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Toshiba America Electronic Components TK4A60DA(STA4,Q,M) MOSFET N-CH 600V 3.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4A60DA(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	TK4A60DA(STA4,Q,M)		543		1	1 $0.875 10 $0.573 100 $0.521 1000 $0.521 10000 $0.521	Buy Now
Toshiba America Electronic Components TK4A60DAR,S4X(S TK4A60DAR - Power MOSFET (N-ch 500V<VDSS<700V)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	TK4A60DAR,S4X(S		49,300		1	1 $0.4167 10 $0.4167 100 $0.3917 1000 $0.3542 10000 $0.3542	Buy Now
Toshiba America Electronic Components TK4A60DAQM SILICON N CHANNEL MOS TYPE (PI-MOSVII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TK4A60DAQM		1,722			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K4A60DA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K4A60DA Abstract: TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA K4A60DA TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da	PDF
Untitled Abstract: No abstract text available Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA	PDF
K4A60 Abstract: K4A60DA TK4A60DA K4A60D Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA K4A60 K4A60DA TK4A60DA K4A60D	PDF
Untitled Abstract: No abstract text available Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA	PDF
K4A60DA Abstract: TK4A60DA K4A60D K4A60 toshiba tk4a60da Text: K4A60DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60DA ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.2 S (標準)	Original	TK4A60DA SC-67 2-10U1B 20070701-JA K4A60DA TK4A60DA K4A60D K4A60 toshiba tk4a60da	PDF
K4A60DA Abstract: No abstract text available Text: K4A60DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60DA ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.2 S (標準)	Original	TK4A60DA K4A60DA	PDF