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Toshiba America Electronic Components TK4A60DB(STA4,Q,M) MOSFET N-CH 600V 3.7A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4A60DB(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK4A60DB(STA4,X,S) TK4A60DB - TRANSISTOR (SILICON)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	TK4A60DB(STA4,X,S)				1	1 $0.8681 10 $0.8681 100 $0.816 1000 $0.7379 10000 $0.7379	Buy Now

K4A60DB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k4a60db Abstract: K4A60 K4A60D Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	TK4A60DB k4a60db K4A60 K4A60D	PDF
K4A60DB Abstract: K4A60 TK4A60DB K4A60D Text: K4A60DB 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A60DB ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.6 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.2 S (標準)	Original	TK4A60DB K4A60DB K4A60 TK4A60DB K4A60D	PDF
K4A60DB Abstract: TK4A60DB K4A60D k4a60 Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	TK4A60DB K4A60DB TK4A60DB K4A60D k4a60	PDF
k4a60db Abstract: No abstract text available Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	TK4A60DB k4a60db	PDF
k4a60db Abstract: No abstract text available Text: K4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A60DB Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω(typ.) High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600V)	Original	TK4A60DB k4a60db	PDF