on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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k3491
Abstract: K349 2SK3491 2SK349
Text: Ordering number : ENN6959 K3491 N-Channel Silicon MOSFET K3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [K3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source
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ENN6959
2SK3491
2083B
2SK3491]
2092B
k3491
K349
2SK3491
2SK349
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3
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2002/95/EC)
2SK3494
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PDF
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K3496
Abstract: K3436 K3498 K3638 K3492 K2746 MK Socket MK Socket outlet K2977 K3431
Text: Part M Product Guide Part M Product Guide An introduction to Part M of the Building Regulations: Part USE OF BUILDINGS. It is estimated that 8.6 million people in the UK a assist with the facilities for people with disabilities, the Office of the Depu Building Regulations 2000 have issued Part M, which covers the ent
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MK166
K3496
K3436
K3498
K3638
K3492
K2746
MK Socket
MK Socket outlet
K2977
K3431
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PDF
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K349
Abstract: 2SK3499
Text: K3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)
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2SK3499
K349
2SK3499
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toshiba marking code transistor
Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ
Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SK3497
2SJ618
toshiba marking code transistor
K3497
2SK3497
toshiba 2-16c1b
2SJ618
Toshiba 2SJ
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jeita sc-65
Abstract: K3497 2SK3497 2SJ618 SC-65
Text: K3497 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3497 ○ 低周波電力増幅用 単位: mm VDSS 180 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±12 V 許 チ 保 注 1: 注 2: 容 DC (注 1) ID 10 A パルス
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2SK3497
2SJ618
SC-65
2-16C1B
20070701-JA
jeita sc-65
K3497
2SK3497
2SJ618
SC-65
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PDF
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K349
Abstract: k3499 2SK3499
Text: K3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: Yfs = 8.0 S (typ.)
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2SK3499
K349
k3499
2SK3499
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching
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2002/95/EC)
2SK3494
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K3498
Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
Text: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
K3498
K3498 Transistor
2SK3498
transistor k3498
k349
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K3498
Abstract: 2SK3498 K3498 Transistor K349
Text: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)
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2SK3498
K3498
2SK3498
K3498 Transistor
K349
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2SK3497
Abstract: k3497 2SJ618 SC-65 K349
Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm 2.0 20.5 ± 0.5 9.0 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±12
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2SK3497
2SJ618
2SK3497
k3497
2SJ618
SC-65
K349
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k3494
Abstract: 2SK3494
Text: Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C
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2SK3494
k3494
2SK3494
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K3498
Abstract: K3498 Transistor
Text: K3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
to150
K3498
K3498 Transistor
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K3498
Abstract: K3498 Transistor 2SK3498
Text: K3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
K3498
K3498 Transistor
2SK3498
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2SK3499
Abstract: K349
Text: K3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)
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2SK3499
2SK3499
K349
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K3498
Abstract: K3498 Transistor transistor k3498 2SK3498 K349
Text: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
K3498
K3498 Transistor
transistor k3498
2SK3498
K349
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PDF
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k3498
Abstract: 2SK3498 K3498 Transistor
Text: K3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
k3498
2SK3498
K3498 Transistor
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PDF
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K3498
Abstract: K3498 Transistor 2SK3498 K349
Text: K3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
K3498
K3498 Transistor
2SK3498
K349
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K349
Abstract: k3494 2SK3494 2SK34
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs K3494 N-channel enhancement mode MOSFET • Features Unit: mm • Low on-resistance, low Qg • High avalanche resistance 4.6±0.2 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3
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2002/95/EC)
2SK3494
O-220C-G1
K3494
K349
k3494
2SK3494
2SK34
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K3498
Abstract: 2SK3498
Text: K3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)
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2SK3498
to150
K3498
2SK3498
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k3497
Abstract: 2SK3497 2SJ618 toshiba marking code transistor toshiba 2-16c1b Toshiba 2SJ K349
Text: K3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage
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2SK3497
2SJ618
k3497
2SK3497
2SJ618
toshiba marking code transistor
toshiba 2-16c1b
Toshiba 2SJ
K349
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PDF
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K349
Abstract: k3491 maxtor
Text: _i_ T h l i d D M in c n t ! • R i b p ro p e rt y eO A rn p h trm l C o r p o r a t o r ! oriti Is d s l l r o d « n g o n d i t e l i th flT H l i n o i t o b * d ls o lo m d i r v p r o f lw o d * r u m L In vtw>la : ln iR^ _1 f o r m D n u fiE + u fH n r i o b b y a n y( a n a i
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OCR Scan
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K3491
SATA-001--
0017-1/J
K349
k3491
maxtor
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PDF
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LV200
Abstract: LC66E408 DC42S 27128 EPROM specification INTEL 27128 42-pin intel 27128 eprom AWP42
Text: Ordering number: EN ¿K3493 CMOS LSI LC66E408 4-bit Microcontroller with Built-in EPROM Preliminary " • ■ v . . OVERVIEW / / / PINOUTS The LC66E408 is a 4-bit microcontroller with a built-in 8 Kbyte EPROM. It is compatible with the LC6640X series mask ROM devices, making it ideal for program
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OCR Scan
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LC66E408
LC66E408
LC6640X
42-pin
48-pin
LV200
DC42S
27128 EPROM specification
INTEL 27128
42-pin intel
27128 eprom
AWP42
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PDF
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