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Untitled Abstract: No abstract text available Text: SAJ1SUNG ELECTRONICS INC b7E ]> • V^bNlMS DOISOTI bTb ■ S flG K KMM591020BN DRAM MODULES 1Mx9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591020BN. is a 1M b itsx9 Dynamic RAM high density memory module. The Samsung KMM591020BN	OCR Scan	KMM591020BN KMM591020BN. KM44C1000BLJ-1Mx4) 20-pin KM41C1000CLJ1Mx1) 30-pin 22/xF KMM591020BN-6	PDF
1000CLP Abstract: No abstract text available Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications	OCR Scan	KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 KM41C1000CL-7 KM41inued) 20-LEAD 1000CLP	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its	OCR Scan	KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns GD1S412	PDF
KM41C1000CLP Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor Text: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its	OCR Scan	KM41C1000CL KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 200fiA cycle/64ms 256Kx4 KM41C1000CLP KM41C1000CLJ DRAM 18DIP Scans-001144 samsung hv capacitor	PDF
PE 8001A Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001 Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1	OCR Scan	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001	PDF
KM424C256Z Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100	OCR Scan	KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ	PDF
Untitled Abstract: No abstract text available Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The S am sung KM41C1000CL is a CMOS high speed 1,048,576x1 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high perform ance ap p lica tio n s	OCR Scan	KM41C1000CL KM41C1000CL 576x1 KM41C1000CL-6 110ns KM41C1000CL-7 130ns KM41C1000CL-8 150ns 20-LEAD	PDF
KMM591000AN Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC	OCR Scan	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble	PDF
KM41C1000CL-6 Abstract: 41C1000 1mx1 DRAM Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications	OCR Scan	KM41C1000CL KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 110ns 130ns 150ns KM41C1000CL 576x1 41C1000 1mx1 DRAM	PDF