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    K4F151612D Price and Stock

    Samsung Semiconductor K4F151612D-TC60

    IC,DRAM,FAST PAGE,1MX16,CMOS,TSOP,50PIN,PLASTIC
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    Quest Components K4F151612D-TC60 4
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    Samsung Semiconductor K4F151612DTL60

    1M X 16 BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA K4F151612DTL60 1,360
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    Samsung Electronics Co. Ltd K4F151612D-TL60

    Electronic Component
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    ComSIT USA K4F151612D-TL60 126
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    K4F151612D Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4F151612D Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    K4F151612D-J Samsung Electronics 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Original PDF
    K4F151612D-JC50 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4F151612D-JC60 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4F151612D-JL50 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4F151612D-JL60 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4F151612D-LC60 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151612D-LL50 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151612D-LL60 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151612D-T Samsung Electronics 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Original PDF
    K4F151612D-TC50 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151612D-TC60 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151612D-TL60 Samsung Electronics DRAM Chip: FPM: 2MByte: 3.3V Supply: Commercial: TSOP II: 50-Pin Original PDF

    K4F151612D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4F171611D

    Abstract: K4F171611D-J K4F171612D K4F171612D-J K4F151611D K4F151611D-J K4F151612D K4F151612D-J
    Text: K4F171611D, K4F151611D K4F171612D, K4F151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power


    Original     		PDF K4F171611D, K4F151611D K4F171612D, K4F151612D 16Bit 1Mx16 h1612D 400mil K4F171611D K4F171611D-J K4F171612D K4F171612D-J K4F151611D K4F151611D-J K4F151612D K4F151612D-J

    K4F151611D

    Abstract: K4F151611D-J K4F151612D K4F151612D-J K4F171611D K4F171611D-J K4F171612D K4F171612D-J
    Text: K4F171611D, K4F151611D K4F171612D, K4F151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power


    Original     		PDF K4F171611D, K4F151611D K4F171612D, K4F151612D 16Bit 1Mx16 400mil K4F151611D K4F151611D-J K4F151612D K4F151612D-J K4F171611D K4F171611D-J K4F171612D K4F171612D-J