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    IXFH69N30P Search Results

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    IXFH69N30P Price and Stock

    Littelfuse Inc IXFH69N30P

    MOSFET N-CH 300V 69A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH69N30P Tube 368 1
    • 1 $11.34
    • 10 $11.34
    • 100 $7.21633
    • 1000 $11.34
    • 10000 $11.34
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    Newark IXFH69N30P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.79
    • 10000 $6.79
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    RS IXFH69N30P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $10.02
    • 1000 $10.02
    • 10000 $10.02
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    IXYS Corporation IXFH69N30P

    MOSFETs 69 Amps 300V 0.049 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH69N30P 300
    • 1 $11.16
    • 10 $10.26
    • 100 $7.21
    • 1000 $6.47
    • 10000 $6.47
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    Future Electronics IXFH69N30P Tube 300
    • 1 -
    • 10 -
    • 100 $6.45
    • 1000 $6.35
    • 10000 $6.35
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    TME IXFH69N30P 1
    • 1 $10.87
    • 10 $8.64
    • 100 $7.76
    • 1000 $7.76
    • 10000 $7.76
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    New Advantage Corporation IXFH69N30P 26 1
    • 1 -
    • 10 -
    • 100 $14.78
    • 1000 $14.78
    • 10000 $14.78
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    IXFH69N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH69N30P IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFH69N30P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 300v

    Abstract: IXFH69N30P IXFT69N30P
    Text: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A diode 300v IXFH69N30P IXFT69N30P PDF

    DS99220

    Abstract: IXFH69N30P IXFK69N30P
    Text: PolarHTTM HiPerFET Power MOSFET IXFH69N30P IXFK69N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous


    Original     		IXFH69N30P IXFK69N30P 69N30P DS99220 IXFH69N30P IXFK69N30P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF