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Vishay Intertechnologies CRCW0402442KFKED Thick Film Resistors - SMD 1/16watt 442Kohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW0402442KFKED	Reel	1,030,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00303	Buy Now
Molex 0351510214 Headers & Wire Housings PLUG HSG
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TTI	0351510214	Bulk	18,300		50	1 - 10 - 100 $0.169 1000 $0.133 10000 $0.125	Buy Now
Amphenol Corporation 91-578854-19P Circular MIL Spec Connector 19P PLG SZ 15 PIN CBL MNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	91-578854-19P	Each	206		1	1 $100.48 10 $95.69 100 $82.26 1000 $82.26 10000 $82.26	Buy Now
TDK Corporation B57540G0502F000 NTC Thermistors 5k 3497
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TTI	B57540G0502F000	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Corporation B57550G0502F000 NTC Thermistors 5k 3497
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	B57550G0502F000	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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K3497 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
toshiba marking code transistor Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2SK3497 2SJ618 toshiba marking code transistor K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ	PDF
jeita sc-65 Abstract: K3497 2SK3497 2SJ618 SC-65 Text: K3497 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV K3497 ○ 低周波電力増幅用単位: mm VDSS 180 V ゲート・ソース間電圧 VGSS ±12 V 許チ保注 1: 注 2: 容 DC (注 1) ID 10 A パルス	Original	2SK3497 2SJ618 SC-65 2-16C1B 20070701-JA jeita sc-65 K3497 2SK3497 2SJ618 SC-65	PDF
2SK3497 Abstract: k3497 2SJ618 SC-65 K349 Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm 2.0 20.5 ± 0.5 9.0 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±12	Original	2SK3497 2SJ618 2SK3497 k3497 2SJ618 SC-65 K349	PDF
k3497 Abstract: 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349 Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage	Original	2SK3497 2SJ618 k3497 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349	PDF
k3497 Abstract: K349 2SK3497 2SJ618 Toshiba 2SJ Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage	Original	2SK3497 2SJ618 k3497 K349 2SK3497 2SJ618 Toshiba 2SJ	PDF
Toshiba 2SJ Abstract: toshiba marking code transistor Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating	Original	2SK3497 2SJ618 2-16C1B Toshiba 2SJ toshiba marking code transistor	PDF