IXTT69N30P Search Results

IXTT69N30P Price and Stock

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Littelfuse Inc IXTT69N30P MOSFET N-CH 300V 69A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT69N30P	Tube			300	1 - 10 - 100 - 1000 $7.07227 10000 $7.07227	Buy Now
Verical	IXTT69N30P		330		1	1 $7.1487 10 $7.1487 100 $7.1487 1000 $7.1487 10000 $7.1487	Buy Now
Newark	IXTT69N30P	Bulk			300	1 - 10 - 100 - 1000 $7.42 10000 $7.42	Buy Now
IXYS Corporation IXTT69N30P MOSFETs 69 Amps 300V 0.049 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT69N30P					1 - 10 - 100 - 1000 $8.86 10000 $8.86	Get Quote
Future Electronics	IXTT69N30P	Tube		24 Weeks	30	1 - 10 - 100 $8.29 1000 $8.29 10000 $8.29	Buy Now
Bristol Electronics	IXTT69N30P		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXTT69N30P		24			1 $14.058 10 $12.496 100 $11.5588 1000 $11.5588 10000 $11.5588	Buy Now
TTI	IXTT69N30P	Tube			300	1 - 10 - 100 - 1000 $7.16 10000 $7.16	Buy Now

New Advantage Corporation	IXTT69N30P		24		1	1 - 10 - 100 $16.14 1000 $16.14 10000 $16.14	Buy Now

IXTT69N30P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTT69N30P		IXYS	Discrete MOSFETs: Standard N-channel Types		Original	PDF

IXTT69N30P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET VDSS ID25 IXTT69N30P IXTQ69N30P RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	IXTT69N30P IXTQ69N30P O-268 100ms 69N30P 0-16-09-A	PDF
s69a Abstract: IXTQ69N30P IXTT69N30P TO-3P Text: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	IXTT69N30P IXTQ69N30P O-268 063in) 100ms 69N30P 0-16-09-A s69a IXTQ69N30P IXTT69N30P TO-3P	PDF
IXTQ69N30 Abstract: IXTQ69N30P IXTT69N30P 7V60 Text: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A ≤ 49 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous	Original	IXTQ69N30P IXTT69N30P O-268 69N30P IXTQ69N30 IXTQ69N30P IXTT69N30P 7V60	PDF
Untitled Abstract: No abstract text available Text: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P	PDF
Untitled Abstract: No abstract text available Text: IXTQ69N30P IXTT69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P	PDF
IXTQ69N30P Abstract: IXTT69N30P Text: IXTT69N30P IXTQ69N30P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 300V = 69A ≤ 49mΩ Ω TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300	Original	IXTT69N30P IXTQ69N30P O-268 063in) 100ms IXTQ69N30P IXTT69N30P 69N30P 0-16-09-A	PDF