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KM41C4000BJ7 Abstract: KM41C4000BJ6 KM41C4000BJ km41c4000B KM41C4000BJ-6 Text: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAc tRC KM41C4000B-6 60ns 15ns 110ns KM41C4000B-7 70ns 20ns 130ns KM41C4000B-8 80ns 20ns	OCR Scan	PDF	KM41C4000B KM41C4000B-6 KM41C4000B-7 KM41C4000B-8 110ns 130ns 150ns KM41C4000B KM41C4000BJ7 KM41C4000BJ6 KM41C4000BJ KM41C4000BJ-6
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de	OCR Scan	PDF	KM41C4000B KM41C4000B 110ns KM41C4000B-7 130ns KM41C4000B-8 150ns KM41C4000B-6 SN54BCT8373A i1bl723
km41c4000bj7 Abstract: KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8 Text: KM41C4000B CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de sign is optimized for high performance applications	OCR Scan	PDF	KM41C4000B KM41C4000B 110ns KM41C4000B-7 130ns KM41C4000B-8 150ns KM41C4000B-6 20-LEAD km41c4000bj7 KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung	OCR Scan	PDF	DD147b3 KMM594100N KMM594100N KM44C4100J 20-pin KM41C4000BJ 30-pin KMM5364100N-6
TCA 720 Abstract: m59400 KM41C4000BJ Text: KMM594000B DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc *RC KMM594000B-6 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns KMM594000B-8 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability	OCR Scan	PDF	KMM594000B KMM594000B-6 KMM594000B-7 KMM594000B-8 110ns 130ns 150ns KMM594000B KM41C4000BJ TCA 720 m59400
KM41C4000BJ Abstract: 256k x 4 KM44C256CJ km44c256cp Text: MEMORY ICs FUNCTION GUIDE Dynam ic RAM Continued -Capacity 1 M b it 4 M b it - Part Number Organization KM41C1002CVR KM41C1002CT 1M x1 1M x 1 KM41C1002CTR 1M x1 Speed(ns) Technology Features Packages Remark ' 60/70/80 CMOS Static Column	OCR Scan	PDF	KM41C1002CVR KM41C1002CT KM41C1002CTR KM44C256CP KM44C256CJ KM44C256CZ KM44C256CV KM44C256CVR KM44C256CT KM44C256CTR KM41C4000BJ 256k x 4
PE 8001A Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001 Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1	OCR Scan	PDF	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001
KM424C256Z Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100	OCR Scan	PDF	KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
KM41C4000BJ Abstract: KMM594000B-6 KMM594000B KMM594000B-7 KMM594000B-8 30-pin simm memory 30-pin simm memory dynamic 4Mx9 DRAM 30-pin SIMM Text: S A N S U N G E L E C T R O N I C S INC b 7 E T> • 7 T b m M 5 GDlSlDb KMM594000B T H 7 ■ SriGK DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc I rc 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns	OCR Scan	PDF	KMM594000B KMM594000B-6 110ns KMM594000B-7 130ns KMM594000B-8 150ns cycles/16ms KM41C4000BJ 30-pin simm memory 30-pin simm memory dynamic 4Mx9 DRAM 30-pin SIMM
Untitled Abstract: No abstract text available Text: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung	OCR Scan	PDF	KMM584000B KMM584000B KM41C4000BJ 20-pin 30-pin 22/iF KMM584000B-6 110ns M584000B-7
KMM591000AN Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC	OCR Scan	PDF	KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
uras 4 Abstract: km41c4000bj7 Text: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C4000B is a high speed CMOS 4,194,304 x 1 D ynam ic Random A ccess M emory. Its de sig n is op tim ize d fo r high pe rform ance a p p lica tio n s	OCR Scan	PDF	KM41C4000B KM41C4000B 20-LEAD uras 4 km41c4000bj7