KM44C1003C
Abstract: km44c1003cj 71411-4
Text: KM44C1003C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit Fast Page M ode Q uad C A S C M O S DRAM s. Fast P age M ode offers high s p e e d random access of m em ory ce lls w ithin the sam e row. A cce ss tim e -5 , -6, -7 o r -8 , p o w e r
|
OCR Scan
|
PDF
|
KM44C1003C
KM44C1003C
km44c1003cj
71411-4
|
KM44C1003c
Abstract: No abstract text available
Text: KM44C1003C CMOS DRAM 1 Mx 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power
|
OCR Scan
|
PDF
|
KM44C1003C
KM44C1003c
|
tb41
Abstract: No abstract text available
Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The
|
OCR Scan
|
PDF
|
KMM5362203AW/AWG
KMM5362203AW/AWG
2Mx36
1Mx16
KMM5362203AW
KMM5362203AW
cycles/16
5362203AW
tb41
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C125AJ KMM372C125AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372C125A is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C125A consists of four CMOS
|
OCR Scan
|
PDF
|
KMM372C125AJ
KMM372C125AJ
2Mx72
KMM372C125A
1Mx16bit
400mil
300mil
|
km44c1003cj
Abstract: No abstract text available
Text: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS
|
OCR Scan
|
PDF
|
KMM5361203AW/AWG
KMM5361203AW/AWG
1Mx36
1Mx16
KMM5361203AW
42-pin
24-pin
72-pin
KMM5361233AW
km44c1003cj
|
Untitled
Abstract: No abstract text available
Text: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The
|
OCR Scan
|
PDF
|
KMM5362203BW/BWG
KMM5362203BW/BWG
2Mx36
1Mx16
KMM5362203BW
42-pin
24-pin
72-pin
|
Untitled
Abstract: No abstract text available
Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The
|
OCR Scan
|
PDF
|
KMM5361203BW/BWG
KMM5361203BW/BWG
1Mx36
1Mx16
5361203BW
KMM5361203BW
cycles/16m
KMM5361203BW
|
km44c1003cj
Abstract: No abstract text available
Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN E R A L D ESCRIPTIO N The Samsung KMM5361203BW is a 1M bit x 36 Dynamic RAM high density memory module. The FEATURES
|
OCR Scan
|
PDF
|
KMM5361203BW/BWG
KMM5361203BW/BWG
1Mx36
1Mx16
KMM5361203BW
42-pin
24-pin
72-pin
km44c1003cj
|
KM48C2100AJ
Abstract: No abstract text available
Text: DRAM MODULE y 8 Mega Byte KMM5362209AU/AUG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 2Mx8 B/W DRAM and 1Mx4 Quad CAS DRAM with AND Gate GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung K M M 5362209AU is a 2M bit x 36 Dynam ic RAM high de nsity m em ory module. The
|
OCR Scan
|
PDF
|
KMM5362209AU/AUG
2Mx36
5362209AU
362209A
24-pin
16-pin
72-pin
KM48C2100AJ,
KM44C1003CJ
KM48C2100AJ
|
c1003c
Abstract: No abstract text available
Text: KM44C1003C CMOS DRAM 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power
|
OCR Scan
|
PDF
|
KM44C1003C
c1003c
|
ODQ35
Abstract: KM44C1003CJ
Text: Preliminary KMM5362203BW/BWG DRAM MODULE KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS
|
OCR Scan
|
PDF
|
KMM5362203BW/BWG
KMM5362203BW/BWG
2Mx36
1Mx16
KMM5362203BW
42-pin
24-pin
72-pin
ODQ35
KM44C1003CJ
|
KM44C1003CJ
Abstract: No abstract text available
Text: KMM5361203AW/AWG DRAM MODULE KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The • Part Identification
|
OCR Scan
|
PDF
|
KMM5361203AW/AWG
KMM5361203AW/AWG
1Mx36
1Mx16
KMM5361203AW
KMM5361203AW
cycles/16
42-pin
KM44C1003CJ
|
Untitled
Abstract: No abstract text available
Text: 4 Mega Byte DRAM MODULE KMM5361003C/CG Fast Page Moa» 1Mx36 Quad CAS DRAM SIMM Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5361003C is a 1M bit x 36 Dynamic RAM high density memory mod' e using Parity with 4M Quad CAS DRAM. The Samsung
|
OCR Scan
|
PDF
|
KMM5361003C/CG
1Mx36
KMM5361003C
20-pin
24-pin
72-pin
KMW5361003C
KMM5361003C
|
TR BC
Abstract: No abstract text available
Text: DRAM MODULE KMM372C225AJ KMM372C225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372C225A is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C225A consists of eight CMOS
|
OCR Scan
|
PDF
|
KMM372C225AJ
2Mx72
KMM372C225AJ
KMM372C225A
1Mx16bit
400mil
300mil
48pin
168-pin
TR BC
|
|
Untitled
Abstract: No abstract text available
Text: KM44C1003C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power
|
OCR Scan
|
PDF
|
KM44C1003C
|
km44c1003cj
Abstract: km44c1000cj KMM5362003C kmm5362003 EA51
Text: DRAM MODULE_ j _ 8 Mega Byte KMM5362003C/CG Fast Page Mo^e 2Mx36 Quad CAS DRAM SIMM \} Using Quad CAS DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362003C is a 2M bit x 36 Dynamic RAM high density memory module using • Performance Range:
|
OCR Scan
|
PDF
|
KMM5362003C/CG
2Mx36
KMM5362003C
20-pin
24-pin
72-pin
km44c1003cj
km44c1000cj
kmm5362003
EA51
|
KM44C1000CJ
Abstract: No abstract text available
Text: DRAM MODULE KMM372C122CJ/CT KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS
|
OCR Scan
|
PDF
|
KMM372C122CJ/CT
1Mx72
KMM372C122CJ/CT
KMM372C122C
300mil
48pin
168-pin
KMM372C122C-5
KM44C1000CJ
|
KM416C1200AJ
Abstract: km44c1003cj kmm5361203aw
Text: DRAM MODULE 4 Mega Byte KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The
|
OCR Scan
|
PDF
|
KMM5361203AW/AWG
1Mx36
1Mx16
KMM5361203AW
42-pin
24-pin
72-pin
KM416C1200AJ
km44c1003cj
|