smd MARKING r5b
Abstract: R5C MARKING CODE SOT23 k 2101 MOSFET 0402 100N 16V Y5V fdc6420c smd transistor r5c QFN-32 0-10v dimming leds cg100 smd marking code r54
Text: SMB112 Preliminary Information Five-Channel Digitally Programmable White-LED and TFT/LCD Power Manager FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I C 2 • • • • • • • interface and non-volatile memory
|
Original
|
SMB112
smd MARKING r5b
R5C MARKING CODE SOT23
k 2101 MOSFET
0402 100N 16V Y5V
fdc6420c
smd transistor r5c
QFN-32
0-10v dimming leds
cg100
smd marking code r54
|
PDF
|
smd diode r5c
Abstract: smd code marking r2b FDC6420C QFN-32 inverter pwm schematic buck converter MARKING R2D SOT23 smd code r5a k 2101 MOSFET
Text: SMB112 Preliminary Information Five-Channel Digitally Programmable White-LED and TFT/LCD Power Manager FEATURES & APPLICATIONS INTRODUCTION • Digital programming of all major parameters via I C 2 • • • • • • • interface and non-volatile memory
|
Original
|
SMB112
smd diode r5c
smd code marking r2b
FDC6420C
QFN-32
inverter pwm schematic buck converter
MARKING R2D SOT23
smd code r5a
k 2101 MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IPIXYS v DSS Standard Power MOSFET IXTH10P50 IXTH11P50 -500 V -500 V p DS on ^D25 0.90 Q -10 A 0.75 Û -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions V„ss Tj =25°Cto150°C -500 V ^ -500 V V DOB Maximum Ratings
|
OCR Scan
|
IXTH10P50
IXTH11P50
Cto150
10P50
11P50
O-247
|
PDF
|
NX 66 DIODE
Abstract: HIP2100 HIP2101 HIP2101IB HIP2101IR TB379 dmos full bridge 100V
Text: Data Sheet July 2001 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver 1 8 LO VDD LO HIP2101 MLFP TOP VIEW VDD HB 2 7 VSS 16 15 14 13 HO 3 6 LI HS 4 5 HI HB HO Applications 12 11 10 9 1 2 3 4 9025 • Drives N-Channel MOSFET Half Bridge • Space Saving SO8 and Low RC-S Micro Leadframe
|
Original
|
00V/2A
HIP2101
114VDC
1000pF
NX 66 DIODE
HIP2100
HIP2101
HIP2101IB
HIP2101IR
TB379
dmos full bridge 100V
|
PDF
|
HIP2100
Abstract: HIP2101 HIP2101EIB HIP2101EIBZ HIP2101IB HIP2101IBZ IPC-2221
Text: HIP2101 Data Sheet October 21, 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate
|
Original
|
HIP2101
00V/2A
HIP2101
HIP2100
FN9025
HIP2101EIB
HIP2101EIBZ
HIP2101IB
HIP2101IBZ
IPC-2221
|
PDF
|
APT806R5KN
Abstract: No abstract text available
Text: A d v a n ced po w er Te c h n o l o g y APT806R5KN 800V 2.0A 6.50Q POWER MOS IV® N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym b o l VDSS All Ratings: Tc = 25°C unless otherwise specified. P aram eter Drain-Source Voltage
|
OCR Scan
|
APT806R5KN
APT806R5KN
TQ-220AB
|
PDF
|
FN9025
Abstract: HIP2100 HIP2101 HIP2101IB HIP2101IBT HIP2101IBZ HIP2101IBZT HIP2101IR dmos full bridge 100V application note for HIP2101
Text: HIP2101 Data Sheet January 2003 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead MLFP plastic packages. It is equivalent to
|
Original
|
HIP2101
00V/2A
HIP2101
HIP2100
FN9025
HIP2101IB
HIP2101IBT
HIP2101IBZ
HIP2101IBZT
HIP2101IR
dmos full bridge 100V
application note for HIP2101
|
PDF
|
k 2101 MOSFET
Abstract: 2N6789
Text: POWER MOSFET TRANSISTORS IK 200 Volt, 0.80 Ohm N-Channel 2N679° DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching
|
OCR Scan
|
2N679°
2N6789
2N6790
k 2101 MOSFET
|
PDF
|
application note for HIP2101
Abstract: No abstract text available
Text: HIP2101 Data Sheet July 2003 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead QFN plastic packages. It is equivalent to
|
Original
|
HIP2101
FN9025
00V/2A
HIP2101
HIP2100
application note for HIP2101
|
PDF
|
HIP2101
Abstract: HIP2100 HIP2101EIB HIP2101EIBZ HIP2101IB HIP2101IBZ IPC-2221 FN9025
Text: HIP2101 Data Sheet October 21, 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate
|
Original
|
HIP2101
00V/2A
HIP2101
HIP2100
FN9025
HIP2101EIB
HIP2101EIBZ
HIP2101IB
HIP2101IBZ
IPC-2221
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HIP2101 Data Sheet October 21, 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate
|
Original
|
HIP2101
00V/2A
HIP2101
HIP2100
FN9025
|
PDF
|
HIP2100
Abstract: HIP2101 HIP2101EIB HIP2101EIBZ HIP2101IB HIP2101IBZ IPC-2221
Text: HIP2101 Data Sheet July 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate
|
Original
|
HIP2101
00V/2A
HIP2101
HIP2100
HIP2101EIB
HIP2101EIBZ
HIP2101IB
HIP2101IBZ
IPC-2221
|
PDF
|
HIP2100
Abstract: HIP2101 HIP2101EIB HIP2101IB HIP2101IBZ HIP2101IR
Text: HIP2101 Data Sheet April 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead QFN plastic packages. It is equivalent to
|
Original
|
HIP2101
00V/2A
HIP2101
HIP2100
HIP2101EIB
HIP2101IB
HIP2101IBZ
HIP2101IR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HIP2101 Data Sheet March 2004 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead QFN plastic packages. It is equivalent to
|
Original
|
HIP2101
FN9025
00V/2A
HIP2101
HIP2100
|
PDF
|
|
|
2n6789
Abstract: No abstract text available
Text: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability
|
OCR Scan
|
c13M7cit
QG1G54Û
2N6789
2N6790
|
PDF
|
J-STD-005
Abstract: J-STD-006 electronic grade solder alloys J-STD-006 IPC-4101 J-STD-004 solder wire 30 1N4148-1 210F JC22 s4c diode
Text: ENGINEERING PRACTICES STUDY TITLE: Soldering Heat Testing For Semiconductors October 27, 2004 STUDY PROJECT 5961-2911 FINAL REPORT Study Conducted by Alan Barone Prepared by Alan Barone I. OBJECTIVE: The objective of this project was to create guidance on how to
|
Original
|
MIL-STD-202
J-STD-005
J-STD-006 electronic grade solder alloys
J-STD-006
IPC-4101
J-STD-004 solder wire 30
1N4148-1
210F
JC22
s4c diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
|
OCR Scan
|
FSL9110R4
JANSR2N7411
-100V,
MIL-STD-750,
MIL-S-19500,
500ms;
|
PDF
|
2E12
Abstract: FSL110R4 JANSR2N7410
Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 Features Description • 3.5A, 100V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7410
FSL110R4
2E12
FSL110R4
JANSR2N7410
|
PDF
|
SELF vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER
|
OCR Scan
|
MRF134
68-ohm
AN215A
SELF vk200
|
PDF
|
sem 2105
Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
|
Original
|
JANSR2N7411
FSL9110R4
-100V,
sem 2105
2E12
FSL9110R4
JANSR2N7411
IC SEM 2105
sem 2106
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 'f ^BSS JANSR2N7410 Form erly FSL110R4 March1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 3.5A, 100V, r[js ON = 0.600£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
|
OCR Scan
|
FSL110R4
JANSR2N7410
O-205AF
254mm)
|
PDF
|
IC SEM 2105
Abstract: No abstract text available
Text: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s
|
OCR Scan
|
FSL9110R4
-100V,
1-30S2
JANSR2N7411
O-205AF
254mm)
IC SEM 2105
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M IC 5 0 1 2 Dual Power MOSFET Predriver General Description Features The MIC5012 is the dual member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 14-pin MIC5012 is
|
OCR Scan
|
MIC5012
MIC501X
14-pin
MIL-STD-883
|
PDF
|
IC501
Abstract: MIC501
Text: MIC5012 Dual Power MOSFET Predriver G eneral Description Features The MIC5012 is the dual member of the Micrel MIC501X predriver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 14-pin MIC5012 is
|
OCR Scan
|
MIC5012
MIC5012
MIC501X
14-pin
MIC5012for
IC501
MIC501
|
PDF
|
