Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K3498 TRANSISTOR Search Results

    K3498 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    K3498 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K3498 Transistor

    Abstract: k3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: ïYfsï = 0.6 S (typ.)


    Original
    2SK3498 K3498 Transistor k3498 PDF

    K3498

    Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 K3498 K3498 Transistor 2SK3498 transistor k3498 k349 PDF

    K3498

    Abstract: 2SK3498 K3498 Transistor K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)


    Original
    2SK3498 K3498 2SK3498 K3498 Transistor K349 PDF

    K3498

    Abstract: 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 to150 K3498 2SK3498 PDF

    K3498

    Abstract: K3498 Transistor transistor k3498 2SK3498 K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 K3498 K3498 Transistor transistor k3498 2SK3498 K349 PDF

    K3498

    Abstract: K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 to150 K3498 K3498 Transistor PDF

    k3498

    Abstract: 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 to150 k3498 2SK3498 PDF

    K3498

    Abstract: K3498 Transistor 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 K3498 K3498 Transistor 2SK3498 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 • High forward transfer admittance: |Yfs| = 0.6 S (typ.) Unit: mm


    Original
    2SK3498 PDF

    k3498

    Abstract: 2SK3498 K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 k3498 2SK3498 K3498 Transistor PDF

    K3498

    Abstract: K3498 Transistor 2SK3498 K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 K3498 K3498 Transistor 2SK3498 K349 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 PDF

    K3498

    Abstract: No abstract text available
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 to150 K3498 PDF