Untitled
Abstract: No abstract text available
Text: SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ SSM6J23FE TENTATIVE High Current Switching Applications DC-DC Converter Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 160 mΩ (max) (@VGS = -4.0 V)
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SSM6J23FE
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E6327
Abstract: Q67000-S067
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
E6327
Q67000-S067
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ke marking transistor
Abstract: 2SJ168 2SK1062 marking transistor KE marking jyw JYW marking marking ke toshiba
Text: TOSHIBA 2SK1062 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2 S K 1 062 HIGH SPEED SW ITCHING APPLICATIONS Unit in mm A N A L O G SW ITCHING APPLICATIONS + 0.5 2 .5 - 0 .3 INTERFACE APPLICATIONS + 0.25 1 .5 -0 .1 5 Excellent Switching Time : ton = 14ns Typ.
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2SK1062
2SJ168.
SC-59
ke marking transistor
2SJ168
2SK1062
marking transistor KE
marking jyw
JYW marking
marking ke toshiba
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Untitled
Abstract: No abstract text available
Text: MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching SOT-363 H A h R FI KXX Mechanical Data_ TB C 1 • • • • • Case: SOT-363, Molded Plastic
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MMDT4403
OT-363
OT-363,
MIL-STD-202,
DS30110
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IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Text: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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O-236
IC 4093 pin configuration
BRY 56 B
IC 4093
MARKING 30 5Y
SO2894
4392
4392 a ic
BCV27
BFR30
BFR31
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CA3030
Abstract: marking 1AJ MOSFET marking KE CPH3304 CPH6102 AB mosfet marking jb pcp sanyo CG CPH3404 CPH6302 CPH6202
Text: SANYO New Products of CPH3/6 Package Series 1 Power M O S F E T s and Bip Transistors How to name C P H 3/5/6 package products ♦ M o u n t height o f 0.9mm and best suited for small and thin portable equipment ♦A llo w a b le power dissipation o f 1.6W.
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900mrrf
CPH600UGA)
CPH6002
T17D7b
MT990408TR
CA3030
marking 1AJ
MOSFET marking KE
CPH3304
CPH6102 AB
mosfet marking jb pcp
sanyo CG
CPH3404
CPH6302
CPH6202
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance
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2SK1062
2SJ168.
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ke marking transistor
Abstract: marking IAY 2SA1873 2SC4944 2SC494
Text: TOSHIBA 2SA1873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 873 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Small Package (Dual Type) High Voltage and High Current : VCEO= _ 5 0 V , I c = - 150mA (MAX.) High hjpE Excellent hjpg Linearity
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2SA1873
2SC4944
150mA
ke marking transistor
marking IAY
2SA1873
2SC494
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ440-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ440-Y Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • High Breakdown Voltage :V d S S = —180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ. MAXIMUM RATINGS (Ta = 25°C)
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2SJ440-Y
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2SK94
Abstract: No abstract text available
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK94 AUDIO FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • High Voltage V q d o > ~ 5 0 v in m illim eters • High ly fs l ly fsl = 12 mS TYP. -S 06 l_ 0.65 iai5
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2SK94
2SK94
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HN1A01FU
Abstract: le-2-g
Text: TOSHIBA HN1A01 FU TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H N 1 A 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 . 1± 0.1 1.25 ± 0 .1 • Small Package (Dual Type) • High Voltage and High Current : v CE0 = _ 50V, IC= - 150mA (MAX.)
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HN1A01FU
A01FU
150mA
961001EAA2'
HN1A01FU
le-2-g
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ke marking transistor
Abstract: TRANSISTOR rty marking IAY 2SJ338 2SK2162
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gs = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.)
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2SK2162
2SJ338
ke marking transistor
TRANSISTOR rty
marking IAY
2SK2162
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HN3C01F
Abstract: No abstract text available
Text: T O S H IB A HN3C01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C01F TV TUNER, VHF CONVERTER APPLICATION. TV VHF RF AMPLIFIER APPLICATION. Unit in mm • Including Two Devices in SM6 Super Mini Type with 6Leads • Low Reverse Transfer Capacitance : Cre = 0.38pF (Typ.)
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HN3C01F
N3C01F
1400MHz
HN3C01F
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Untitled
Abstract: No abstract text available
Text: 2SA1954 TO SHIBA 2 S A 1 954 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS G ENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current VCE (sat) d )= —15mV (Typ.) @ Iq = —10mA/ Iß = —0.5mA
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2SA1954
--15mV
--10mA/
500mA
1001EA
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2SK1875
Abstract: No abstract text available
Text: TOSHIBA 2SK1875 T O SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 875 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS 2.1 ± 0.1 A M HIGH FREQUENCY AMPLIFIER APPLICATIONS 1.25 ±0.1 3- A U D IO FREQUENCY AMPLIFIER APPLICATIONS •
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2SK1875
2SK1875
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TRANSISTOR MARKING TE US6
Abstract: No abstract text available
Text: TOSHIBA RN1970,RN1971 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1970, RN1971 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ± 0 .1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ± 0 .1 “ — ;- 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)
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RN1970
RN1971
RN1970,
RN2970
RN2971
RN1971
TRANSISTOR MARKING TE US6
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2SA1586
Abstract: marking IAY 2SC4116 A1586 transistor marking bh ra
Text: TOSHIBA 2SA1586 2 S A 1 586 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High current : v CE0 = _ 50V, IC = - 150mA (Max.) Excellent hEE Linearity : hpE dC = -0.1mA) / hFE (Ic = -2m A) = 0.95 (Typ.)
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2SA1586
150mA
2SC4116
2SA1586
marking IAY
A1586
transistor marking bh ra
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ke marking transistor
Abstract: No abstract text available
Text: T O SH IB A 2SK3051 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2 S K3 0 51 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm
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2SK3051
O-220FL
100/wA
961001EA
ke marking transistor
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2Sj201
Abstract: 2SK1530
Text: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SK1530
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2SJ201
-200V
2SK1530
2Sj201
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN1968, RN 1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT . ± 2 1 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)
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RN1967-RN1969
RN1967,
RN1968,
RN1967
RN1968
RN1969
RN1967-RN
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Untitled
Abstract: No abstract text available
Text: T O SH IB A RN2107-RN2109 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107, RN2108, RN2109 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • W ith Built-in Bias Resistors • Simplify Circuit Design •
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RN2107-RN2109
RN2107,
RN2108,
RN2109
RN1107
RN1109
RN2107
RN2108
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2SC5111
Abstract: No abstract text available
Text: 2SC5111 TOSHIBA 2 S C 5 1 11 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm r0.8 .0.1-i ± M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5111
2SC5111
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BD123
Abstract: HN2C01FU
Text: TO SHIBA HN2C01FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN2C01FU Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 .1 ± 0.1 • Small Package (Dual Type) • High Voltage and High Current : VCEO —50V, I q = 150mA (MAX.)
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HN2C01FU
150mA
961001EAA2'
BD123
HN2C01FU
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2SC5110
Abstract: IC IL 1117
Text: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5110
SC-70
2SC5110
IC IL 1117
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