF
    IXGX32N170 IXYS Very High Voltage IGBT Original PDF
    IXGX32N170AH1 IXYS Very High Voltage IGBT Original PDF
    IXGX32N170H1 IXYS High Voltage IGBT with Diode Original PDF
    IXGX35N120B IXYS HiPerFAST IGBT Original PDF
    IXGX35N120BD1 IXYS IGBT Discretes Original PDF
    IXGX35N120C IXYS IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Original PDF
    IXGX35N120CD1 IXYS IGBT Discretes Original PDF
    IXGX400N30A3 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 300V 400A 1000W PLUS247 Original PDF
    IXGX40N60BD1 IXYS 600V HiPerFAST IGBT with diode Original PDF
    IXGX50N120C3H1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 95A 460W PLUS247 Original PDF
    IXGX50N60AU1 IXYS HiPerFAST IGBT with Diode Original PDF

    IXGX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DH60-18A

    Abstract: IXGH32N170A PLUS247
    Text: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PLUS247 PDF

    IXGK55N120A3H1

    Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
    Text: Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXGK55N120A3H1 IXGX55N120A3H1 IC110 O-264 338B2 IXGK55N120A3H1 IXGX55N120A3H1 IXGX55N120 PLUS247 IC110 PDF

    IXGX320N60A3

    Abstract: IXGK320N60A3 PLUS247
    Text: IXGK320N60A3 IXGX320N60A3 GenX3TM 600V IGBTs VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGK320N60A3 IXGX320N60A3 O-264 IC110 320N60A3 3-08-A IXGX320N60A3 IXGK320N60A3 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		60N60B2D1 IC110 O-264 PLUS247 2x61-06A PDF

    siemens igbt 75a

    Abstract: PLUS247
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		60N60C2D1 IC110 2x61-06A siemens igbt 75a PLUS247 PDF

    IXGK50N60A2D1

    Abstract: No abstract text available
    Text: Advance Technical Data IGBT with Diode IXGK50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		IXGK50N60A2D1 50N60A2D1 IC110 IF110 50N60B2D1 O-264 PLUS247 405B2 PDF

    120N60A3

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGK120N60A3 IXGX120N60A3 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V


    Original     		IXGK120N60A3 IXGX120N60A3 IC110 O-264 120N60A3 PDF

    IXGX40N120BD1

    Abstract: max3037 2040q
    Text: Advanced Technical Information High Voltage IGBT with Diode IXGX 40N120BD1 VCES IC25 VCE sat = 1200 = 75 = 3.3 = 250 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original     		40N120BD1 IC110 IF110 PLUS247 405B2 IXGX40N120BD1 max3037 2040q PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBTs VCES = 600V IC90 = 120A VCE sat ≤ 2.1V IXGK120N60B IXGX120N60B TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		IXGK120N60B IXGX120N60B O-264 120N60B PDF

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300


    Original     		IXGK400N30A3 IXGX400N30A3 10kHz O-264 IC110 400N30A3 1-18-08-A PDF

    IXGX320N60A3

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs VCES = 600V IC25 = 320A VCE sat ≤ 1.25V IXGK320N60A3 IXGX320N60A3 Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGK320N60A3 IXGX320N60A3 O-264 IC110 320N60A3 3-08-A IXGX320N60A3 PDF

    60-06A

    Abstract: 60N60C2D1 60N60C2D IF110 PLUS247
    Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		60N60C2D1 IC110 IF110 O-264 0-06A 60-06A 60N60C2D IF110 PLUS247 PDF

    120n60b

    Abstract: IC tl 072 IXGX120N60B
    Text: HiPerFASTTM IGBT IXGK 120N60B IXGX 120N60B VCES IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VCES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IL(RMS) ICM TC = 25°C


    Original     		120N60B O-264 120n60b IC tl 072 IXGX120N60B PDF

    ixgk100n170

    Abstract: 100N170 IXGX100N170 PLUS247
    Text: Preliminary Technical Information IXGK100N170 IXGX100N170 High Voltage IGBT VCES = 1700V IC90 = 100A VCE sat ≤ 3.0V TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous


    Original     		IXGK100N170 IXGX100N170 O-264 100N170 ixgk100n170 IXGX100N170 PLUS247 PDF

    IXGX320N60A3

    Abstract: No abstract text available
    Text: IXGK320N60A3 IXGX320N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 210A VCE sat  1.30V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		IXGK320N60A3 IXGX320N60A3 IC110 O-264 320N60A3 3-08-A IXGX320N60A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 300V IGBTs VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-Low Vsat PT IGBTs for up to 10kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGK400N30A3 IXGX400N30A3 10kHz O-264 IC110 400N30A3 1-18-08-A PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Fast Diode IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 VCES IC25 VCE sat tfi typ B2-Class High Speed IGBT with Fast Diode = 900 V = 75 A = 2.7 V = 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		50N90B2D1 IC110 O-247 PLUS247 PDF

    ixgx120n60b3

    Abstract: 120n60 120N60B3 GenX3TM IXGX120N60B PLUS247 IXGK120N60B3
    Text: IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBTs VCES IC110 VCE sat tfi(typ) Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 (IXGK) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGK120N60B3 IXGX120N60B3 IC110 5-40kHz 145ns O-264 120N60B3 9-10-A ixgx120n60b3 120n60 GenX3TM IXGX120N60B PLUS247 IXGK120N60B3 PDF

    SMPS IC

    Abstract: No abstract text available
    Text: High Voltage IGBTs IXGK100N170 IXGX100N170 VCES = 1700V = 100A IC90 VCE sat ≤ 3.0V TO-264 (IXGK) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES VGEM 1700 1700 V V Continuous Transient ±20 ±30


    Original     		IXGK100N170 IXGX100N170 O-264 062in. O-264) O-264 PLUS247 PLUS247) 100N170 1-26-12-A SMPS IC PDF

    diode b34

    Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110
    Text: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		40N60BD1 PLUS247 diode b34 b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor C110 PDF

    50N60BD1

    Abstract: 60-06A PLUS247 IXGK50N60BD1
    Text: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


    Original     		50N60BD1 PLUS247 0-06A 50N60BD1 60-06A PLUS247 IXGK50N60BD1 PDF

    12n90c

    Abstract: 125OC
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C IXGX 12N90C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C


    Original     		12N90C 728B1 123B1 728B1 065B1 12n90c 125OC PDF

    IXGX

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		35N120B 35N120BD1 O-264 247TM 728B1 IXGX PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGK 120N60B IXGX 120N60B VCES ^C25 V CE sat Maximum Ratings Symbol Test C onditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 600 600 V V v vGEM Continuous Transient ±20 ±30


    OCR Scan     		120N60B PLUS247â PDF