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    KM41C4000BJ7

    Abstract: KM41C4000BJ6 KM41C4000BJ km41c4000B KM41C4000BJ-6
    Text: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAc tRC KM41C4000B-6 60ns 15ns 110ns KM41C4000B-7 70ns 20ns 130ns KM41C4000B-8 80ns 20ns


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    PDF KM41C4000B KM41C4000B-6 KM41C4000B-7 KM41C4000B-8 110ns 130ns 150ns KM41C4000B KM41C4000BJ7 KM41C4000BJ6 KM41C4000BJ KM41C4000BJ-6

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    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­


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    PDF KM41C4000B KM41C4000B 110ns KM41C4000B-7 130ns KM41C4000B-8 150ns KM41C4000B-6 SN54BCT8373A i1bl723

    km41c4000bj7

    Abstract: KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8
    Text: KM41C4000B CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


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    PDF KM41C4000B KM41C4000B 110ns KM41C4000B-7 130ns KM41C4000B-8 150ns KM41C4000B-6 20-LEAD km41c4000bj7 KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8

    uras 4

    Abstract: km41c4000bj7
    Text: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C4000B is a high speed CMOS 4,194,304 x 1 D ynam ic Random A ccess M emory. Its de­ sig n is op tim ize d fo r high pe rform ance a p p lica tio n s


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    PDF KM41C4000B KM41C4000B 20-LEAD uras 4 km41c4000bj7