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    69N30P Search Results

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    69N30P Price and Stock

    Littelfuse Inc IXFH69N30P

    MOSFET N-CH 300V 69A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH69N30P Tube 368 1
    • 1 $11.34
    • 10 $11.34
    • 100 $7.21633
    • 1000 $11.34
    • 10000 $11.34
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    Newark IXFH69N30P Bulk 300
    • 1 -
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    • 1000 $6.79
    • 10000 $6.79
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    RS IXFH69N30P Bulk 8 Weeks 30
    • 1 -
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    • 100 $10.02
    • 1000 $10.02
    • 10000 $10.02
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    Littelfuse Inc IXTQ69N30P

    MOSFET N-CH 300V 69A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ69N30P Tube 293 1
    • 1 $10.29
    • 10 $10.29
    • 100 $6.50433
    • 1000 $10.29
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    CoreStaff Co Ltd IXTQ69N30P 300
    • 1 $12.143
    • 10 $6.979
    • 100 $6.5
    • 1000 $6.5
    • 10000 $6.5
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    Littelfuse Inc IXTT69N30P

    MOSFET N-CH 300V 69A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT69N30P Tube 300
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    • 1000 $7.07227
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    Newark IXTT69N30P Bulk 300
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    • 1000 $7.42
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    Littelfuse Inc IXFT69N30P

    MOSFET N-CH 300V 69A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT69N30P Tube 300
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    • 1000 $8.04587
    • 10000 $8.04587
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    Newark IXFT69N30P Bulk 300
    • 1 -
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    • 1000 $8.44
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    Littelfuse Inc IXTQ69N30PM

    MOSFET N-CH 300V 25A TO3PFP
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    DigiKey IXTQ69N30PM Tube 300
    • 1 -
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    • 1000 $4.72727
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    Newark IXTQ69N30PM Bulk 300
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    • 1000 $4.96
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    Find more 69N30P price and stock on Findchips.com

    69N30P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 69N30P IXTT 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS Transient ±20


    Original     		69N30P 69N30P O-268 PDF

    DS99220

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFH 69N30P IXFT 69N30P RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		69N30P DS99220 PDF

    69N30P

    Abstract: ixtq69n30p
    Text: IXTQ 69N30P IXTT 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS Transient ±20


    Original     		69N30P O-268 69N30P ixtq69n30p PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXTQ69N30

    Abstract: IXTQ69N30P IXTT69N30P 7V60
    Text: 69N30P 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A ≤ 49 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM Continuous


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P IXTQ69N30 IXTQ69N30P IXTT69N30P 7V60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 69N30P 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    DS99220

    Abstract: IXFH69N30P IXFK69N30P
    Text: PolarHTTM HiPerFET Power MOSFET 69N30P 69N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous


    Original     		IXFH69N30P IXFK69N30P 69N30P DS99220 IXFH69N30P IXFK69N30P PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF

    Untitled

    Abstract: No abstract text available
    Text: 69N30P 69N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 69 A Ω = 49 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		IXTQ69N30P IXTT69N30P O-268 69N30P 69N30P PDF