KM23C32000G Search Results

KM23C32000G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PRELIMINARY KM23C32000G CMOS MASK ROM 32M-Bit 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption	OCR Scan	PDF	KM23C32000G 32M-Bit 150ns 100fiA 44-pin, KM23C32000G KM23C32000G)
Untitled Abstract: No abstract text available Text: KM23C32000G CMOS MASK ROM 32M-BH 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5 V • Current consumption	OCR Scan	PDF	KM23C32000G 32M-BH 150ns KM23C32000G 152x16 easy150 KM23C32000G)
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D • 7Rb4142 0017112 THS KM23C32000G CMOS MASK ROM 32M-BH 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.)	OCR Scan	PDF	7Rb4142 KM23C32000G 32M-BH 150ns 44-pin, KM23C32000G 7Tb4142 DD1711S KM23C32000G)
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	PDF	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	PDF	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
23c3200 Abstract: No abstract text available Text: PRELIMINARY KM 23C3200C^^ CMOS MASK ROM 32M-Bit 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 X 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V	OCR Scan	PDF	23C3200C^ 32M-Bit 150ns 100/iA 44-pin, KM23C32000G KM23C32000G) 23c3200
44SOP Abstract: 2MX16 1MX16 Text: M E M O R Y IC s FUNCTION G UIDE 2.6 MASK ROM Continued Capacity Part Number Orgnization Speedfns) Tech. 2MX 8/ 150/200/250 CMOS 2Mx8/ 1M X 16 120/150/200 CMOS * KM23C16005A(G) 2Mx8/ 120/150/200 CMOS (tltt?50) t KM23V16000A(G) 1Mx16 2Mx8/ 1Mx16 KM23C16000(G)	OCR Scan	PDF	KM23C16000 KM23C16000A KM23C16005A KM23V16000A 1Mx16 2Mx16 2Mx16 44SOP
KMCJ532512 Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7	OCR Scan	PDF	KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL