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Toshiba America Electronic Components TK4A60D(STA4,Q,M) MOSFET N-CH 600V 4A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4A60D(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	TK4A60D(STA4,Q,M)		97			1 $1.03 10 $0.863 100 $0.652 1000 $0.456 10000 $0.411	Buy Now
Toshiba America Electronic Components TK4A60DB(STA4,Q,M) MOSFET N-CH 600V 3.7A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4A60DB(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK4A60DA(STA4,Q,M) MOSFET N-CH 600V 3.5A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4A60DA(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	TK4A60DA(STA4,Q,M)		543		1	1 $0.875 10 $0.573 100 $0.521 1000 $0.521 10000 $0.521	Buy Now
Toshiba America Electronic Components TK4A60DAR,S4X(S TK4A60DAR - Power MOSFET (N-ch 500V<VDSS<700V)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	TK4A60DAR,S4X(S		49,300		1	1 $0.4167 10 $0.4167 100 $0.3917 1000 $0.3542 10000 $0.3542	Buy Now
Toshiba America Electronic Components TK4A60DB(STA4,X,S) TK4A60DB - TRANSISTOR (SILICON)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	TK4A60DB(STA4,X,S)				1	1 $0.8681 10 $0.8681 100 $0.816 1000 $0.7379 10000 $0.7379	Buy Now

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K4A60D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k4a60db Abstract: K4A60 K4A60D Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	TK4A60DB k4a60db K4A60 K4A60D	PDF
k4a60d Abstract: K4A60 TK4A60D Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)	Original	TK4A60D k4a60d K4A60 TK4A60D	PDF
K4A60 Abstract: No abstract text available Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)	Original	TK4A60D K4A60	PDF
K4A60DA Abstract: TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA K4A60DA TK4A60DA K4A60 TK4A60D K4A60D toshiba tk4a60da	PDF
K4A60D Abstract: K4A60 Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)	Original	TK4A60D K4A60D K4A60	PDF
K4A60DB Abstract: K4A60 TK4A60DB K4A60D Text: K4A60DB 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60DB ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.6 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.2 S (標準)	Original	TK4A60DB K4A60DB K4A60 TK4A60DB K4A60D	PDF
Untitled Abstract: No abstract text available Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA	PDF
K4A60 Abstract: K4A60DA TK4A60DA K4A60D Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA K4A60 K4A60DA TK4A60DA K4A60D	PDF
K4A60D Abstract: TK4A60D K4A60 Text: K4A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.5 S (標準)	Original	TK4A60D SC-67 2-10U1B 20070701-JA K4A60D TK4A60D K4A60	PDF
K4A60D Abstract: No abstract text available Text: K4A60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.5 S (標準)	Original	TK4A60D K4A60D	PDF
Untitled Abstract: No abstract text available Text: K4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.)	Original	TK4A60D	PDF
Untitled Abstract: No abstract text available Text: K4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)	Original	TK4A60DA	PDF
K4A60DA Abstract: TK4A60DA K4A60D K4A60 toshiba tk4a60da Text: K4A60DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60DA ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.2 S (標準)	Original	TK4A60DA SC-67 2-10U1B 20070701-JA K4A60DA TK4A60DA K4A60D K4A60 toshiba tk4a60da	PDF
K4A60DA Abstract: No abstract text available Text: K4A60DA 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60DA ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.2 S (標準)	Original	TK4A60DA K4A60DA	PDF

k4a60db Abstract: No abstract text available Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	TK4A60DB k4a60db	PDF
k4a60db Abstract: No abstract text available Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	TK4A60DB k4a60db	PDF