IXTH3N100P Search Results

IXTH3N100P Price and Stock

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Littelfuse Inc IXTH3N100P MOSFET N-CH 1000V 3A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH3N100P	Tube			300	1 - 10 - 100 - 1000 $2.94063 10000 $2.94063	Buy Now
Newark	IXTH3N100P	Bulk			300	1 - 10 - 100 $4.19 1000 $3.37 10000 $3.13	Buy Now
IXYS Corporation IXTH3N100P MOSFETs 3 Amps 1000V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH3N100P		34			1 $6.3 10 $5.54 100 $4.7 1000 $2.94 10000 $2.94	Buy Now
Future Electronics	IXTH3N100P	Tube			300	1 - 10 - 100 $3.45 1000 $3.29 10000 $3.19	Buy Now
TTI	IXTH3N100P	Tube			300	1 - 10 - 100 - 1000 $2.94 10000 $2.94	Buy Now
TME	IXTH3N100P		240		1	1 $5.1 10 $4.05 100 $3.64 1000 $3.64 10000 $3.64	Buy Now
New Advantage Corporation	IXTH3N100P		116		1	1 - 10 - 100 $7.25 1000 $6.76 10000 $6.76	Buy Now
IXYS Integrated Circuits Division IXTH3N100P MOSFET DIS.3A 1000V N-CH TO-247AD POLAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTH3N100P		116			1 $5.61979 10 $5.61979 100 $5.1089 1000 $5.1089 10000 $5.1089	Buy Now

IXTH3N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH3N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-247		Original	PDF

IXTH3N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXTP3N100P Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100 Text: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P 3-08-A IXTP3N100P IXTA3N100P T3N100 IXTH3N100P 3n100
IXTH3N100P Abstract: IXTA3N100P Text: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	PDF	IXTA3N100P IXTH3N100P IXTP3N100P O-263 O-220 3N100P 3-08-A IXTH3N100P IXTA3N100P
T3N100 Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 Text: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTA3N100P IXTH3N100P IXTP3N100P O-263 3N100P T3N100 IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	PDF	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250